Yang; Hae Wang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yang; Hae Wang.The latest application filed is for "method and resulting structure dram cell with selected inverse narrow width effect".

Company Profile

0.3.3

Yang; Hae Wang - Shanghai CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method and resulting structure DRAM cell with selected inverse narrow width effect Grant 8,338,893 - Yang December 25, 2	2012-12-25
Method And Resulting Structure Dram Cell With Selected Inverse Narrow Width Effect App 20110101464 - Yang; Hae Wang	2011-05-05
Method and resulting structure DRAM cell with selected inverse narrow width effect Grant 7,880,263 - Yang February 1, 2	2011-02-01
Method and resulting structure for DRAM cell and peripheral transistor Grant 7,678,644 - Yang March 16, 2	2010-03-16
Method and Resulting Structure DRAM Cell with Selected Inverse Narrow Width Effect App 20100001367 - Yang; Hae Wang	2010-01-07
Method And Resulting Structure For Dram Cell And Peripheral Transistor App 20080138947 - YANG; HAE WANG	2008-06-12

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