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Patent applications and USPTO patent grants for Yu; Hong Yu.The latest application filed is for "dual work function device with stressor layer and method for manufacturing the same".
Patent | Date |
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Dual Work Function Device With Stressor Layer And Method For Manufacturing The Same App 20090174003 - Chang; Shou-Zen ;   et al. | 2009-07-09 |
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof Grant 7,514,360 - Yu , et al. April 7, 2 | 2009-04-07 |
Methods for manufacturing a CMOS device with dual dielectric layers App 20080191286 - Chang; Shou-Zen ;   et al. | 2008-08-14 |
Semiconductor Devices App 20070267762 - Yu; Hong Yu ;   et al. | 2007-11-22 |
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof App 20050205947 - Yu, Hong Yu ;   et al. | 2005-09-22 |
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