Yang; Hyuck Soo
Patent Applications and Registrations
Patent applications and USPTO patent grants for Yang; Hyuck Soo.The latest application filed is for "ic product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures".
- Yang; Hyuck Soo - Watervliet NY
- Yang; Hyuck-Soo - Seoul N/A KR
| Patent | Date |
|---|---|
| Ic Product Comprising An Insulating Gate Separation Structure Positioned Between End Surfaces Of Adjacent Gate Structures App 20190355832 - Shu; Jiehui ; et al. | 2019-11-21 |
| Methods of forming replacement gate structures on transistor devices Grant 10,453,936 - Shu , et al. Oc | 2019-10-22 |
| Methods Of Forming Replacement Gate Structures On Transistor Devices App 20190131429 - Shu; Jiehui ; et al. | 2019-05-02 |
| Mask read-only memory having a fake select transistor Grant 8,507,997 - Yang , et al. August 13, 2 | 2013-08-13 |
| Mask Rom App 20110316092 - Yang; Seung-Jin ; et al. | 2011-12-29 |
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