loadpatents
name:-0.020531892776489
name:-0.011916875839233
name:-0.0016858577728271
YAMAMOTO; Fumitoshi Patent Filings

YAMAMOTO; Fumitoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for YAMAMOTO; Fumitoshi.The latest application filed is for "silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device".

Company Profile
0.9.12
  • YAMAMOTO; Fumitoshi - Tokyo JP
  • Yamamoto; Fumitoshi - Chiyoda-ku JP
  • Yamamoto; Fumitoshi - Hyogo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Silicon Carbide Semiconductor Device And Method Of Manufacturing Silicon Carbide Semiconductor Device
App 20200279947 - YAMAMOTO; Fumitoshi
2020-09-03
Semiconductor Device
App 20110089533 - YAMAMOTO; Fumitoshi
2011-04-21
Semiconductor device
Grant 7,880,262 - Yamamoto February 1, 2
2011-02-01
Semiconductor Device
App 20090189247 - Yamamoto; Fumitoshi
2009-07-30
Semiconductor device, driver circuit and manufacturing method of semiconductor device
Grant 7,339,236 - Nitta , et al. March 4, 2
2008-03-04
Semiconductor device, driver circuit and manufacturing method of semiconductor device
App 20060180862 - Nitta; Tetsuya ;   et al.
2006-08-17
Semiconductor device with surge protection circuit capable of preventing current leakage
Grant 7,026,705 - Yamamoto , et al. April 11, 2
2006-04-11
Semiconductor device with surge protection circuit
App 20040169233 - Yamamoto, Fumitoshi ;   et al.
2004-09-02
Lateral transistor
App 20040144993 - Yamamoto, Fumitoshi ;   et al.
2004-07-29
Semiconductor device having poly-poly capacitor
App 20040140527 - Furuya, Keiichi ;   et al.
2004-07-22
Semiconductor device with surge protection circuit
App 20040120085 - Yamamoto, Fumitoshi ;   et al.
2004-06-24
Semiconductor device having low and high breakdown voltage transistors
Grant 6,693,344 - Sato , et al. February 17, 2
2004-02-17
Semiconductor device having a device formation region protected from a counterelectromotive force
Grant 6,639,294 - Furuya , et al. October 28, 2
2003-10-28
Semiconductor Device Having A Device Formation Region Protected From A Counterelectromotive Force
App 20030146487 - Furuya, Keiichi ;   et al.
2003-08-07
Semiconductor device
Grant 6,593,629 - Yamamoto July 15, 2
2003-07-15
Semiconductor device
App 20030057502 - Yamamoto, Fumitoshi
2003-03-27
Semiconductor device
App 20030015765 - Yamashita, Yasunori ;   et al.
2003-01-23
Semiconductor device
App 20020084489 - Yamamoto, Fumitoshi
2002-07-04
Semiconductor device with DMOS and bi-polar transistors
Grant 6,359,318 - Yamamoto , et al. March 19, 2
2002-03-19
Semiconductor device containing a diode
Grant 6,191,466 - Yamashita , et al. February 20, 2
2001-02-20
Semiconductor device and method of manufacturing the same
Grant 5,736,776 - Yamamoto , et al. April 7, 1
1998-04-07

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