Yoshikawa; Kuniyoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yoshikawa; Kuniyoshi.The latest application filed is for "method for manufacturing semiconductor memory".

Company Profile

0.12.1

Yoshikawa; Kuniyoshi - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for manufacturing semiconductor memory Grant 6,632,714 - Yoshikawa October 14, 2	2003-10-14
Method For Manufacturing Semiconductor Memory App 20030034518 - Yoshikawa, Kuniyoshi	2003-02-20
Semiconductor Memory Grant 6,335,554 - Yoshikawa January 1, 2	2002-01-01
Method for manufacturing contact hole for a nonvolatile semiconductor device Grant 5,679,590 - Mori , et al. October 21, 1	1997-10-21
Semiconductor device having a multi-layer channel structure Grant 5,586,073 - Hiura , et al. December 17, 1	1996-12-17
Memory transistor having increased interelectrode capacitance Grant 5,378,910 - Yoshikawa January 3, 1	1995-01-03
Non-volatile semiconductor memory having improved erasure characteristics Grant 5,365,098 - Miyamoto , et al. November 15, 1	1994-11-15
Nonvolatile semiconductor device Grant 5,304,829 - Mori , et al. April 19, 1	1994-04-19
Semiconductor device having a gate electrode consisting of a plurality of layers Grant 5,053,840 - Yoshikawa October 1, 1	1991-10-01
Method of manufacturing a nonvolatile semiconductor device Grant 5,015,601 - Yoshikawa May 14, 1	1991-05-14
Non-volatile semiconductor memory device and method of the manufacture thereof Grant 4,929,988 - Yoshikawa May 29, 1	1990-05-29
Method of manufacturing a semiconductor device Grant 4,925,807 - Yoshikawa May 15, 1	1990-05-15
Semiconductor device Grant 4,881,108 - Yoshikawa November 14, 1	1989-11-14

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