Yeung; Chun Wing

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yeung; Chun Wing.The latest application filed is for "replacement-channel fabrication of iii-v nanosheet devices".

Company Profile

53.36.38

Yeung; Chun Wing - Niskayuna NY
Yeung; Chun Wing - Portland OR
Yeung; Chun Wing - Niskayuma NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Stacked upper fin and lower fin transistor with separate gate Grant 11,164,870 - Wu , et al. November 2, 2	2021-11-02
Replacement-channel Fabrication Of Iii-v Nanosheet Devices App 20210305407 - Zhang; Jingyun ; et al.	2021-09-30
Replacement-channel fabrication of III-V nanosheet devices Grant 11,081,567 - Zhang , et al. August 3, 2	2021-08-03
Self-aligned Two-dimensional Material Transistors App 20210233996 - ZHANG; Chen ; et al.	2021-07-29
Measurement of top contact resistance in vertical field-effect transistor devices Grant 11,024,738 - Liu , et al. June 1, 2	2021-06-01
Nanosheet FET including encapsulated all-around source/drain contact Grant 11,011,643 - Xu , et al. May 18, 2	2021-05-18
Self-aligned two-dimensional material transistors Grant 10,991,797 - Zhang , et al. April 27, 2	2021-04-27
Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile Grant 10,985,273 - Yeung , et al. April 20, 2	2021-04-20
Techniques for vertical FET gate length control Grant 10,978,576 - Liu , et al. April 13, 2	2021-04-13
Stacked Transistor With Separate Gate App 20210091079 - Wu; Heng ; et al.	2021-03-25
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact Grant 10,930,567 - Lee , et al. February 23, 2	2021-02-23
Approach to high-k dielectric feature uniformity Grant 10,916,640 - Yamashita , et al. February 9, 2	2021-02-09
Vertically stacked transistors Grant 10,896,851 - Cheng , et al. January 19, 2	2021-01-19
Self-aligned Two-dimensional Material Transistors App 20200295132 - ZHANG; Chen ; et al.	2020-09-17
Measurement Of Top Contact Resistance In Vertical Field-effect Transistor Devices App 20200295175 - Liu; Zuoguang ; et al.	2020-09-17
Double gate two-dimensional material transistor Grant 10,756,205 - Xu , et al. A	2020-08-25
Double Gate Two-dimensional Material Transistor App 20200259009 - A1	2020-08-13
Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly Grant 10,741,681 - Liu , et al. A	2020-08-11
Approach To High-k Dielectric Feature Uniformity App 20200161452 - Yamashita; Tenko ; et al.	2020-05-21
Replacement metal gate processes for vertical transport field-effect transistor Grant 10,658,299 - Lee , et al.	2020-05-19
Increased Source And Drain Contact Edge Width In Two-dimensional Material Field Effect Transistors By Directed Self-assembly App 20200144406 - Liu; Chi-Chun ; et al.	2020-05-07
Vertical tunnel FET with self-aligned heterojunction Grant 10,622,489 - Yeung , et al.	2020-04-14
Preventing strained fin relaxation Grant 10,615,278 - Cheng , et al.	2020-04-07
Approach to high-k dielectric feature uniformity Grant 10,600,887 - Yamashita , et al.	2020-03-24
Nanosheet Fet Including All-around Source/drain Contact App 20200075772 - Xu; Peng ; et al.	2020-03-05
Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly Grant 10,580,886 - Liu , et al.	2020-03-03
Techniques for Vertical FET Gate Length Control App 20200044055 - Liu; Chi-Chun ; et al.	2020-02-06
Nanosheet FET including all-around source/drain contact Grant 10,546,957 - Xu , et al. Ja	2020-01-28
Vertical Field-effect Transistor Including A Fin Having Sidewalls With A Tapered Bottom Profile App 20200027984 - Yeung; Chun Wing ; et al.	2020-01-23
Semiconductor device and method of forming the semiconductor device Grant 10,541,239 - Chao , et al. Ja	2020-01-21
Vertically Stacked Transistors App 20200020587 - Cheng; Kangguo ; et al.	2020-01-16
Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile Grant 10,529,850 - Yeung , et al. J	2020-01-07
Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor Grant 10,522,636 - Yeung , et al. Dec	2019-12-31
Increased Source And Drain Contact Edge Width In Two-dimensional Material Field Effect Transistors By Directed Self-assembly App 20190371925 - Liu; Chi-Chun ; et al.	2019-12-05
Vertically stacked transistors Grant 10,483,166 - Cheng , et al. Nov	2019-11-19
Structure And Method To Form Nanosheet Devices With Bottom Isolation App 20190348403 - Mochizuki; Shogo ; et al.	2019-11-14
Techniques for vertical FET gate length control Grant 10,475,905 - Liu , et al. Nov	2019-11-12
