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name:-0.026309013366699
name:-0.012396097183228
name:-0.0016520023345947
YAMAMOTO; Tomoe Patent Filings

YAMAMOTO; Tomoe

Patent Applications and Registrations

Patent applications and USPTO patent grants for YAMAMOTO; Tomoe.The latest application filed is for "sandbag and method for producing same".

Company Profile
1.11.19
  • YAMAMOTO; Tomoe - Kako-gun JP
  • YAMAMOTO; Tomoe - Kanagawa JP
  • Yamamoto; Tomoe - Tokyo N/A JP
  • Yamamoto; Tomoe - Kawasaki JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Sandbag And Method For Producing Same
App 20210138434 - YAMAMOTO; Tomoe ;   et al.
2021-05-13
Water-absorbing Exfoliator, Method For Producing Same, And Cosmetic
App 20210022965 - Yamamoto; Tomoe ;   et al.
2021-01-28
Method For Fabricating A Metal-insulator-metal (mim) Capacitor Having Capacitor Dielectric Layer Formed By Atomic Layer Deposition (ald)
App 20140327064 - IIZUKA; Toshihiro ;   et al.
2014-11-06
Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)
Grant 8,815,678 - Iizuka , et al. August 26, 2
2014-08-26
Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
Grant 8,304,021 - Yamamoto , et al. November 6, 2
2012-11-06
Semiconductor Device Having A Thin Film Capacitor And Method For Fabricating The Same
App 20120261735 - IIZUKA; Toshihiro ;   et al.
2012-10-18
Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure
Grant 8,212,299 - Iizuka , et al. July 3, 2
2012-07-03
Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1)
Grant 8,169,013 - Iizuka , et al. May 1, 2
2012-05-01
Process for manufacturing a semiconductor device comprising a metal-compound film
Grant 7,943,475 - Yamamoto , et al. May 17, 2
2011-05-17
Vapor Phase Deposition Apparatus, Method For Depositing Thin Film And Method For Manufacturing Semiconductor Device
App 20100003832 - YAMAMOTO; Tomoe ;   et al.
2010-01-07
Method for manufacturing semiconductor device
Grant 7,608,502 - Iino , et al. October 27, 2
2009-10-27
Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
Grant 7,439,181 - Yamamoto October 21, 2
2008-10-21
Method For Fabricating A Metal-insulator-metal (mim) Capacitor Having Capacitor Dielectric Layer Formed By Atomic Layer Deposition (ald)
App 20080064147 - IIZUKA; Toshihiro ;   et al.
2008-03-13
Method For Processing Interior Of Vapor Phase Deposition Apparatus, Method For Depositing Thin Film And Method For Manufacturing Semiconductor Device
App 20070289610 - YAMAMOTO; Tomoe
2007-12-20
Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
Grant 7,276,444 - Yamamoto October 2, 2
2007-10-02
Method for fabricating a metal insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)
App 20070152256 - Iizuka; Toshihiro ;   et al.
2007-07-05
Semiconductor device and manufacturing process therefor
App 20060121671 - Yamamoto; Tomoe ;   et al.
2006-06-08
Method for manufacturing semiconductor device
App 20060046421 - Iino; Tomohisa ;   et al.
2006-03-02
Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
App 20050268853 - Yamamoto, Tomoe ;   et al.
2005-12-08
Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
App 20050268851 - Yamamoto, Tomoe
2005-12-08
Method for forming capacitor
Grant 6,875,667 - Iizuka , et al. April 5, 2
2005-04-05
Semiconductor device having a thin film capacitor and method for fabricating the same
App 20050051824 - Iizuka, Toshihiro ;   et al.
2005-03-10
Semiconductor device and manufacturing process therefor
App 20040217478 - Yamamoto, Tomoe ;   et al.
2004-11-04
Method for forming capacitor
App 20040072401 - Iizuka, Toshihiro ;   et al.
2004-04-15
Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD
Grant 6,596,602 - Iizuka , et al. July 22, 2
2003-07-22
Method for fabricating a semiconductor device
App 20020102810 - Iizuka, Toshihiro ;   et al.
2002-08-01
Method For Manufacturing A Semiconductor Device
App 20020006739 - YAMAMOTO, TOMOE
2002-01-17
Method for manufacturing semiconductor memory and method for manufacturing capacitor
App 20010041402 - Yamamoto, Tomoe
2001-11-15
Fabrication method for MIM capacitive circuit having little leakage current
App 20010023109 - Yamamoto, Tomoe
2001-09-20

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