loadpatents
name:-0.0089311599731445
name:-0.028264999389648
name:-0.00051712989807129
Yang; Jean Yee-Mei Patent Filings

Yang; Jean Yee-Mei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yang; Jean Yee-Mei.The latest application filed is for "memory device protection layer".

Company Profile
0.25.8
  • Yang; Jean Yee-Mei - Glendale CA
  • Yang; Jean Yee-Mei - Sunnyvale CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Dielectric extension to mitigate short channel effects
Grant 9,318,333 - Gopal , et al. April 19, 2
2016-04-19
Memory Device Protection Layer
App 20130228851 - Sugino; Rinji ;   et al.
2013-09-05
Memory device protection layer
Grant 8,415,734 - Sugino , et al. April 9, 2
2013-04-09
Thin oxide dummy tiling as charge protection
Grant 7,977,218 - Chen , et al. July 12, 2
2011-07-12
Using implanted poly-1 to improve charging protection in dual-poly process
Grant 7,553,727 - Kwan , et al. June 30, 2
2009-06-30
Dielectric extension to mitigate short channel effects
App 20080157199 - Gopal; Vidyut ;   et al.
2008-07-03
Thin oxide dummy tiling as charge protection
App 20080153269 - Chen; Cinti ;   et al.
2008-06-26
Using implanted poly-1 to improve charging protection in dual-poly process
App 20080150006 - Kwan; Ming-Sang ;   et al.
2008-06-26
Memory Device Protection Layer
App 20080135913 - Sugino; Rinji ;   et al.
2008-06-12
Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device
Grant 7,163,860 - Kamal , et al. January 16, 2
2007-01-16
Alignment marks with salicided spacers between bitlines for alignment signal improvement
Grant 7,098,546 - Lingunis , et al. August 29, 2
2006-08-29
Memory structure having tunable interlayer dielectric and method for fabricating same
Grant 7,078,749 - Yang , et al. July 18, 2
2006-07-18
Method for forming wordlines having irregular spacing in a memory array
Grant 7,052,961 - Shiraiwa , et al. May 30, 2
2006-05-30
Undoped oxide liner/BPSG for improved data retention
Grant 7,023,046 - Ngo , et al. April 4, 2
2006-04-04
Bitline implant utilizing dual poly
Grant 6,989,320 - Qian , et al. January 24, 2
2006-01-24
Memory device having silicided bitlines and method of forming the same
Grant 6,987,048 - Cheng , et al. January 17, 2
2006-01-17
Bitline implant utilizing dual poly
App 20050255651 - Qian, Weidong ;   et al.
2005-11-17
Multi-bit silicon nitride charge-trapping non-volatile memory cell
Grant 6,897,533 - Yang , et al. May 24, 2
2005-05-24
Method and structure for protecting NROM devices from induced charge damage during device fabrication
Grant 6,869,844 - Liu , et al. March 22, 2
2005-03-22
Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistance
Grant 6,855,608 - Ramsbey , et al. February 15, 2
2005-02-15
Undoped oxide liner/BPSG for improved data retention
App 20050006693 - Ngo, Minh Van ;   et al.
2005-01-13
Methods for fabricating and planarizing dual poly scalable SONOS flash memory
Grant 6,797,565 - Yang , et al. September 28, 2
2004-09-28
Structure and method for suppressing oxide encroachment in a floating gate memory cell
Grant 6,767,791 - Wu , et al. July 27, 2
2004-07-27
Memory array having shallow bit line with silicide contact portion and method of formation
Grant 6,744,105 - Chen , et al. June 1, 2
2004-06-01
Structure and method for reducing charge loss in a memory cell
Grant 6,737,701 - Tu , et al. May 18, 2
2004-05-18
Dummy wordline for erase and bitline leakage
Grant 6,707,078 - Shiraiwa , et al. March 16, 2
2004-03-16
Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory
Grant 6,680,509 - Wu , et al. January 20, 2
2004-01-20
Alignment system for planar charge trapping dielectric memory cell lithography
Grant 6,667,212 - Shiraiwa , et al. December 23, 2
2003-12-23
Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory
Grant 6,440,797 - Wu , et al. August 27, 2
2002-08-27
Source drain implant during ONO formation for improved isolation of SONOS devices
Grant 6,436,768 - Yang , et al. August 20, 2
2002-08-20

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