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Dmos Fet Chip Scale Package And Method Of Making The Same
App 20220278009 - Xue; Yan Xun ; et al. | 2022-09-01 |
Semiconductor Device Incorporating Epitaxial Layer Field Stop Zone
App 20210273046 - Zhang; Lei ; et al. | 2021-09-02 |
Semiconductor device incorporating epitaxial layer field stop zone
Grant 11,031,465 - Zhang , et al. June 8, 2 | 2021-06-08 |
Method for precisely aligning backside pattern to frontside pattern of a semiconductor wafer
Grant 10,833,021 - Zhang , et al. November 10, 2 | 2020-11-10 |
Semiconductor device having one or more titanium interlayers and method of making the same
Grant 10,763,125 - He , et al. Sep | 2020-09-01 |
Reverse conducting IGBT incorporating epitaxial layer field stop zone
Grant 10,686,038 - Xue , et al. | 2020-06-16 |
Self-aligned contact for trench power MOSFET
Grant 10,644,118 - Xue , et al. | 2020-05-05 |
Semiconductor Device Having One Or More Titanium Interlayers And Method Of Making The Same
App 20190385863 - He; Wei ; et al. | 2019-12-19 |
Semiconductor device having one or more titanium interlayers and method of making the same
Grant 10,438,813 - He , et al. O | 2019-10-08 |
Power device with high aspect ratio trench contacts and submicron pitches between trenches
Grant 10,424,654 - Li , et al. Sept | 2019-09-24 |
Semiconductor Device Incorporating Epitaxial Layer Field Stop Zone
App 20190273131 - Zhang; Lei ; et al. | 2019-09-05 |
Semiconductor Device Having One Or More Titanium Interlayers And Method Of Making The Same
App 20190148165 - He; Wei ; et al. | 2019-05-16 |
Reverse Conducting Igbt Incorporating Epitaxial Layer Field Stop Zone
App 20190088745 - Xue; Hongyong ; et al. | 2019-03-21 |
Semiconductor Device Incorporating Epitaxial Layer Field Stop Zone
App 20190006461 - Zhang; Lei ; et al. | 2019-01-03 |
Reverse Conducting Igbt Incorporating Epitaxial Layer Field Stop Zone And Fabrication Method
App 20190006467 - Xue; Hongyong ; et al. | 2019-01-03 |
Method For Precisely Aligning Backside Pattern To Frontside Pattern Of A Semiconductor Wafer
App 20190006285 - Zhang; Lei ; et al. | 2019-01-03 |
Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method
Grant 10,170,559 - Xue , et al. J | 2019-01-01 |
Power Device With High Aspect Ratio Trench Contacts And Submicron Pitches Between Trenches
App 20180323282 - Li; Wenjun ; et al. | 2018-11-08 |
Power device with high aspect ratio trench contacts and submicron pitches between trenches
Grant 10,020,380 - Li , et al. July 10, 2 | 2018-07-10 |
Split-gate trench power mosfet with protected shield oxide
Grant 9,865,694 - Lee , et al. January 9, 2 | 2018-01-09 |
Self-aligned Contact For Trench Power Mosfet
App 20170288028 - Xue; Hongyong ; et al. | 2017-10-05 |
Split-gate trench power MOSFET with protected shield oxide
Grant 9,741,808 - Lee , et al. August 22, 2 | 2017-08-22 |
Self-aligned contact for trench power MOSFET
Grant 9,691,863 - Xue , et al. June 27, 2 | 2017-06-27 |
Split-gate Trench Power Mosfet With Protected Shield Oxide
App 20170133473 - Lee; Yeeheng ; et al. | 2017-05-11 |
Self-aligned Contact For Trench Power Mosfet
App 20160300917 - Xue; Hongyong ; et al. | 2016-10-13 |
Power Device With High Aspect Ratio Trench Contacts And Submicron Pitches Between Trenches
App 20160218008 - Li; Wenjun ; et al. | 2016-07-28 |
Split-gate Trench Power Mosfet With Protected Shield Oxide
App 20160190265 - Lee; Yeeheng ; et al. | 2016-06-30 |
Split-gate trench power MOSFET with protected shield oxide
Grant 9,281,368 - Lee , et al. March 8, 2 | 2016-03-08 |
Multi-step tungsten etchback process to preserve barrier integrity in an integrated circuit structure
Grant 6,872,668 - Cao , et al. March 29, 2 | 2005-03-29 |
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