| Patent | Date |
|---|
Structural body and method for manufacturing semiconductor substrate
Grant 8,878,345 - Yao , et al. November 4, 2 | 2014-11-04 |
Structural Body And Method For Manufacturing Semiconductor Substrate
App 20130062739 - Yao; Takafumi ; et al. | 2013-03-14 |
Group III nitride semiconductor and a manufacturing method thereof
Grant 8,216,869 - Yao , et al. July 10, 2 | 2012-07-10 |
Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
Grant 8,124,504 - Yao , et al. February 28, 2 | 2012-02-28 |
Semiconductor substrate fabrication by etching of a peeling layer
Grant 8,119,499 - Yao , et al. February 21, 2 | 2012-02-21 |
Device manufacturing method
Grant 7,906,409 - Yao , et al. March 15, 2 | 2011-03-15 |
Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
Grant 7,829,435 - Yao , et al. November 9, 2 | 2010-11-09 |
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
Grant 7,829,207 - Kato , et al. November 9, 2 | 2010-11-09 |
METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT
App 20100120234 - Yao; Takafumi ; et al. | 2010-05-13 |
METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT
App 20100009516 - Yao; Takafumi ; et al. | 2010-01-14 |
Device Manufacturing Method
App 20090239356 - Yao; Takafumi ; et al. | 2009-09-24 |
Group III nitride semiconductor and a manufacturing method thereof
App 20090057835 - Yao; Takafumi ; et al. | 2009-03-05 |
MANUFACTURE METHOD FOR ZnO BASED COMPOUND SEMICONDUCTOR CRYSTAL AND ZnO BASED COMPOUND SEMICONDUCTOR SUBSTRATE
App 20090045398 - Kato; Hiroyuki ; et al. | 2009-02-19 |
ZnO group epitaxial semiconductor device and its manufacture
Grant 7,482,618 - Kato , et al. January 27, 2 | 2009-01-27 |
Process for producing GaN substrate
Grant 7,479,188 - Yao , et al. January 20, 2 | 2009-01-20 |
Semiconductor Substrate Fabrication Method
App 20080299746 - Yao; Takafumi ; et al. | 2008-12-04 |
Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element
App 20080261378 - Yao; Takafumi ; et al. | 2008-10-23 |
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
Grant 7,438,762 - Kato , et al. October 21, 2 | 2008-10-21 |
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
App 20070152233 - Kato; Hiroyuki ; et al. | 2007-07-05 |
Process for producing gan substrate
App 20060252164 - Yao; Takafumi ; et al. | 2006-11-09 |
ZnO group epitaxial semiconductor device and its manufacture
App 20060170013 - Kato; Hiroyuki ; et al. | 2006-08-03 |
ZnO group epitaxial semiconductor device and its manufacture
App 20050145840 - Kato, Hiroyuki ; et al. | 2005-07-07 |
P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
Grant 6,896,731 - Yamamoto , et al. May 24, 2 | 2005-05-24 |
Semiconductor light-emitting element having first and second epitaxial layer group II-VI semiconductor compounds on a substrate
Grant 6,777,720 - Yao , et al. August 17, 2 | 2004-08-17 |
P-type contact electrode device and light-emitting device
Grant 6,664,570 - Yao , et al. December 16, 2 | 2003-12-16 |
ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal
Grant 6,664,565 - Sano , et al. December 16, 2 | 2003-12-16 |
Semiconductor light-emitting element
App 20020134989 - Yao, Takafumi ; et al. | 2002-09-26 |
p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals
Grant 6,407,405 - Sano , et al. June 18, 2 | 2002-06-18 |
| 