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Patent applications and USPTO patent grants for YANG; Ya-Yu.The latest application filed is for "semiconductor power device".
Patent | Date |
---|---|
Semiconductor Power Device App 20210359123 - YANG; Ya-Yu ;   et al. | 2021-11-18 |
Semiconductor power device Grant 11,094,814 - Yang , et al. August 17, 2 | 2021-08-17 |
High electron mobility transistor and methods for manufacturing the same Grant 11,049,961 - Tu , et al. June 29, 2 | 2021-06-29 |
Nitride semiconductor epitaxial stack structure and power device thereof Grant 10,734,509 - Tu , et al. | 2020-08-04 |
High Electron Mobility Transistor And Methods For Manufacturing The Same App 20200006543 - TU; Shang-Ju ;   et al. | 2020-01-02 |
Nitride Semiconductor Epitaxial Stack Structure And Power Device Thereof App 20190341479 - TU; SHANG JU ;   et al. | 2019-11-07 |
Semiconductor device Grant 10,396,191 - Yang , et al. A | 2019-08-27 |
Nitride semiconductor epitaxial stack structure and power device thereof Grant 10,361,295 - Tu , et al. | 2019-07-23 |
Semiconductor power device Grant 10,290,730 - Yang , et al. | 2019-05-14 |
Semiconductor Power Device App 20190103482 - YANG; Ya-Yu ;   et al. | 2019-04-04 |
Heterostructure device Grant 10,204,998 - Yang , et al. Feb | 2019-02-12 |
Semiconductor Device App 20190006501 - Yang; Ya-Yu ;   et al. | 2019-01-03 |
Nitride Semiconductor Epitaxial Stack Structure And Power Device Thereof App 20180240901 - TU; SHANG JU ;   et al. | 2018-08-23 |
Semiconductor device and the method of manufacturing the same Grant 9,711,683 - Lin , et al. July 18, 2 | 2017-07-18 |
Heterostructure Device App 20170117376 - Yang; Ya-Yu ;   et al. | 2017-04-27 |
Heterostructure field-effect transistor Grant 9,577,048 - Yang , et al. February 21, 2 | 2017-02-21 |
Semiconductor Device And The Method Of Manufacturing The Same App 20160093699 - LIN; Heng-Kuang ;   et al. | 2016-03-31 |
Power Device App 20150340484 - YANG; Ya-Yu ;   et al. | 2015-11-26 |
Power Device App 20150137179 - YANG; Ya-Yu ;   et al. | 2015-05-21 |
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