Vertical Field-effect Transistor Including A Fin Having Sidewalls With A Tapered Bottom Profile App 20190326435 - Yeung; Chun Wing ; et al.	2019-10-24
Structure and method to form nanosheet devices with bottom isolation Grant 10,453,824 - Mochizuki , et al. Oc	2019-10-22
MASKLESS EPITAXIAL GROWTH OF PHOSPHORUS-DOPED Si AND BORON-DOPED SiGe (Ge) FOR ADVANCED SOURCE/DRAIN CONTACT App 20190318970 - Lee; Choonghyun ; et al.	2019-10-17
MASKLESS EPITAXIAL GROWTH OF PHOSPHORUS-DOPED Si AND BORON-DOPED SiGe (Ge) FOR ADVANCED SOURCE/DRAIN CONTACT App 20190318969 - Lee; Choonghyun ; et al.	2019-10-17
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact Grant 10,431,502 - Lee , et al. O	2019-10-01
Techniques for forming different gate length vertical transistors with dual gate oxide Grant 10,418,288 - Bao , et al. Sept	2019-09-17
Replacement-channel Fabrication Of Iii-v Nanosheet Devices App 20190280102 - Zhang; Jingyun ; et al.	2019-09-12
Replacement Metal Gate Processes For Vertical Transport Field-effect Transistor App 20190267325 - Lee; Choonghyun ; et al.	2019-08-29
Low-k Dielectric Inner Spacer For Gate All Around Transistors App 20190267463 - Chao; Robin Hsin Kuo ; et al.	2019-08-29
Long Channels For Transistors App 20190252520 - CHAO; ROBIN HSIN KUO ; et al.	2019-08-15
Long Channels For Transistors App 20190252497 - CHAO; ROBIN HSIN KUO ; et al.	2019-08-15
Undercut control in isotropic wet etch processes Grant 10,374,034 - Liu , et al.	2019-08-06
Replacement metal gate processes for vertical transport field-effect transistor Grant 10,373,912 - Lee , et al.	2019-08-06
Techniques for Vertical FET Gate Length Control App 20190237562 - Liu; Chi-Chun ; et al.	2019-08-01
Long channels for transistors Grant 10,355,103 - Chao , et al. July 16, 2	2019-07-16
Replacement Metal Gate Processes For Vertical Transport Field-effect Transistor App 20190214343 - Lee; Choonghyun ; et al.	2019-07-11
Nanosheet Fet Including All-around Source/drain Contact App 20190214502 - Xu; Peng ; et al.	2019-07-11
Techniques for Forming Different Gate Length Vertical Transistors with Dual Gate Oxide App 20190214305 - Bao; Ruqiang ; et al.	2019-07-11
Fin Field-effect Transistor For Input/output Device Integrated With Nanosheet Field-effect Transistor App 20190198629 - YEUNG; CHUN WING ; et al.	2019-06-27
Long Channels For Transistors App 20190189748 - CHAO; ROBIN HSIN KUO ; et al.	2019-06-20
Long Channels For Transistors App 20190189776 - CHAO; ROBIN HSIN KUO ; et al.	2019-06-20
Long channels for transistors Grant 10,312,326 - Chao , et al.	2019-06-04
Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor Grant 10,297,667 - Yeung , et al.	2019-05-21
Approach To High-k Dielectric Feature Uniformity App 20190131435 - Yamashita; Tenko ; et al.	2019-05-02
Vertical Tunnel FET with Self-Aligned Heterojunction App 20190115479 - Yeung; Chun Wing ; et al.	2019-04-18
Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformity Grant 10,170,588 - Yamashita , et al. J	2019-01-01
Semiconductor Device And Method Of Forming The Semiconductor Device App 20180286862 - Chao; Robin Hsin-Ku ; et al.	2018-10-04
Semiconductor device and method of forming the semiconductor device Grant 10,079,233 - Chao , et al. September 18, 2	2018-09-18
Methods, apparatus and system for providing adjustable fin height for a FinFET device Grant 10,068,804 - Xie , et al. September 4, 2	2018-09-04
Methods, Apparatus And System For Providing Adjustable Fin Height For A Finfet Device App 20180218947 - Xie; Ruilong ; et al.	2018-08-02
Semiconductor Device And Method Of Forming The Semiconductor Device App 20180090494 - CHAO; Robin Hsin-Ku ; et al.	2018-03-29
Preventing Strained Fin Relaxation App 20180069027 - Cheng; Kangguo ; et al.	2018-03-08
Preventing strained fin relaxation Grant 9,881,937 - Cheng , et al. January 30, 2	2018-01-30
Preventing Strained Fin Relaxation App 20170117300 - Cheng; Kangguo ; et al.	2017-04-27
Preventing strained fin relaxation by sealing fin ends Grant 9,576,979 - Cheng , et al. February 21, 2	2017-02-21
Strained Silicon Germanium Fin With Controlled Junction For Finfet Devices App 20170025509 - Cheng; Kangguo ; et al.	2017-01-26
Preventing Strained Fin Relaxation App 20160351590 - Cheng; Kangguo ; et al.	2016-12-01

Company Registrations

SEC

0001686813

YEUNG CHUN WING

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