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Plasma reactor for ultra-high aspect ratio etching and etching method thereof Grant 11,189,496 - Yin , et al. November 30, 2 | 2021-11-30 |
Semiconductor Processing System App 20210358781 - TAO; Heng ;   et al. | 2021-11-18 |
Plasma Reactor For Ultra-high Aspect Ratio Etching And Etching Method Thereof App 20200251345 - Kind Code | 2020-08-06 |
Capacitive-coupled plasma processing apparatus and method for processing substrate Grant 9,230,781 - Liu , et al. January 5, 2 | 2016-01-05 |
Method For In Situ Cleaning Of Mocvd Reaction Chamber App 20140083452 - Yin; Gerald Zheyao ;   et al. | 2014-03-27 |
Method For In Situ Cleaning Of Mocvd Reaction Chamber App 20140083453 - Yin; Gerald Zheyao ;   et al. | 2014-03-27 |
Method For In Situ Cleaning Of Mocvd Reaction Chamber App 20140083451 - Yin; Gerald Zheyao ;   et al. | 2014-03-27 |
Chemical Vapor Deposition Or Epitaxial-layer Growth Reactor And Supporter Thereof App 20130125820 - YIN; Gerald Zheyao ;   et al. | 2013-05-23 |
Capacitive-coupled Plasma Processing Apparatus And Method For Processing Substrate App 20130032574 - Liu; Zhongdu ;   et al. | 2013-02-07 |
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression Grant 7,030,335 - Hoffman , et al. April 18, 2 | 2006-04-18 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene Grant 6,949,203 - Hsieh , et al. September 27, 2 | 2005-09-27 |
Highly selective process for etching oxide over nitride using hexafluorobutadiene Grant 6,849,193 - Hung , et al. February 1, 2 | 2005-02-01 |
Plasma reactor with overhead RF electrode tuned to the plasma Grant 6,838,635 - Hoffman , et al. January 4, 2 | 2005-01-04 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene Grant 6,793,835 - Luo , et al. September 21, 2 | 2004-09-21 |
Self-cleaning etch process Grant 6,699,399 - Qian , et al. March 2, 2 | 2004-03-02 |
Coated silicon carbide cermet used in a plasma reactor App 20030198749 - Kumar, Ananda H. ;   et al. | 2003-10-23 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene App 20030164354 - Hsieh, Chang-Lin ;   et al. | 2003-09-04 |
Plasma reactor with overhead RF electrode tuned to the plasma App 20030062344 - Hoffman, Daniel J. ;   et al. | 2003-04-03 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene App 20030057179 - Luo, Lee ;   et al. | 2003-03-27 |
Plasma reactor with overhead RF electrode tuned to the plasma Grant 6,528,751 - Hoffman , et al. March 4, 2 | 2003-03-04 |
Plasma reactor using inductive RF coupling, and processes Grant 6,518,195 - Collins , et al. February 11, 2 | 2003-02-11 |
Highly selective process for etching oxide over nitride using hexafluorobutadiene App 20030000913 - Hung, Hoiman ;   et al. | 2003-01-02 |
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene Grant 6,500,357 - Luo , et al. December 31, 2 | 2002-12-31 |
Magnetic confinement in a plasma reactor having an RF bias electrode Grant 6,488,807 - Collins , et al. December 3, 2 | 2002-12-03 |
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression App 20020108933 - Hoffman, Daniel J. ;   et al. | 2002-08-15 |
Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window Grant 6,387,287 - Hung , et al. May 14, 2 | 2002-05-14 |
Treatment of etching chambers using activated cleaning gas Grant 6,379,575 - Yin , et al. April 30, 2 | 2002-04-30 |
RF plasma method Grant 6,270,687 - Ye , et al. August 7, 2 | 2001-08-07 |
Plasma etch processes Grant 6,251,792 - Collins , et al. June 26, 2 | 2001-06-26 |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling Grant 6,248,250 - Hanawa , et al. June 19, 2 | 2001-06-19 |
Plasma reactor having a helicon wave high density plasma source Grant 6,189,484 - Yin , et al. February 20, 2 | 2001-02-20 |
Self-cleaning etch process Grant 6,136,211 - Qian , et al. October 24, 2 | 2000-10-24 |
Boron carbide parts and coatings in a plasma reactor Grant 6,120,640 - Shih , et al. September 19, 2 | 2000-09-19 |
Plasma reactor with heated source of a polymer-hardening precursor material Grant 6,036,877 - Collins , et al. March 14, 2 | 2000-03-14 |
Magnetically confined plasma reactor for processing a semiconductor wafer Grant 6,030,486 - Loewenhardt , et al. February 29, 2 | 2000-02-29 |
Inductively and multi-capacitively coupled plasma reactor Grant 6,020,686 - Ye , et al. February 1, 2 | 2000-02-01 |
Lift pin for dechucking substrates Grant 5,900,062 - Loewenhardt , et al. May 4, 1 | 1999-05-04 |
Plasma uniformity control for an inductive plasma source Grant 5,897,712 - Hanawa , et al. April 27, 1 | 1999-04-27 |
Process gas focusing apparatus and method Grant 5,891,348 - Ye , et al. April 6, 1 | 1999-04-06 |
Gas injection slit nozzle for a plasma process reactor Grant 5,885,358 - Maydan , et al. March 23, 1 | 1999-03-23 |
Compartmentalized substrate processing chamber Grant 5,883,017 - Tepman , et al. March 16, 1 | 1999-03-16 |
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers Grant 5,817,534 - Ye , et al. October 6, 1 | 1998-10-06 |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling Grant 5,777,289 - Hanawa , et al. July 7, 1 | 1998-07-07 |
Method and apparatus for cleaning by-products from plasma chamber surfaces Grant 5,756,400 - Ye , et al. May 26, 1 | 1998-05-26 |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling Grant 5,753,044 - Hanawa , et al. May 19, 1 | 1998-05-19 |
Gas injection slit nozzle for a plasma process reactor Grant 5,746,875 - Maydan , et al. May 5, 1 | 1998-05-05 |
Compartnetalized substrate processing chamber Grant 5,730,801 - Tepman , et al. March 24, 1 | 1998-03-24 |
Inductively and multi-capacitively coupled plasma reactor Grant 5,710,486 - Ye , et al. January 20, 1 | 1998-01-20 |
Gas injection slit nozzle for a plasma process reactor Grant 5,643,394 - Maydan , et al. July 1, 1 | 1997-07-01 |