loadpatents
name:-0.040132999420166
name:-0.036765813827515
name:-0.017867088317871
YOSHIDA; Naomi Patent Filings

YOSHIDA; Naomi

Patent Applications and Registrations

Patent applications and USPTO patent grants for YOSHIDA; Naomi.The latest application filed is for "horizontal gate-all-around device nanowire air gap spacer formation".

Company Profile
19.36.38
  • YOSHIDA; Naomi - Sunnyvale CA
  • Yoshida; Naomi - Funabashi-Shi Chiba 273-0024 JP
  • Yoshida; Naomi - Ishikawa JP
  • Yoshida; Naomi - Narita JP
  • Yoshida; Naomi - Kure JP
  • Yoshida; Naomi - Hiroshima JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Horizontal Gate-all-around Device Nanowire Air Gap Spacer Formation
App 20220173220 - SUN; Shiyu ;   et al.
2022-06-02
Integrated Dipole Flow For Transistor
App 20220115516 - Lin; Yongjing ;   et al.
2022-04-14
Horizontal gate all around device nanowire air gap spacer formation
Grant 11,282,936 - Sun , et al. March 22, 2
2022-03-22
Integrated dipole flow for transistor
Grant 11,245,022 - Lin , et al. February 8, 2
2022-02-08
Fluorine-free Tungsten Ald For Dielectric Selectivity Improvement
App 20210384036 - Fisher; Ilanit ;   et al.
2021-12-09
Fluorine-Free Tungsten ALD And Tungsten Selective CVD For Dielectrics
App 20210384035 - Fisher; Ilanit ;   et al.
2021-12-09
Method Of Dielectric Material Fill And Treatment
App 20210317580 - YOU; Shi ;   et al.
2021-10-14
Horizontal gate all around and FinFET device isolation
Grant 11,145,761 - Sun , et al. October 12, 2
2021-10-12
Method Of Cleaning A Structure And Method Of Depositing A Capping Layer In A Structure
App 20210233765 - YOSHIDA; Naomi ;   et al.
2021-07-29
Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors
Grant 11,075,276 - Lin , et al. July 27, 2
2021-07-27
Horizontal Gate All Around Device Nanowire Air Gap Spacer Formation
App 20200411656 - SUN; Shiyu ;   et al.
2020-12-31
Integrated Dipole Flow For Transistor
App 20200373404 - Lin; Yongjing ;   et al.
2020-11-26
Horizontal gate all around device nanowire air gap spacer formation
Grant 10,777,650 - Sun , et al. Sept
2020-09-15
Tantalum-containing material removal
Grant 10,727,080 - Wang , et al.
2020-07-28
Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films
Grant 10,665,450 - Yang , et al.
2020-05-26
Methods And Apparatus For N-type Metal Oxide Semiconductor (nmos) Metal Gate Materials Using Atomic Layer Deposition (ald) Proce
App 20200111885 - LIN; YONGJING ;   et al.
2020-04-09
Low thickness dependent work-function nMOS integration for metal gate
Grant 10,608,097 - Ma , et al.
2020-03-31
Oxygen Free Deposition Of Platinum Group Metal Films
App 20200063263 - Yang; Yixiong ;   et al.
2020-02-27
Horizontal gate all around device isolation
Grant 10,573,719 - Sun , et al. Feb
2020-02-25
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD
Grant 10,553,425 - Kachian , et al. Fe
2020-02-04
Horizontal Gate All Around And Finfet Device Isolation
App 20200035822 - SUN; Shiyu ;   et al.
2020-01-30
Horizontal gate all around and FinFET device isolation
Grant 10,490,666 - Sun , et al. Nov
2019-11-26
Method for fabricating asymmetrical three dimensional device
Grant 10,381,465 - Sun , et al. A
2019-08-13
Surface functionalization and passivation with a control layer
Grant 10,262,858 - Yoshida , et al.
2019-04-16
Methods And Apparatus For Doping Engineering And Threshold Voltage Tuning By Integrated Deposition Of Titanium Nitride And Aluminum Films
App 20190057863 - YANG; YIXIONG ;   et al.
2019-02-21
Low Thickness Dependent Work-Function nMOS Integration For Metal Gate
App 20190019874 - Ma; Paul F. ;   et al.
2019-01-17
Tantalum-containing Material Removal
App 20190013211 - Wang; Xikun ;   et al.
2019-01-10
Method for fabricating junctions and spacers for horizontal gate all around devices
Grant 10,177,227 - Yoshida , et al. J
2019-01-08
Aluminum content control of TiAIN films
Grant 10,170,321 - Zhang , et al. J
2019-01-01
Low temperature atomic layer deposition of oxides on compound semiconductors
Grant 10,134,585 - Sardashti , et al. November 20, 2
2018-11-20
Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
Grant 10,109,534 - Brand , et al. October 23, 2
2018-10-23
Aluminum Content Control of TiAIN Films
App 20180269065 - Zhang; Wenyu ;   et al.
2018-09-20
Horizontal Gate All Around And Finfet Device Isolation
App 20180061978 - SUN; Shiyu ;   et al.
2018-03-01
Self-limiting And Saturating Chemical Vapor Deposition Of A Silicon Bilayer And Ald
App 20180019116 - KACHIAN; Jessica S. ;   et al.
2018-01-18
Horizontal gate all around and FinFET device isolation
