Yeung; Chun W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yeung; Chun W..The latest application filed is for "prevention of extension narrowing in nanosheet field effect transistors".

Company Profile

22.34.26

Yeung; Chun W. - Niskayuna NY
Yeung; Chun W. - Cupertino CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Gate fill utilizing replacement spacer Grant 10,957,763 - Yeung , et al. March 23, 2	2021-03-23
Bottom channel isolation in nanosheet transistors Grant 10,930,793 - Chao , et al. February 23, 2	2021-02-23
Silicon residue removal in nanosheet transistors Grant 10,896,816 - Bi , et al. January 19, 2	2021-01-19
Bottom channel isolation in nanosheet transistors Grant 10,804,410 - Chao , et al. October 13, 2	2020-10-13
Nanosheet MOSFET with gate fill utilizing replacement spacer Grant 10,763,327 - Yeung , et al. Sep	2020-09-01
Prevention of extension narrowing in nanosheet field effect transistors Grant 10,734,502 - Yamashita , et al.	2020-08-04
Reduced resistance source and drain extensions in vertical field effect transistors Grant 10,700,195 - Xu , et al.	2020-06-30
Prevention Of Extension Narrowing In Nanosheet Field Effect Transistors App 20200075744 - Yamashita; Tenko ; et al.	2020-03-05
Sacrificial cap for forming semiconductor contact Grant 10,573,567 - Adusumilli , et al. Feb	2020-02-25
Prevention of extension narrowing in nanosheet field effect transistors Grant 10,541,318 - Yamashita , et al. Ja	2020-01-21
Sacrificial Cap For Forming Semiconductor Contact App 20190341318 - Adusumilli; Praneet ; et al.	2019-11-07
Self-limited inner spacer formation for gate-all-around field effect transistors Grant 10,453,937 - Chao , et al. Oc	2019-10-22
Sacrificial cap for forming semiconductor contact Grant 10,431,503 - Adusumilli , et al. O	2019-10-01
Self-aligned inner-spacer replacement process using implantation Grant 10,411,120 - Chao , et al. Sept	2019-09-10
Prevention of extension narrowing in nanosheet field effect transistors Grant 10,396,177 - Yamashita , et al. A	2019-08-27
Forming bottom isolation layer for nanosheet technology Grant 10,361,269 - Yeung , et al.	2019-07-23
Reduced resistance source and drain extensions in vertical field effect transistors Grant 10,332,995 - Xu , et al.	2019-06-25
Vertical transport fin field effect transistors having different channel lengths Grant 10,325,815 - Bao , et al.	2019-06-18
Self-limited inner spacer formation for gate-all-around field effect transistors Grant 10,326,001 - Chao , et al.	2019-06-18
Reduced Resistance Source And Drain Extensions In Vertical Field Effect Transistors App 20190181263 - Xu; Peng ; et al.	2019-06-13
Gate Fill Utilizing Replacement Spacer App 20190157391 - Yeung; Chun W. ; et al.	2019-05-23
Gate Fill Utilizing Replacement Spacer App 20190157390 - Yeung; Chun W. ; et al.	2019-05-23
Gate fill utilizing replacement spacer Grant 10,297,663 - Yeung , et al.	2019-05-21
Self-aligned inner-spacer replacement process using implantation Grant 10,276,695 - Chao , et al.	2019-04-30
Reduced resistance source and drain extensions in vertical field effect transistors Grant 10,269,957 - Xu , et al.	2019-04-23
Semiconductor device including enhanced low-k spacer Grant 10,256,321 - Cheng , et al.	2019-04-09
Silicon Residue Removal In Nanosheet Transistors App 20190096669 - Bi; Zhenxing ; et al.	2019-03-28
Vertical transport fin field effect transistors having different channel lengths Grant 10,242,919 - Bao , et al.	2019-03-26
