Yamane; Hisanori

Patent Applications and Registrations

Patent applications and USPTO patent grants for Yamane; Hisanori.The latest application filed is for "phosphor, light-emitting device, illumination device and image display device".

Company Profile

0.25.26

Yamane; Hisanori - Sendai JP
Yamane; Hisanori - Miyagi JP
YAMANE; Hisanori - Sendai-shi JP
Yamane; Hisanori - Singapore SG
Yamane; Hisanori - Niihama JP
Yamane, Hisanori - Niihama-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Phosphor, light-emitting device, illumination device and image display device Grant 10,011,768 - Yoshimura , et al. July 3, 2	2018-07-03
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate Grant 9,869,033 - Sarayama , et al. January 16, 2	2018-01-16
Phosphor, Light-emitting Device, Illumination Device And Image Display Device App 20170204328 - YOSHIMURA; Fumitaka ; et al.	2017-07-20
Mail server, mail transmitting/receiving method, and mail transmitting/receiving program Grant 9,590,939 - Yamane March 7, 2	2017-03-07
Mail Server, Mail Transmitting/receiving Method, And Mail Transmitting/receiving Program App 20160261540 - YAMANE; Hisanori	2016-09-08
Boride having chemical composition Na--Si--B, and polycrystalline reaction sintered product of boride and process for production thereof Grant 9,255,010 - Morito , et al. February 9, 2	2016-02-09
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE App 20150152568 - Sarayama; Seiji ; et al.	2015-06-04
Scintillator for neutrons and neutron detector Grant 8,809,797 - Yamane , et al. August 19, 2	2014-08-19
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE App 20140044970 - Sarayama; Seiji ; et al.	2014-02-13
Crystal growth apparatus Grant 8,623,138 - Sarayama , et al. January 7, 2	2014-01-07
Crystal Growth Method, Crystal Growth Apparatus, Group-iii Nitride Crystal And Group-iii Nitride Semiconductor Device App 20130330264 - SARAYAMA; Seiji ; et al.	2013-12-12
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon Grant 8,591,647 - Sarayama , et al. November 26, 2	2013-11-26
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device Grant 8,562,737 - Sarayama , et al. October 22, 2	2013-10-22
BORIDE HAVING CHEMICAL COMPOSITION Na-Si-B, AND POLYCRYSTALLINE REACTION SINTERED PRODUCT OF BORIDE AND PROCESS FOR PRODUCTION THEREOF App 20130266499 - Morito; Haruhiko ; et al.	2013-10-10
Scintillator For Neutrons And Neutron Detector App 20130264482 - Yamane; Hisanori ; et al.	2013-10-10
Method Of Growing Group Iii Nitride Crystal, Group Iii Nitride Crystal Grown Thereby, Group Iii Nitride Crystal Growing Apparatus And Semiconductor Device App 20110012235 - Iwata; Hirokazu ; et al.	2011-01-20
Methods of growing a group III nitride crystal Grant 7,828,896 - Iwata , et al. November 9, 2	2010-11-09
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED THEREON App 20090173274 - SARAYAMA; Seiji ; et al.	2009-07-09
Crystal Growth Method, Crystal Growth Apparatus, Group-iii Nitride Crystal And Group-iii Nitride Semiconductor Device App 20090120354 - Sarayama; Seiji ; et al.	2009-05-14
Crystal growth method Grant 7,531,038 - Sarayama , et al. May 12, 2	2009-05-12
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon Grant 7,508,003 - Sarayama , et al. March 24, 2	2009-03-24
Crystal Growth Method, Crystal Growth Apparatus, Group-iii Nitride Crystal And Group-iii Nitride Semiconductor Device App 20080282969 - Sarayama; Seiji ; et al.	2008-11-20
Method of growing group III nitride crystal, group III nitride crystal grown thereby, group III nitride crystal growing apparatus and semiconductor device App 20070266928 - Iwata; Hirokazu ; et al.	2007-11-22
Methods of growing a group III nitride crystal Grant 7,261,775 - Iwata , et al. August 28, 2	2007-08-28
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate Grant 7,250,640 - Sarayama , et al. July 31, 2	2007-07-31
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon App 20070012239 - Sarayama; Seiji ; et al.	2007-01-18
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device App 20060130739 - Sarayama; Seiji ; et al.	2006-06-22
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device Grant 7,001,457 - Sarayama , et al. February 21, 2	2006-02-21
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device Grant 6,949,140 - Sarayama , et al. September 27, 2	2005-09-27
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device App 20050026318 - Sarayama, Seiji ; et al.	2005-02-03
Method of growing group III nitride crystal, group III nitride crystal grown thereby, group III nitride crystal growing apparatus and semiconductor device App 20040226503 - Iwata, Hirokazu ; et al.	2004-11-18
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device Grant 6,780,239 - Sarayama , et al. August 24, 2	2004-08-24
Electromagnetic shielding plate and method for producing the same Grant 6,717,048 - Ueda , et al. April 6, 2	2004-04-06
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate App 20040031437 - Sarayama, Seiji ; et al.	2004-02-19
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device App 20030164138 - Sarayama, Seiji ; et al.	2003-09-04
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate Grant 6,592,663 - Sarayama , et al. July 15, 2	2003-07-15
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device App 20020175338 - Sarayama, Seiji ; et al.	2002-11-28
Electromagnetic shielding plate and method for producing the same App 20020170730 - Ueda, Kayoko ; et al.	2002-11-21
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device App 20020046695 - Sarayama, Seiji ; et al.	2002-04-25
Low temperature method of preparing GaN single crystals Grant 5,868,837 - DiSalvo , et al. February 9, 1	1999-02-09

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