Yu; Jick

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yu; Jick.The latest application filed is for "integration of ald tantalum nitride for copper metallization".

Company Profile

0.9.15

Yu; Jick - San Jose CA
Yu; Jick - Beaverton OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum Grant 8,557,094 - Tang , et al. October 15, 2	2013-10-15
Integration of ALD tantalum nitride for copper metallization Grant 8,324,095 - Chung , et al. December 4, 2	2012-12-04
Remote plasma pre-clean with low hydrogen pressure Grant 7,704,887 - Fu , et al. April 27, 2	2010-04-27
Integration Of Ald Tantalum Nitride For Copper Metallization App 20100075494 - Chung; Hua ; et al.	2010-03-25
Apparatus for integration of barrier layer and seed layer Grant 7,494,908 - Chung , et al. February 24, 2	2009-02-24
Resputtered Copper Seed Layer App 20080190760 - TANG; XIANMIN ; et al.	2008-08-14
Sputtering Chamber Having Auxiliary Backside Magnet to Improve Etch Uniformity and Magnetron Producing Sustained Self Sputtering of Ruthenium and Tantalum App 20080083610 - Tang; Xianmin ; et al.	2008-04-10
Integration of barrier layer and seed layer Grant 7,352,048 - Chung , et al. April 1, 2	2008-04-01
Apparatus For Integration Of Barrier Layer And Seed Layer App 20070283886 - CHUNG; HUA ; et al.	2007-12-13
Etch and sidewall selectivity in plasma sputtering App 20070209925 - Tang; Xianmin ; et al.	2007-09-13
Remote plasma pre-clean with low hydrogen pressure App 20070117397 - Fu; Xinyu ; et al.	2007-05-24
Simultaneous ion milling and sputter deposition App 20070051622 - Tang; Xianmin ; et al.	2007-03-08
Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof App 20060251872 - Wang; Jenn Yue ; et al.	2006-11-09
Integration of ALD tantalum nitride for copper metallization App 20060148253 - Chung; Hua ; et al.	2006-07-06
Integration of ALD tantalum nitride for copper metallization Grant 7,049,226 - Chung , et al. May 23, 2	2006-05-23
Integration of barrier layer and seed layer Grant 6,936,906 - Chung , et al. August 30, 2	2005-08-30
Integration of barrier layer and seed layer App 20050139948 - Chung, Hua ; et al.	2005-06-30
Integration of ALD tantalum nitride for copper metallization App 20050106865 - Chung, Hua ; et al.	2005-05-19
Oblique ion milling of via metallization App 20040222082 - Gopalraja, Praburam ; et al.	2004-11-11
Metal to ILD adhesion improvement by reactive sputtering Grant 6,746,727 - Yu , et al. June 8, 2	2004-06-08
Integration of barrier layer and seed layer App 20030057526 - Chung, Hua ; et al.	2003-03-27
Integration of barrier layer and seed layer App 20030059538 - Chung, Hua ; et al.	2003-03-27
Integration of barrier layer and seed layer App 20030057527 - Chung, Hua ; et al.	2003-03-27

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