| Patent | Date |
|---|
Techniques For Mram Mtj Top Electrode Connection
App 20220246843 - Chuang; Harry-Hak-Lay ; et al. | 2022-08-04 |
Mram Memory Cell Layout For Minimizing Bitcell Area
App 20220123051 - CHUANG; Harry-Hak-Lay ; et al. | 2022-04-21 |
MRAM memory cell layout for minimizing bitcell area
Grant 11,244,983 - Chuang , et al. February 8, 2 | 2022-02-08 |
Techniques For Mram Mtj Top Electrode Connection
App 20210351345 - Chuang; Harry-Hak-Lay ; et al. | 2021-11-11 |
Techniques for MRAM MTJ top electrode connection
Grant 11,075,335 - Chuang , et al. July 27, 2 | 2021-07-27 |
Manufacturing Techniques And Corresponding Devices For Magnetic Tunnel Junction Devices
App 20210184110 - Chuang; Harry-Hak-Lay ; et al. | 2021-06-17 |
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
Grant 10,937,957 - Chuang , et al. March 2, 2 | 2021-03-02 |
Mram Memory Cell Layout For Minimizing Bitcell Area
App 20200411590 - CHUANG; Harry-Hak-Lay ; et al. | 2020-12-31 |
One-time-programmable (OTP) implementation using magnetic junctions
Grant 10,878,928 - Chuang , et al. December 29, 2 | 2020-12-29 |
Resistance variable memory structure and method of forming the same
Grant 10,868,250 - Tu , et al. December 15, 2 | 2020-12-15 |
Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage device
Grant 10,868,234 - Chuang , et al. December 15, 2 | 2020-12-15 |
Top electrode for device structures in interconnect
Grant 10,862,029 - Chen , et al. December 8, 2 | 2020-12-08 |
Rram Cell Structure With Laterally Offset Beva/teva
App 20200335694 - Chang; Chih-Yang ; et al. | 2020-10-22 |
RRAM cell structure with laterally offset BEVA/TEVA
Grant 10,700,275 - Chang , et al. | 2020-06-30 |
Storage Device Having Magnetic Tunnel Junction Cells Of Different Sizes, And Method Of Forming Storage Device
App 20200194662 - CHUANG; HARRY-HAK-LAY ; et al. | 2020-06-18 |
Techniques For Mram Mtj Top Electrode Connection
App 20200098982 - Chuang; Harry-Hak-Lay ; et al. | 2020-03-26 |
Top Electrode For Device Structures In Interconnect
App 20200098983 - Chen; Hsia-Wei ; et al. | 2020-03-26 |
One-time-programmable (otp) Implementation Using Magnetic Junctions
App 20200098440 - Chuang; Harry-Hak-Lay ; et al. | 2020-03-26 |
Manufacturing Techniques And Corresponding Devices For Magnetic Tunnel Junction Devices
App 20200028072 - Chuang; Harry-Hak-Lay ; et al. | 2020-01-23 |
Top electrode for device structures in interconnect
Grant 10,510,953 - Chen , et al. Dec | 2019-12-17 |
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
Grant 10,497,861 - Chuang , et al. De | 2019-12-03 |
Resistance Variable Memory Structure and Method of Forming the Same
App 20190259944 - Tu; Kuo-Chi ; et al. | 2019-08-22 |
Resistance variable memory structure and method of forming the same
Grant 10,388,868 - Tu , et al. A | 2019-08-20 |
Top Electrode For Device Structures In Interconnect
App 20190229265 - Chen; Hsia-Wei ; et al. | 2019-07-25 |
Top electrode for device structures in interconnect
Grant 10,276,790 - Chen , et al. | 2019-04-30 |
Rram Cell Structure With Laterally Offset Beva/teva
App 20190123271 - Chang; Chih-Yang ; et al. | 2019-04-25 |
RRAM cell structure with laterally offset BEVA/TEVA
Grant 10,199,575 - Chang , et al. Fe | 2019-02-05 |
Structure and formation method of integrated circuit structure
Grant 10,134,807 - Chuang , et al. November 20, 2 | 2018-11-20 |
Determining a characteristic of a monitored layer on an integrated chip
