YANG; Chan-Syun David
Patent Applications and Registrations
Patent applications and USPTO patent grants for YANG; Chan-Syun David.The latest application filed is for "method and equipment for forming gaps in a material layer".
- YANG; Chan-Syun David - Hsinchu TW
- Yang; Chan-Syun David - Taipei TW
- Yang; Chan Syun David - Shinchu TW
- Yang; Chan-Syun David - Taipei City TW
- Yang; Chan-syun David - San Jose CA
- Yang, Chan-syun David - Beverly Hills CA
| Patent | Date |
|---|---|
| Method And Equipment For Forming Gaps In A Material Layer App 20220157648 - YANG; Chan-Syun David ; et al. | 2022-05-19 |
| Method and equipment for forming gaps in a material layer Grant 11,244,856 - Yang , et al. February 8, 2 | 2022-02-08 |
| Air gap spacer and related methods Grant 11,205,700 - Yang , et al. December 21, 2 | 2021-12-21 |
| Semiconductor Device and Method of Manufacture App 20210111071 - Yang; Chan Syun David ; et al. | 2021-04-15 |
| Method Of Forming Semiconductor Structure Having Layer With Re-entrant Profile App 20200388529 - CHEN; Yi-Shan ; et al. | 2020-12-10 |
| Semiconductor device and method of manufacture Grant 10,861,745 - Yang , et al. December 8, 2 | 2020-12-08 |
| Wrap around contact Grant 10,790,370 - Yang September 29, 2 | 2020-09-29 |
| Method of forming semiconductor structure having layer with re-entrant profile Grant 10,755,968 - Chen , et al. A | 2020-08-25 |
| Air Gap Spacer and Related Methods App 20200020776 - Yang; Chan Syun David ; et al. | 2020-01-16 |
| Methods For Forming Wrap Around Contact App 20190259846 - Yang; Chan Syun David | 2019-08-22 |
| Semiconductor Device and Method of Manufacture App 20190164829 - Yang; Chan Syun David ; et al. | 2019-05-30 |
| Method Of Forming Semiconductor Structure Having Layer With Re-entrant Profile App 20190164812 - CHEN; Yi-Shan ; et al. | 2019-05-30 |
| Methods for forming wrap around contact Grant 10,283,603 - Yang | 2019-05-07 |
| Method And Equipment For Forming Gaps In A Material Layer App 20190096739 - Yang; Chan-Syun David ; et al. | 2019-03-28 |
| Semiconductor structure having layer with re-entrant profile and method of forming the same Grant 10,157,773 - Chen , et al. Dec | 2018-12-18 |
| Methods For Forming Wrap Around Contact App 20180219076 - Yang; Chan Syun David | 2018-08-02 |
| Methods for forming wrap around contact Grant 9,935,172 - Yang April 3, 2 | 2018-04-03 |
| Methods For Forming Wrap Around Contact App 20160351671 - Yang; Chan Syun David | 2016-12-01 |
| Self-aligned multiple spacer patterning process Grant 9,472,414 - Yang , et al. October 18, 2 | 2016-10-18 |
| Methods for forming wrap around contact Grant 9,425,310 - Yang August 23, 2 | 2016-08-23 |
| Wrap Around Contact App 20150255604 - Yang; Chan Syun David | 2015-09-10 |
| Method for fabricating an interconnect line Grant 6,767,821 - Yang , et al. July 27, 2 | 2004-07-27 |
| Method of etching a trench in a silicon-on-insulator (SOI) structure Grant 6,759,340 - Nallan , et al. July 6, 2 | 2004-07-06 |
| Method of etching a trench in a silicon-on-insulator (SOI) structure App 20030211753 - Nallan, Padmapani C. ; et al. | 2003-11-13 |
| Method Of Forming A Notched Silicon-containing Gate Structure App 20020151183 - Yang, Chan-syun David ; et al. | 2002-10-17 |
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