Yoshida; Seikoh
Patent Applications and Registrations
Patent applications and USPTO patent grants for Yoshida; Seikoh.The latest application filed is for "gan-based semiconductor element".
Company Profile
0.27.30
- Yoshida; Seikoh - Tokyo JP
- Yoshida; Seikoh - Chiyoda-ku JP
- Yoshida, Seikoh - Toride-shi JP
Patent Activity
| Patent | Date |
|---|---|
| Field effect transistor having semiconductor operating layer formed with an inclined side wall Grant 9,048,302 - Sato , et al. June 2, 2 | 2015-06-02 |
| GaN-based semiconductor element Grant 8,729,603 - Ikeda , et al. May 20, 2 | 2014-05-20 |
| Semiconductor device Grant 8,525,225 - Kambayashi , et al. September 3, 2 | 2013-09-03 |
| Field effect transistor having MOS structure made of nitride compound semiconductor Grant 8,421,182 - Nomura , et al. April 16, 2 | 2013-04-16 |
| Field effect transistor and method of manufacturing the same Grant 8,350,293 - Chow , et al. January 8, 2 | 2013-01-08 |
| GaN-based semiconductor device and method of manufacturing the same Grant 8,304,809 - Kaya , et al. November 6, 2 | 2012-11-06 |
| GaN-BASED SEMICONDUCTOR ELEMENT App 20120193639 - IKEDA; Nariaki ; et al. | 2012-08-02 |
| GaN semiconductor device having a high withstand voltage Grant 8,183,597 - Ikeda , et al. May 22, 2 | 2012-05-22 |
| GaN-based semiconductor element Grant 8,178,898 - Ikeda , et al. May 15, 2 | 2012-05-15 |
| Semiconductor device Grant 8,134,181 - Sato , et al. March 13, 2 | 2012-03-13 |
| Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor Grant 8,093,626 - Niiyama , et al. January 10, 2 | 2012-01-10 |
| Field effect transistor Grant 8,072,002 - Niyama , et al. December 6, 2 | 2011-12-06 |
| Method of producing field effect transistor Grant 7,998,848 - Niiyama , et al. August 16, 2 | 2011-08-16 |
| Process for producing semiconductor device using optical absorption layer Grant 7,855,155 - Niiyama , et al. December 21, 2 | 2010-12-21 |
| Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor App 20100283083 - Niiyama; Yuki ; et al. | 2010-11-11 |
| ED inverter circuit and integrate circuit element including the same Grant 7,821,035 - Nomura , et al. October 26, 2 | 2010-10-26 |
| GaN based semiconductor element Grant 7,812,371 - Kaya , et al. October 12, 2 | 2010-10-12 |
| Field Effect Transistor And Method Of Manufacturing The Same App 20100219451 - Chow; Tat-Sing Paul ; et al. | 2010-09-02 |
| Iii-nitride Semiconductor Field Effect Transistor App 20100219455 - Niiyama; Yuki ; et al. | 2010-09-02 |
| Field Effect Transistor And Method Of Manufacturing The Same App 20100127307 - Nomura; Takehiko ; et al. | 2010-05-27 |
| Nitride semiconductor heterojunction field effect transistor Grant 7,723,752 - Yoshida , et al. May 25, 2 | 2010-05-25 |
| Semiconductor Device App 20100032716 - Sato; Yoshihiro ; et al. | 2010-02-11 |
| GaN-BASED SEMICONDUCTOR ELEMENT App 20100032683 - Ikeda; Nariaki ; et al. | 2010-02-11 |
| Process for producing semiconductor device App 20090325339 - Niiyama; Yuki ; et al. | 2009-12-31 |
| GaN based semiconductor element App 20090278172 - Kaya; Shusuke ; et al. | 2009-11-12 |
| Ed Inverter Circuit And Integrate Circuit Element Including The Same App 20090250767 - Nomura; Takehiko ; et al. | 2009-10-08 |
| Field effect transistor App 20090242938 - Niiyama; Yuki ; et al. | 2009-10-01 |
| Method of producing field effect transistor App 20090246924 - NIIYAMA; Yuki ; et al. | 2009-10-01 |
| Field effect transister and process for producing the same App 20090194790 - Sato; Yoshihiro ; et al. | 2009-08-06 |
| GaN-based semiconductor device and method of manufacturing the same App 20090140295 - Kaya; Shusuke ; et al. | 2009-06-04 |
| Nitride semiconductor heterojunction field effect transistor App 20080135880 - YOSHIDA; Seikoh ; et al. | 2008-06-12 |
| Nitride-based compound semiconductor electron device including a buffer layer structure Grant 7,329,908 - Yoshida February 12, 2 | 2008-02-12 |
| Iii-v Nitride Semiconductor Device And Method Of Forming Electrode App 20080006846 - Ikeda; Nariaki ; et al. | 2008-01-10 |
| GaN SEMICONDUCTOR DEVICE App 20070210335 - Ikeda; Nariaki ; et al. | 2007-09-13 |
| Semiconductor device App 20070051979 - Kambayashi; Hiroshi ; et al. | 2007-03-08 |
| Semiconductor electronic device App 20070045639 - Kato; Sadahiro ; et al. | 2007-03-01 |
| GaN-based field effect transistor of a normally-off type Grant 7,038,253 - Yoshida , et al. May 2, 2 | 2006-05-02 |
| GaN-based semiconductor integrated circuit App 20060081897 - Yoshida; Seikoh | 2006-04-20 |
| Field effect transistor and manufacturing method therefor Grant 6,897,495 - Yoshida , et al. May 24, 2 | 2005-05-24 |
| Nitride-based compound semiconductor electron device App 20050051804 - Yoshida, Seikoh | 2005-03-10 |
| GaN-based field effect transistor App 20050023555 - Yoshida, Seikoh ; et al. | 2005-02-03 |
| III-V nitride semiconductor device, and protection element and power conversion apparatus using the same Grant 6,768,146 - Yoshida July 27, 2 | 2004-07-27 |
| GaN-based semiconductor device Grant 6,674,101 - Yoshida January 6, 2 | 2004-01-06 |
| GaN-based compound semiconductor device Grant 6,580,101 - Yoshida June 17, 2 | 2003-06-17 |
| III-V nitride semiconductor device, and protection element and power conversion apparatus using the same App 20030098462 - Yoshida, Seikoh | 2003-05-29 |
| Field effect transistor and manufacturing method therefor App 20030082860 - Yoshida, Seikoh ; et al. | 2003-05-01 |
| GaN-based high electron mobility transistor Grant 6,534,801 - Yoshida March 18, 2 | 2003-03-18 |
| GaN-based semiconductor device App 20020182791 - Yoshida, Seikoh | 2002-12-05 |
| GaN-based light emitting device App 20020136932 - Yoshida, Seikoh | 2002-09-26 |
| Semiconductor device and GaN-based field effect transistor for use in the same App 20020125506 - Yoshida, Seikoh ; et al. | 2002-09-12 |
| GaN-based high electron mobility transistor App 20020079508 - Yoshida, Seikoh | 2002-06-27 |
| GaN-based compound semiconductor device App 20010032999 - Yoshida, Seikoh | 2001-10-25 |
| GaN field-effect transistor, inverter device, and production processes therefor App 20010015437 - Ishii, Hirotatsu ; et al. | 2001-08-23 |
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