Yamanobe; Tomomi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yamanobe; Tomomi.The latest application filed is for "semiconductor device and semiconductor device manufacturing method".

Company Profile

2.7.10

Yamanobe; Tomomi - Miyazaki JP
Yamanobe; Tomomi - Tokyo JP
Yamanobe; Tomomi - Ibaraki JP
Yamanobe; Tomomi - Minato-ku JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device having super junction structure with varying width Grant 11,456,378 - Orita , et al. September 27, 2	2022-09-27
Semiconductor Device And Semiconductor Device Manufacturing Method App 20190259873 - YAMANOBE; TOMOMI ; et al.	2019-08-22
Semiconductor Device And Manufacturing Method Of Semiconductor Device App 20190189800 - Orita; Toshiyuki ; et al.	2019-06-20
Semiconductor device including a columnar intermediate region and manufacturing method thereof Grant 8,058,686 - Yamanobe November 15, 2	2011-11-15
Method for fabricating semiconductor device App 20090227100 - Yamanobe; Tomomi ; et al.	2009-09-10
Semiconductor memory device and method for manufacturing the same Grant 7,547,937 - Yamanobe June 16, 2	2009-06-16
Semiconductror device and manufacturing method thereof App 20090096020 - Yamanobe; Tomomi	2009-04-16
Wiring layer structure for ferroelectric capacitor Grant 7,229,914 - Yamanobe June 12, 2	2007-06-12
Semiconductor Memory Device And Method For Manufacturing The Same App 20060244025 - YAMANOBE; Tomomi	2006-11-02
Ferroelectric memory with read-only memory cells, and fabrication method thereof Grant 6,975,529 - Yamanobe December 13, 2	2005-12-13
Wiring layer structure for ferroelectric capacitor App 20050167714 - Yamanobe, Tomomi	2005-08-04
Semiconductor element Grant 6,914,283 - Yamanobe July 5, 2	2005-07-05
Wiring layer structure for ferroelectric capacitor Grant 6,900,487 - Yamanobe May 31, 2	2005-05-31
Ferroelectric memory with read-only memory cells, and fabrication method thereof App 20040061155 - Yamanobe, Tomomi	2004-04-01
Semiconductor element App 20030234412 - Yamanobe, Tomomi	2003-12-25
Wiring layer structure for ferroelectric capacitor App 20030001192 - Yamanobe, Tomomi	2003-01-02
Semiconductor storage device and its manufacturing method App 20020033493 - Yamanobe, Tomomi	2002-03-21

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