loadpatents
name:-0.020639181137085
name:-0.046870946884155
name:-0.0026719570159912
Yin; Gerald Zheyao Patent Filings

Yin; Gerald Zheyao

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yin; Gerald Zheyao.The latest application filed is for "semiconductor processing system".

Company Profile
1.37.15
  • Yin; Gerald Zheyao - Shanghai CN
  • Yin; Gerald Zheyao - San Jose CA
  • Yin; Gerald Zheyao - Cupertino CA
  • Yin; Gerald Zheyao - Sunnyvale CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Plasma reactor for ultra-high aspect ratio etching and etching method thereof
Grant 11,189,496 - Yin , et al. November 30, 2
2021-11-30
Semiconductor Processing System
App 20210358781 - TAO; Heng ;   et al.
2021-11-18
Plasma Reactor For Ultra-high Aspect Ratio Etching And Etching Method Thereof
App 20200251345 - Kind Code
2020-08-06
Capacitive-coupled plasma processing apparatus and method for processing substrate
Grant 9,230,781 - Liu , et al. January 5, 2
2016-01-05
Method For In Situ Cleaning Of Mocvd Reaction Chamber
App 20140083452 - Yin; Gerald Zheyao ;   et al.
2014-03-27
Method For In Situ Cleaning Of Mocvd Reaction Chamber
App 20140083453 - Yin; Gerald Zheyao ;   et al.
2014-03-27
Method For In Situ Cleaning Of Mocvd Reaction Chamber
App 20140083451 - Yin; Gerald Zheyao ;   et al.
2014-03-27
Chemical Vapor Deposition Or Epitaxial-layer Growth Reactor And Supporter Thereof
App 20130125820 - YIN; Gerald Zheyao ;   et al.
2013-05-23
Capacitive-coupled Plasma Processing Apparatus And Method For Processing Substrate
App 20130032574 - Liu; Zhongdu ;   et al.
2013-02-07
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
Grant 7,030,335 - Hoffman , et al. April 18, 2
2006-04-18
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
Grant 6,949,203 - Hsieh , et al. September 27, 2
2005-09-27
Highly selective process for etching oxide over nitride using hexafluorobutadiene
Grant 6,849,193 - Hung , et al. February 1, 2
2005-02-01
Plasma reactor with overhead RF electrode tuned to the plasma
Grant 6,838,635 - Hoffman , et al. January 4, 2
2005-01-04
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
Grant 6,793,835 - Luo , et al. September 21, 2
2004-09-21
Self-cleaning etch process
Grant 6,699,399 - Qian , et al. March 2, 2
2004-03-02
Coated silicon carbide cermet used in a plasma reactor
App 20030198749 - Kumar, Ananda H. ;   et al.
2003-10-23
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
App 20030164354 - Hsieh, Chang-Lin ;   et al.
2003-09-04
Plasma reactor with overhead RF electrode tuned to the plasma
App 20030062344 - Hoffman, Daniel J. ;   et al.
2003-04-03
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
App 20030057179 - Luo, Lee ;   et al.
2003-03-27
Plasma reactor with overhead RF electrode tuned to the plasma
Grant 6,528,751 - Hoffman , et al. March 4, 2
2003-03-04
Plasma reactor using inductive RF coupling, and processes
Grant 6,518,195 - Collins , et al. February 11, 2
2003-02-11
Highly selective process for etching oxide over nitride using hexafluorobutadiene
App 20030000913 - Hung, Hoiman ;   et al.
2003-01-02
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
Grant 6,500,357 - Luo , et al. December 31, 2
2002-12-31
Magnetic confinement in a plasma reactor having an RF bias electrode
Grant 6,488,807 - Collins , et al. December 3, 2
2002-12-03
Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
App 20020108933 - Hoffman, Daniel J. ;   et al.
2002-08-15
Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
Grant 6,387,287 - Hung , et al. May 14, 2
2002-05-14
Treatment of etching chambers using activated cleaning gas
Grant 6,379,575 - Yin , et al. April 30, 2
2002-04-30
RF plasma method
Grant 6,270,687 - Ye , et al. August 7, 2
2001-08-07
Plasma etch processes
Grant 6,251,792 - Collins , et al. June 26, 2
2001-06-26
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
Grant 6,248,250 - Hanawa , et al. June 19, 2
2001-06-19
Plasma reactor having a helicon wave high density plasma source
Grant 6,189,484 - Yin , et al. February 20, 2
2001-02-20
Self-cleaning etch process
Grant 6,136,211 - Qian , et al. October 24, 2
2000-10-24
Boron carbide parts and coatings in a plasma reactor
Grant 6,120,640 - Shih , et al. September 19, 2
2000-09-19
Plasma reactor with heated source of a polymer-hardening precursor material
Grant 6,036,877 - Collins , et al. March 14, 2
2000-03-14
Magnetically confined plasma reactor for processing a semiconductor wafer
Grant 6,030,486 - Loewenhardt , et al. February 29, 2
2000-02-29
Inductively and multi-capacitively coupled plasma reactor
Grant 6,020,686 - Ye , et al. February 1, 2
2000-02-01
Lift pin for dechucking substrates
Grant 5,900,062 - Loewenhardt , et al. May 4, 1
1999-05-04
Plasma uniformity control for an inductive plasma source
Grant 5,897,712 - Hanawa , et al. April 27, 1
1999-04-27
Process gas focusing apparatus and method
Grant 5,891,348 - Ye , et al. April 6, 1
1999-04-06
Gas injection slit nozzle for a plasma process reactor
Grant 5,885,358 - Maydan , et al. March 23, 1
1999-03-23
Compartmentalized substrate processing chamber
Grant 5,883,017 - Tepman , et al. March 16, 1
1999-03-16
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
Grant 5,817,534 - Ye , et al. October 6, 1
1998-10-06
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
Grant 5,777,289 - Hanawa , et al. July 7, 1
1998-07-07
Method and apparatus for cleaning by-products from plasma chamber surfaces
Grant 5,756,400 - Ye , et al. May 26, 1
1998-05-26
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
Grant 5,753,044 - Hanawa , et al. May 19, 1
1998-05-19
Gas injection slit nozzle for a plasma process reactor
Grant 5,746,875 - Maydan , et al. May 5, 1
1998-05-05
Compartnetalized substrate processing chamber
Grant 5,730,801 - Tepman , et al. March 24, 1
1998-03-24
Inductively and multi-capacitively coupled plasma reactor
Grant 5,710,486 - Ye , et al. January 20, 1
1998-01-20
Gas injection slit nozzle for a plasma process reactor
Grant 5,643,394 - Maydan , et al. July 1, 1
1997-07-01
Company Registrations
SEC0001739921Yin Gerald Zheyao

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