Yin; Jinsong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yin; Jinsong.The latest application filed is for "method of forming a metal gate structure with tuning of work function by silicon incorporation".

Company Profile

0.15.2

Yin; Jinsong - Sunnyvale CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Trademarks

Patent Activity

Patent	Date
Method for manufacturing a contact for a semiconductor component and related structure Grant 9,202,758 - Besser , et al. December 1, 2	2015-12-01
Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layer Grant 8,039,391 - Yin , et al. October 18, 2	2011-10-18
Aggressive cleaning process for semiconductor device contact formation Grant 7,476,604 - Cheng , et al. January 13, 2	2009-01-13
Semiconductor component having a contact structure and method of manufacture Grant 7,407,882 - Wang , et al. August 5, 2	2008-08-05
Method for manufacturing a memory device having a nanocrystal charge storage region Grant 7,335,594 - Wang , et al. February 26, 2	2008-02-26
Method for manufacturing a semiconductor component that inhibits formation of wormholes Grant 7,217,660 - Wang , et al. May 15, 2	2007-05-15
Method of forming a metal gate structure with tuning of work function by silicon incorporation Grant 7,071,086 - Woo , et al. July 4, 2	2006-07-04
Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric Grant 7,060,571 - Ngo , et al. June 13, 2	2006-06-13
Engineered metal gate electrode Grant 7,033,888 - Pan , et al. April 25, 2	2006-04-25
Method of forming a contact in a semiconductor device with formation of silicide prior to plasma treatment Grant 6,927,162 - Yu , et al. August 9, 2	2005-08-09
One step deposition method for high-k dielectric and metal gate electrode Grant 6,893,910 - Woo , et al. May 17, 2	2005-05-17
Method of manufacturing semiconductor device comprising silicon-rich tasin metal gate electrode Grant 6,861,350 - Ngo , et al. March 1, 2	2005-03-01
Gate dielectric quality for replacement metal gate transistors Grant 6,830,998 - Pan , et al. December 14, 2	2004-12-14
Method of forming a metal gate structure with tuning of work function by silicon incorporation App 20040214416 - Woo, Christy ; et al.	2004-10-28
Engineered metal gate electrode App 20040175910 - Pan, James N. ; et al.	2004-09-09
Engineered metal gate electrode Grant 6,727,560 - Pan , et al. April 27, 2	2004-04-27

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