Grant 10,043,970 - Chuang , et al. August 7, 2 | 2018-08-07 |
Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
Grant 10,008,662 - You , et al. June 26, 2 | 2018-06-26 |
Determining A Characteristic Of A Monitored Layer On An Integrated Chip
App 20180175288 - Chuang; Harry-Hak-Lay ; et al. | 2018-06-21 |
Structure And Formation Method Of Integrated Circuit Structure
App 20180166501 - CHUANG; Harry-Hak-Lay ; et al. | 2018-06-14 |
Dummy bottom electrode in interconnect to reduce CMP dishing
Grant 9,985,075 - Chuang , et al. May 29, 2 | 2018-05-29 |
Top Electrode For Device Structures In Interconnect
App 20180019390 - Chen; Hsia-Wei ; et al. | 2018-01-18 |
Top electrode for device structures in interconnect
Grant 9,780,302 - Chen , et al. October 3, 2 | 2017-10-03 |
Manufacturing Techniques And Corresponding Devices For Magnetic Tunnel Junction Devices
App 20170256704 - Chuang; Harry-Hak-Lay ; et al. | 2017-09-07 |
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
Grant 9,666,790 - Chuang , et al. May 30, 2 | 2017-05-30 |
Rram Cell Structure With Laterally Offset Beva/teva
App 20170141301 - Chang; Chih-Yang ; et al. | 2017-05-18 |
Dummy Bottom Electrode In Interconnect To Reduce Cmp Dishing
App 20170053967 - Chuang; Harry-Hak-Lay ; et al. | 2017-02-23 |
Manufacturing Techniques And Corresponding Devices For Magnetic Tunnel Junction Devices
App 20170018704 - Chuang; Harry-Hak-Lay ; et al. | 2017-01-19 |
Top Electrode For Device Structures In Interconnect
App 20160380193 - Chen; Hsia-Wei ; et al. | 2016-12-29 |
Dummy bottom electrode in interconnect to reduce CMP dishing
Grant 9,502,466 - Chuang , et al. November 22, 2 | 2016-11-22 |
Perpendicular Magnetic Tunneling Junction (mtj) For Improved Magnetoresistive Random-access Memory (mram) Process
App 20160268499 - You; Wen-Chun ; et al. | 2016-09-15 |
Resistance Variable Memory Structure and Method of Forming the Same
App 20160268507 - Tu; Kuo-Chi ; et al. | 2016-09-15 |
Top electrode for device structures in interconnect
Grant 9,444,045 - Chen , et al. September 13, 2 | 2016-09-13 |
RRAM cell structure with laterally offset BEVA/TEVA
Grant 9,425,392 - Chang , et al. August 23, 2 | 2016-08-23 |
Resistance variable memory structure and method of forming the same
Grant 9,349,953 - Tu , et al. May 24, 2 | 2016-05-24 |
Top Electrode For Device Structures In Interconnect
App 20160035975 - Chen; Hsia-Wei ; et al. | 2016-02-04 |
Rram Cell Structure With Laterally Offset Beva/teva
App 20150325786 - Chang; Chih-Yang ; et al. | 2015-11-12 |
Top electrode blocking layer for RRAM device
Grant 9,172,036 - Chen , et al. October 27, 2 | 2015-10-27 |
RRAM cell structure with laterally offset BEVA/TEVA
Grant 9,112,148 - Chang , et al. August 18, 2 | 2015-08-18 |
Memory cells breakdown protection
Grant 9,076,522 - You , et al. July 7, 2 | 2015-07-07 |
Top Electrode Blocking Layer for RRAM Device
App 20150144859 - Chen; Hsia-Wei ; et al. | 2015-05-28 |
Memory Cells Breakdown Protection
App 20150092471 - YOU; Wen-Chun ; et al. | 2015-04-02 |
Rram Cell Structure With Laterally Offset Beva/teva
App 20150090949 - Chang; Chih-Yang ; et al. | 2015-04-02 |
Resistive Random Access Memory And Manufacturing Method Thereof
App 20150069315 - SHIH; SHENG-HUNG ; et al. | 2015-03-12 |
Resistance Variable Memory Structure And Method Of Forming The Same
App 20140264233 - TU; Kuo-Chi ; et al. | 2014-09-18 |
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