YANG; Gengyu

Patent Applications and Registrations

Patent applications and USPTO patent grants for YANG; Gengyu.The latest application filed is for "method and system for evaluating stability of hvdc receiving end system, and storage medium".

Company Profile

0.6.9

YANG; Gengyu - Beijing CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method and system for evaluating stability of HVDC receiving end system, and storage medium App 20220021213 - MA; Jing ; et al.	2022-01-20
Transparent Flexible Resistive Memory And Fabrication Method Thereof App 20140145139 - Huang; Ru ; et al.	2014-05-29
Multilevel resistive memory having large storage capacity Grant 8,633,465 - Huang , et al. January 21, 2	2014-01-21
High voltage-resistant lateral double-diffused transistor based on nanowire device Grant 8,564,031 - Huang , et al. October 22, 2	2013-10-22
Flash memory and fabrication method and operation method for the same Grant 8,526,242 - Huang , et al. September 3, 2	2013-09-03
Method For Fabricating Resistive Memory Device App 20130217199 - Huang; Ru ; et al.	2013-08-22
Multilevel Resistive Memory Having Large Storage Capacity App 20130069031 - Huang; Ru ; et al.	2013-03-21
High Voltage-resistant Lateral Double-diffused Transistor Based On Nanowire Device App 20120199808 - Huang; Ru ; et al.	2012-08-09
Flash Memory And Fabrication Method And Operation Method For The Same App 20120113726 - Huang; Ru ; et al.	2012-05-10

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