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Patent applications and USPTO patent grants for Yang; Hae Wang.The latest application filed is for "method and resulting structure dram cell with selected inverse narrow width effect".
Patent | Date |
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Method and resulting structure DRAM cell with selected inverse narrow width effect Grant 8,338,893 - Yang December 25, 2 | 2012-12-25 |
Method And Resulting Structure Dram Cell With Selected Inverse Narrow Width Effect App 20110101464 - Yang; Hae Wang | 2011-05-05 |
Method and resulting structure DRAM cell with selected inverse narrow width effect Grant 7,880,263 - Yang February 1, 2 | 2011-02-01 |
Method and resulting structure for DRAM cell and peripheral transistor Grant 7,678,644 - Yang March 16, 2 | 2010-03-16 |
Method and Resulting Structure DRAM Cell with Selected Inverse Narrow Width Effect App 20100001367 - Yang; Hae Wang | 2010-01-07 |
Method And Resulting Structure For Dram Cell And Peripheral Transistor App 20080138947 - YANG; HAE WANG | 2008-06-12 |
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