| Patent | Date |
|---|
Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners
Grant 10,916,504 - Mukae , et al. February 9, 2 | 2021-02-09 |
Three-dimensional Memory Device Including Electrically Conductive Layers With Molybdenum-containing Liners
App 20200395310 - MUKAE; Yusuke ; et al. | 2020-12-17 |
Three-dimensional memory device containing replacement contact via structures and method of making the same
Grant 10,608,010 - Terasawa , et al. | 2020-03-31 |
Three-dimensional memory device containing offset column stairs and method of making the same
Grant 10,546,870 - Shimabukuro , et al. Ja | 2020-01-28 |
Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings
Grant 10,490,569 - Mushiga , et al. Nov | 2019-11-26 |
Three-dimensional Memory Device Containing Replacement Contact Via Structures And Method Of Making The Same
App 20190280001 - TERASAWA; Yujin ; et al. | 2019-09-12 |
Three-dimensional Memory Device And Method Of Making The Same Using Concurrent Formation Of Memory Openings And Contact Openings
App 20190280003 - Mushiga; Mitsuteru ; et al. | 2019-09-12 |
Three-dimensional Memory Device Containing Offset Column Stairs And Method Of Making The Same
App 20190221574 - SHIMABUKURO; Seiji ; et al. | 2019-07-18 |
Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof
Grant 10,269,620 - Yu , et al. | 2019-04-23 |
Within-array through-memory-level via structures and method of making thereof
Grant 10,249,640 - Yu , et al. | 2019-04-02 |
Three-dimensional Memory Device Containing Support Pillars Underneath A Retro-stepped Dielectric Material And Method Of Making Thereof
App 20180342531 - Susuki; Hiromasa ; et al. | 2018-11-29 |
Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof
Grant 10,141,331 - Susuki , et al. Nov | 2018-11-27 |
Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof
Grant 10,014,316 - Yu , et al. July 3, 2 | 2018-07-03 |
Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device
Grant 10,008,570 - Yu , et al. June 26, 2 | 2018-06-26 |
Bulb-shaped Memory Stack Structures For Direct Source Contact In Three-dimensional Memory Device
App 20180122906 - YU; Jixin ; et al. | 2018-05-03 |
Three-dimensional Memory Device With Leakage Reducing Support Pillar Structures And Method Of Making Thereof
App 20180108671 - YU; Fabo ; et al. | 2018-04-19 |
Within-array Through-memory-level Via Structures And Method Of Making Thereof
App 20170358593 - YU; Jixin ; et al. | 2017-12-14 |
Method of selectively depositing floating gate material in a memory device
Grant 9,768,270 - Gunji-Yoneoka , et al. September 19, 2 | 2017-09-19 |
Multi-tier Memory Device With Through-stack Peripheral Contact Via Structures And Method Of Making Thereof
App 20170236746 - YU; Jixin ; et al. | 2017-08-17 |
Forming 3D memory cells after word line replacement
Grant 9,716,101 - Lu , et al. July 25, 2 | 2017-07-25 |
Blocking oxide in memory opening integration scheme for three-dimensional memory structure
Grant 9,601,508 - Sel , et al. March 21, 2 | 2017-03-21 |
Selective floating gate semiconductor material deposition in a three-dimensional memory structure
Grant 9,553,100 - Kamiya , et al. January 24, 2 | 2017-01-24 |
Memory Hole Last Boxim
App 20160343718 - Lu; Zhenyu ; et al. | 2016-11-24 |
Blocking Oxide In Memory Opening Integration Scheme For Three-dimensional Memory Structure
App 20160315095 - Sel; Jongsun ; et al. | 2016-10-27 |
Selective Floating Gate Semiconductor Material Deposition In A Three-dimensional Memory Structure
App 20160163725 - KAMIYA; Hiroyuki ; et al. | 2016-06-09 |
Bottom Recess Process For An Outer Blocking Dielectric Layer Inside A Memory Opening
App 20160111439 - Tsutsumi; Masanori ; et al. | 2016-04-21 |
Bottom recess process for an outer blocking dielectric layer inside a memory opening
Grant 9,305,937 - Tsutsumi , et al. April 5, 2 | 2016-04-05 |
Method Of Selectively Depositing Floating Gate Material In A Memory Device
App 20150380419 - GUNJI-YONEOKA; Marika ; et al. | 2015-12-31 |
Method For Forming Oxide Below Control Gate In Vertical Channel Thin Film Transistor
App 20150249143 - Sano; Michiaki ; et al. | 2015-09-03 |
Method for drying washed objects
Grant 6,901,685 - Yamaguchi , et al. June 7, 2 | 2005-06-07 |
Method for drying washed objects
App 20040226185 - Yamaguchi, Kensuke ; et al. | 2004-11-18 |
Apparatus and method for drying washed objects
Grant 6,779,534 - Yamaguchi , et al. August 24, 2 | 2004-08-24 |
Apparatus and method for drying washed objects
App 20030168086 - Yamaguchi, Kensuke ; et al. | 2003-09-11 |
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