loadpatents
Patent applications and USPTO patent grants for Yeh; Hsin-Hao.The latest application filed is for "finfet device and method of forming same".
Patent | Date |
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FinFET Device and Method of Forming Same App 20220231169 - Yeh; Hsin-Hao ;   et al. | 2022-07-21 |
Forming low-stress silicon nitride layer through hydrogen treatment Grant 11,393,674 - Hsieh , et al. July 19, 2 | 2022-07-19 |
FinFET device and method of forming same Grant 11,296,225 - Yeh , et al. April 5, 2 | 2022-04-05 |
System And Method For Annealing Die And Wafer App 20210257230 - YEH; Hsin-Hao | 2021-08-19 |
System and method for annealing die and wafer Grant 11,011,394 - Yeh May 18, 2 | 2021-05-18 |
Gaseous spacer and methods of forming same Grant 10,868,131 - Yeh , et al. December 15, 2 | 2020-12-15 |
Gaseous Spacer and Methods of Forming Same App 20200044042 - Yeh; Hsin-Hao ;   et al. | 2020-02-06 |
FinFET Device and Method of Forming Same App 20200006565 - Yeh; Hsin-Hao ;   et al. | 2020-01-02 |
Gaseous Spacer and Methods of Forming Same App 20190386111 - Yeh; Hsin-Hao ;   et al. | 2019-12-19 |
Gaseous spacer and methods of forming same Grant 10,510,861 - Yeh , et al. Dec | 2019-12-17 |
Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment App 20190355570 - Hsieh; Wei-Che ;   et al. | 2019-11-21 |
System And Method For Annealing Die And Wafer App 20190157119 - YEH; Hsin-Hao | 2019-05-23 |
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