Grant 9,865,735 - Sun , et al. January 9, 2
2018-01-09
Surface Functionalization And Passivation With A Control Layer
App 20170309479 - YOSHIDA; Naomi ;   et al.
2017-10-26
Horizontal Gate All Around Device Nanowire Air Gap Spacer Formation
App 20170309719 - SUN; Shiyu ;   et al.
2017-10-26
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD
Grant 9,773,663 - Kachian , et al. September 26, 2
2017-09-26
Method for fabricating three dimensional device
Grant 9,748,364 - Sun , et al. August 29, 2
2017-08-29
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof
Grant 9,748,354 - Tang , et al. August 29, 2
2017-08-29
Multi-threshold Voltage Structures With A Lanthanum Nitride Film And Methods Of Formation Thereof
App 20170179252 - TANG; Wei V. ;   et al.
2017-06-22
Methods and apparatus for forming horizontal gate all around device structures
Grant 9,673,277 - Brand , et al. June 6, 2
2017-06-06
Low Temperature Ald On Semiconductor And Metallic Surfaces
App 20170040158 - KACHIAN; Jessica S. ;   et al.
2017-02-09
Self-limiting And Saturating Chemical Vapor Deposition Of A Silicon Bilayer And Ald
App 20170040159 - KACHIAN; Jessica S. ;   et al.
2017-02-09
Horizontal Gate All Around Device Isolation
App 20170018624 - SUN; Shiyu ;   et al.
2017-01-19
Horizontal Gate All Around And Finfet Device Isolation
App 20160336405 - SUN; Shiyu ;   et al.
2016-11-17
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
Grant 9,484,406 - Sun , et al. November 1, 2
2016-11-01
Method For Fabricating Three Dimensional Device
App 20160315176 - Sun; Shiyu ;   et al.
2016-10-27
Method For Fabricating Asymmetrical Three Dimensional Device
App 20160315177 - Sun; Shiyu ;   et al.
2016-10-27
Horizontal gate all around device isolation
Grant 9,460,920 - Sun , et al. October 4, 2
2016-10-04
Methods for removing carbon containing films
Grant 9,355,820 - Liu , et al. May 31, 2
2016-05-31
Methods And Apparatus For Forming Horizontal Gate All Around Device Structures
App 20160111495 - BRAND; ADAM ;   et al.
2016-04-21
Low Temperature Atomic Layer Deposition Of Oxides On Compound Semiconductors
App 20160056033 - Sardashti; Kasra ;   et al.
2016-02-25
MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD)
App 20150262828 - BRAND; ADAM ;   et al.
2015-09-17
Metal gate structures for field effect transistors and method of fabrication
Grant 9,018,054 - Yoshida , et al. April 28, 2
2015-04-28
Methods For Removing Carbon Containing Films
App 20150072526 - LIU; WEI ;   et al.
2015-03-12
Metal gate structures for field effect transistors and method of fabrication
App 20140264483 - Yoshida; Naomi ;   et al.
2014-09-18
Amorphous carbon deposition method for improved stack defectivity
Grant 8,349,741 - Yu , et al. January 8, 2
2013-01-08
Amorphous Carbon Deposition Method For Improved Stack Defectivity
App 20120208374 - Yu; Hang ;   et al.
2012-08-16
Amorphous carbon deposition method for improved stack defectivity
Grant 8,227,352 - Yu , et al. July 24, 2
2012-07-24
Amorphous Carbon Deposition Method For Improved Stack Defectivity
App 20120015521 - Yu; Hang ;   et al.
2012-01-19
Test structure design for reliability test
Grant 7,365,529 - Yoshida , et al. April 29, 2
2008-04-29
System for automatically generating continuous developed still image from video image of inner wall of tubular object
Grant 7,324,137 - Akizuki , et al. January 29, 2
2008-01-29
Test Structure Design For Reliability Test
App 20070013363 - Yoshida; Naomi ;   et al.
2007-01-18
Test structure design for reliability test
Grant 7,119,571 - Yoshida , et al. October 10, 2
2006-10-10
State management device, state management system, and job processing system
App 20060150032 - Furukawa; Kouji ;   et al.
2006-07-06
Test structure design for reliability test
App 20060109022 - Yoshida; Naomi ;   et al.
2006-05-25
System for automatically generating continuous developed still image from video image of inner wall of tubular object
App 20050168593 - Akizuki, Naomichi ;   et al.
2005-08-04
Film deposition method and apparatus
Grant 6,852,626 - Wada , et al. February 8, 2
2005-02-08
Exhaust emission control catalyst element, catalyst structure, production method thereof, exhaust emission control apparatus and exhaust emission control method using the apparatus
Grant 6,833,117 - Kato , et al. December 21, 2
2004-12-21
Film deposition method and apparatus
Grant 6,488,984 - Wada , et al. December 3, 2
2002-12-03
Process for producing a denitration catalyst
Grant 5,294,584 - Yoshida , et al. March 15, 1
1994-03-15

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