Yang; Rongsheng

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yang; Rongsheng.The latest application filed is for "image sensor pixel cell with switched deep trench isolation structure".

Company Profile

0.26.21

Yang; Rongsheng - San Jose CA
Yang; Rongsheng - Palo Alto CA US
Yang; Rongsheng - Boise ID
Yang; Rongsheng - Meridian ID

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Image sensor pixel cell with switched deep trench isolation structure Grant 9,496,304 - Hu , et al. November 15, 2	2016-11-15
Image Sensor Pixel Cell With Switched Deep Trench Isolation Structure App 20150236058 - Hu; Sing-Chung ; et al.	2015-08-20
Image sensor pixel cell with switched deep trench isolation structure Grant 9,054,007 - Hu , et al. June 9, 2	2015-06-09
Image Sensor Pixel Cell With Switched Deep Trench Isolation Structure App 20150048427 - Hu; Sing-Chung ; et al.	2015-02-19
Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter Grant 8,946,795 - Chen , et al. February 3, 2	2015-02-03
Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors App 20120319242 - Mao; Duli ; et al.	2012-12-20
Multilayer image sensor pixel structure for reducing crosstalk Grant 8,330,195 - Venezia , et al. December 11, 2	2012-12-11
Method, Apparatus And System To Provide Conductivity For A Substrate Of An Image Sensing Pixel App 20120280109 - Mao; Duli ; et al.	2012-11-08
Methods of implanting dopant into channel regions Grant 8,273,619 - Wang , et al. September 25, 2	2012-09-25
Backside-illuminated (bsi) Image Sensor With Reduced Blooming And Electrical Shutter App 20120235212 - Chen; Gang ; et al.	2012-09-20
CMOS image sensor with peripheral trench capacitor Grant 8,253,178 - Yang , et al. August 28, 2	2012-08-28
Multilayer Image Sensor Pixel Structure For Reducing Crosstalk App 20110085067 - Venezia; Vincent ; et al.	2011-04-14
Multilayer image sensor pixel structure for reducing crosstalk Grant 7,875,918 - Venezia , et al. January 25, 2	2011-01-25
Methods of forming capacitor structures, methods of forming threshold voltage implant regions, and methods of implanting dopant into channel regions App 20100297822 - Wang; Hongmei ; et al.	2010-11-25
Multilayer Image Sensor Pixel Structure For Reducing Crosstalk App 20100271524 - Venezia; Vincent ; et al.	2010-10-28
Methods of implanting dopant into channel regions Grant 7,767,514 - Wang , et al. August 3, 2	2010-08-03
Methods of forming threshold voltage implant regions Grant 7,674,670 - Wang , et al. March 9, 2	2010-03-09
Methods of forming capacitor structures Grant 7,638,392 - Wang , et al. December 29, 2	2009-12-29
Methods of forming threshold voltage implant regions Grant 7,442,600 - Wang , et al. October 28, 2	2008-10-28
Selectively doped trench device isolation Grant 7,259,442 - Kao , et al. August 21, 2	2007-08-21
Transistor structure having reduced transistor leakage attributes Grant 7,157,324 - Agarwal , et al. January 2, 2	2007-01-02
Selectively doped trench device isolation App 20060220109 - Kao; David Y. ; et al.	2006-10-05
Transistor structure having reduced transistor leakage attributes Grant 7,105,899 - Agarwal , et al. September 12, 2	2006-09-12
Methods of forming threshold voltage implant regions App 20060199341 - Wang; Hongmei ; et al.	2006-09-07
Methods of implanting dopant into channel regions App 20060199340 - Wang; Hongmei ; et al.	2006-09-07
Methods of forming capacitor structures App 20060183291 - Wang; Hongmei ; et al.	2006-08-17
Methods of forming capacitor structures, methods of forming threshold voltage implant regions, and methods of implanting dopant into channel regions App 20060046381 - Wang; Hongmei ; et al.	2006-03-02
Transistor structure having reduced transistor leakage attributes App 20050032290 - Agarwal, Vishnu K. ; et al.	2005-02-10
Selectively doped trench device isolation App 20050012174 - Kao, David Y. ; et al.	2005-01-20
Localized array threshold voltage implant to enhance charge storage within DRAM memory cells Grant 6,815,287 - Yang , et al. November 9, 2	2004-11-09
Localized array threshold voltage implant enhance charge storage within DRAM memory cells Grant 6,800,520 - Yang , et al. October 5, 2	2004-10-05
Selectively doped trench device isolation Grant 6,781,212 - Kao , et al. August 24, 2	2004-08-24
MOS transistors with nitrogen in the gate oxide of the p-channel transistor Grant 6,744,102 - Trivedi , et al. June 1, 2	2004-06-01
Localized array threshold voltage implant to enhance charge storage within DRAM memory cells App 20030201471 - Yang, Rongsheng ; et al.	2003-10-30
Localized array threshold voltage implant to enhance charge storage within DRAM memory cells Grant 6,630,706 - Yang , et al. October 7, 2	2003-10-07
Transistor structure having reduced transistor leakage attributes App 20030132428 - Agarwal, Vishnu K. ; et al.	2003-07-17
Semiconductor processing method of forming field effect transistors Grant 6,541,395 - Trivedi , et al. April 1, 2	2003-04-01
Localized array threshold voltage implant to enhance charge storage within DRAM memory cells App 20030042489 - Yang, Rongsheng ; et al.	2003-03-06
Channel implant through gate polysilicon Grant 6,503,805 - Wang , et al. January 7, 2	2003-01-07
P-type FET in a CMOS with nitrogen atoms in the gate dielectric Grant 6,417,546 - Trivedi , et al. July 9, 2	2002-07-09
Integrated circuitry and semiconductor processing method of forming field effect transistors App 20020079542 - Trivedi, Jigish D. ; et al.	2002-06-27
P-type Fet In A Cmos With Nitrogen Atoms In The Gate Dielectric App 20010040256 - TRIVEDI, JIGISH D. ; et al.	2001-11-15
Channel implant through gate polysilicon App 20010016389 - Wang, Zhongze ; et al.	2001-08-23
Methods of forming integrated circuitry and integrated circuitry Grant 6,215,151 - Wu , et al. April 10, 2	2001-04-10
Integrated circuitry and semiconductor processing method of forming field effect transistors Grant 6,093,661 - Trivedi , et al. July 25, 2	2000-07-25
Anisotropic conductive interconnect material for electronic devices, method of use and resulting product Grant 6,011,307 - Jiang , et al. January 4, 2	2000-01-04

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