Uniform low-k inner spacer module in gate-all-around (GAA) transistors Grant 10,243,060 - Chao , et al.	2019-03-26
Airgap spacers Grant 10,217,868 - Cheng , et al. Feb	2019-02-26
Vertical Transport Fin Field Effect Transistors Having Different Channel Lengths App 20180358268 - Bao; Ruqiang ; et al.	2018-12-13
Vertical Transport Fin Field Effect Transistors Having Different Channel Lengths App 20180358269 - Bao; Ruqiang ; et al.	2018-12-13
Prevention Of Extension Narrowing In Nanosheet Field Effect Transistors App 20180315828 - Yamashita; Tenko ; et al.	2018-11-01
Prevention Of Extension Narrowing In Nanosheet Field Effect Transistors App 20180315829 - Yamashita; Tenko ; et al.	2018-11-01
Bottom Channel Isolation In Nanosheet Transistors App 20180308988 - Chao; Robin H. ; et al.	2018-10-25
Bottom Channel Isolation In Nanosheet Transistors App 20180308986 - Chao; Robin H. ; et al.	2018-10-25
Gate Fill Utilizing Replacement Spacer App 20180308699 - Yeung; Chun W. ; et al.	2018-10-25
Uniform Low-k Inner Spacer Module In Gate-all-around (gaa) Transistors App 20180277656 - Chao; Robin H. ; et al.	2018-09-27
Forming Bottom Isolation Layer For Nanosheet Technology App 20180261670 - Yeung; Chun W. ; et al.	2018-09-13
Self-limited Inner Spacer Formation For Gate-all-around Field Effect Transistors App 20180212038 - Chao; Robinhsinku ; et al.	2018-07-26
Self-limited Inner Spacer Formation For Gate-all-around Field Effect Transistors App 20180212039 - Chao; Robinhsinku ; et al.	2018-07-26
Forming bottom isolation layer for nanosheet technology Grant 10,032,867 - Yeung , et al. July 24, 2	2018-07-24
Reduced Resistance Source And Drain Extensions In Vertical Field Effect Transistors App 20180197989 - Xu; Peng ; et al.	2018-07-12
Reduced Resistance Source And Drain Extensions In Vertical Field Effect Transistors App 20180197990 - Xu; Peng ; et al.	2018-07-12
Airgap spacers Grant 10,020,400 - Cheng , et al. July 10, 2	2018-07-10
Vertical transport fin field effect transistors having different channel lengths Grant 10,008,417 - Bao , et al. June 26, 2	2018-06-26
Self-limited inner spacer formation for gate-all-around field effect transistors Grant 9,947,767 - Chao , et al. April 17, 2	2018-04-17
Reduced resistance source and drain extensions in vertical field effect transistors Grant 9,935,195 - Xu , et al. April 3, 2	2018-04-03
Sacrificial Cap For Forming Semiconductor Contact App 20180082909 - Adusumilli; Praneet ; et al.	2018-03-22
Semiconductor Device Including Enhanced Low-k Spacer App 20180053830 - Cheng; Kangguo ; et al.	2018-02-22
Self-aligned Inner-spacer Replacement Process Using Implantation App 20180047835 - Chao; Robin Hsin-Kuo ; et al.	2018-02-15
Self-aligned Inner-spacer Replacement Process Using Implantation App 20180047834 - Chao; Robin Hsin-Kuo ; et al.	2018-02-15
Airgap Spacers App 20170358673 - Cheng; Kangguo ; et al.	2017-12-14
Nanosheet FET with wrap-around inner spacer Grant 9,842,914 - Yeung , et al. December 12, 2	2017-12-12
Self-aligned inner-spacer replacement process using implantation Grant 9,831,324 - Chao , et al. November 28, 2	2017-11-28
Sacrificial cap for forming semiconductor contact Grant 9,805,989 - Adusumilli , et al. October 31, 2	2017-10-31
Airgap Spacers App 20170243968 - Cheng; Kangguo ; et al.	2017-08-24
Airgap spacers Grant 9,673,293 - Cheng , et al. June 6, 2	2017-06-06
Techniques to reduce radio frequency noise Grant 7,983,646 - Boireau , et al. July 19, 2	2011-07-19
Techniques To Reduce Radio Frequency Noise App 20080139155 - BOIREAU; OLIVIER ; et al.	2008-06-12