Yin; Chunshan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yin; Chunshan.The latest application filed is for "fingered capacitor with low-k and ultra-low-k dielectric layers".

Company Profile

5.26.18

Yin; Chunshan - Singapore SG
Yin; Chunshan - Woodlands SG

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Fingered capacitor with low-k and ultra-low-k dielectric layers Grant 11,404,532 - Yin , et al. August 2, 2	2022-08-02
Fingered Capacitor With Low-k And Ultra-low-k Dielectric Layers App 20200357881 - Yin; Chunshan ; et al.	2020-11-12
Fingered capacitor with low-K and ultra-low-K dielectric layers Grant 10,770,539 - Yin , et al. Sep	2020-09-08
Gated diode having fingers with elevated gates Grant 10,680,087 - Hong , et al.	2020-06-09
Fingered Capacitor With Low-k And Ultra-low-k Dielectric Layers App 20200098850 - Yin; Chunshan ; et al.	2020-03-26
Gated Diode Having Fingers With Elevated Gates App 20200075751 - Hong; Cheong Min ; et al.	2020-03-05
Method to tune narrow width effect with raised S/D structure Grant 9,281,308 - Yin , et al. March 8, 2	2016-03-08
Control gate Grant 9,087,813 - Tan , et al. July 21, 2	2015-07-21
Novel Method To Tune Narrow Width Effect With Raised S/d Structure App 20140332902 - Yin; Chunshan ; et al.	2014-11-13
Non-volatile memory using pyramidal nanocrystals as electron storage elements Grant 8,824,208 - Quek , et al. September 2, 2	2014-09-02
Method to tune narrow width effect with raised S/D structure Grant 8,785,287 - Yin , et al. July 22, 2	2014-07-22
Control Gate App 20140151775 - TAN; Shyue Seng ; et al.	2014-06-05
FinFET with novel body contact for multiple Vt applications Grant 8,735,984 - Yin , et al. May 27, 2	2014-05-27
High-K metal gate device Grant 8,691,638 - Tan , et al. April 8, 2	2014-04-08
Methods to reduce gate contact resistance for AC reff reduction Grant 8,674,457 - Toh , et al. March 18, 2	2014-03-18
Control gate Grant 8,647,946 - Tan , et al. February 11, 2	2014-02-11
Modifying growth rate of a device layer Grant 8,633,081 - Yin , et al. January 21, 2	2014-01-21
Non-volatile Memory Using Pyramidal Nanocrystals As Electron Storage Elements App 20130328118 - Quek; Elgin ; et al.	2013-12-12
Integrated circuit system with bandgap material and method of manufacture thereof Grant 8,563,386 - Tan , et al. October 22, 2	2013-10-22
Memory cell with improved retention Grant 8,530,310 - Teo , et al. September 10, 2	2013-09-10
Non-volatile memory using pyramidal nanocrystals as electron storage elements Grant 8,446,779 - Quek , et al. May 21, 2	2013-05-21
Integrated circuit system with a floating dielectric region and method of manufacture thereof Grant 8,242,559 - Yin , et al. August 14, 2	2012-08-14
Modifying Growth Rate Of A Device Layer App 20120168895 - YIN; Chunshan ; et al.	2012-07-05
High-k Metal Gate Device App 20120146160 - TAN; Shyue Seng ; et al.	2012-06-14
Integrated Circuit System With Bandgap Material And Method Of Manufacture Thereof App 20120119281 - Tan; Chung Foong ; et al.	2012-05-17
Novel methods to reduce gate contact resistance for AC reff reduction App 20120038009 - Toh; Eng Huat ; et al.	2012-02-16
FinFET with novel body contact for multiple Vt applications App 20120007180 - Yin; Chunshan ; et al.	2012-01-12
Novel method to tune narrow width effect with raised S/D structure App 20120007185 - Yin; Chunshan ; et al.	2012-01-12
Memory Cell With Improved Retention App 20110156121 - Teo; Lee Wee ; et al.	2011-06-30
Control Gate App 20110115009 - TAN; Shyue Seng ; et al.	2011-05-19
Non-volatile memory using pyramidal nanocrystals as electron storage elements App 20110044115 - Quek; Elgin ; et al.	2011-02-24
Avoiding plasma charging in integrated circuits Grant 7,846,800 - Tan , et al. December 7, 2	2010-12-07
Integrated Circuit System With Vertical Control Gate And Method Of Manufacture Thereof App 20100304556 - Yin; Chunshan ; et al.	2010-12-02
Integrated Circuit System With A Floating Dielectric Region And Method Of Manufacture Thereof App 20100258868 - Yin; Chunshan ; et al.	2010-10-14
Avoiding Plasma Charging In Integrated Circuits App 20090224326 - TAN; Chung Foong ; et al.	2009-09-10

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