| Patent | Date |
|---|
Nonmetallic Liner Around A Magnetic Tunnel Junction
App 20220285606 - Li; Tao ; et al. | 2022-09-08 |
VFET device with controllable top spacer
Grant 11,430,864 - Xu , et al. August 30, 2 | 2022-08-30 |
Hybrid-channel Nano-sheet Fets
App 20220157666 - Bi; Zhenxing ; et al. | 2022-05-19 |
Hybrid-channel nano-sheet FETS
Grant 11,276,612 - Bi , et al. March 15, 2 | 2022-03-15 |
3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation
Grant 11,196,001 - Miao , et al. December 7, 2 | 2021-12-07 |
Fin field effect transistor devices with self-aligned gates
Grant 11,183,389 - Xu , et al. November 23, 2 | 2021-11-23 |
Method of forming III-V on insulator structure on semiconductor substrate
Grant 11,164,940 - Cheng , et al. November 2, 2 | 2021-11-02 |
Vertical field effect transistors with self aligned source/drain junctions
Grant 11,107,905 - Miao , et al. August 31, 2 | 2021-08-31 |
Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip
Grant 11,101,181 - Miao , et al. August 24, 2 | 2021-08-24 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
Grant 11,081,400 - Cheng , et al. August 3, 2 | 2021-08-03 |
Fabrication of vertical fin field effect transistors having top air spacers and a self aligned top junction
Grant 11,081,482 - Cheng , et al. August 3, 2 | 2021-08-03 |
Single electron transistor with gap tunnel barriers
Grant 11,069,800 - Cheng , et al. July 20, 2 | 2021-07-20 |
Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors
Grant 11,062,959 - Cheng , et al. July 13, 2 | 2021-07-13 |
Flipped vertical field-effect-transistor
Grant 11,062,965 - Cheng , et al. July 13, 2 | 2021-07-13 |
Non-planar field effect transistor devices with low-resistance metallic gate structures
Grant 11,049,935 - Cheng , et al. June 29, 2 | 2021-06-29 |
Non-planar field effect transistor devices with low-resistance metallic gate structures
Grant 11,038,015 - Cheng , et al. June 15, 2 | 2021-06-15 |
3D ReRAM FORMED BY METAL-ASSISTED CHEMICAL ETCHING WITH REPLACEMENT WORDLINE AND WORDLINE SEPARATION
App 20210159409 - Miao; Xin ; et al. | 2021-05-27 |
Vertical Field-effect Transistor Late Gate Recess Process With Improved Inter-layer Dielectric Protection
App 20210151583 - XU; Wenyu ; et al. | 2021-05-20 |
Nanosheet Transistors With Strained Channel Regions
App 20210151601 - Miao; Xin ; et al. | 2021-05-20 |
Semiconductor wafer having integrated circuits with bottom local interconnects
Grant 11,011,411 - Zhang , et al. May 18, 2 | 2021-05-18 |
Replacement sacrificial nanosheets having improved etch selectivity
Grant 10,991,798 - Xu , et al. April 27, 2 | 2021-04-27 |
Vertical Transistor Devices With Composite High-k And Low-k Spacers With A Controlled Top Junction
App 20210119043 - Cheng; Kangguo ; et al. | 2021-04-22 |
Single Diffusion Break Isolation For Gate-all-around Field-effect Transistor Devices
App 20210118878 - Xu; Wenyu ; et al. | 2021-04-22 |
Vertical field effect transistor replacement metal gate fabrication
Grant 10,985,073 - Xie , et al. April 20, 2 | 2021-04-20 |
Single diffusion break isolation for gate-all-around field-effect transistor devices
Grant 10,985,161 - Xu , et al. April 20, 2 | 2021-04-20 |
High Mobility Complementary Metal-oxide-semiconductor (cmos) Devices With Fins On Insulator
App 20210111195 - Miao; Xin ; et al. | 2021-04-15 |
High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator
Grant 10,971,522 - Miao , et al. April 6, 2 | 2021-04-06 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates
Grant 10,971,585 - Lee , et al. April 6, 2 | 2021-04-06 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
Grant 10,964,601 - Cheng , et al. March 30, 2 | 2021-03-30 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
Grant 10,964,602 - Cheng , et al. March 30, 2 | 2021-03-30 |
Self-aligned fin recesses in nanosheet field effect transistors
Grant 10,957,601 - Bi , et al. March 23, 2 | 2021-03-23 |
Nanosheet transistors with transverse strained channel regions
Grant 10,957,798 - Miao , et al. March 23, 2 | 2021-03-23 |
Fin cut etch process for vertical transistor devices
Grant 10,957,783 - Xu , et al. March 23, 2 | 2021-03-23 |
Self-aligned source/drain contact for vertical field effect transistor
Grant 10,944,013 - Xu , et al. March 9, 2 | 2021-03-09 |
Vertical field-effect transistor late gate recess process with improved inter-layer dielectric protection
Grant 10,937,890 - Xu , et al. March 2, 2 | 2021-03-02 |
Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction
Grant 10,930,778 - Cheng , et al. February 23, 2 | 2021-02-23 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates
Grant 10,930,756 - Bi , et al. February 23, 2 | 2021-02-23 |
Fin field effect transistor devices with modified spacer and gate dielectric thicknesses
Grant 10,910,372 - Miao , et al. February 2, 2 | 2021-02-02 |
Nanosheet with changing SiGe percentage for SiGe lateral recess
Grant 10,910,482 - Cheng , et al. February 2, 2 | 2021-02-02 |
Fin field effect transistor devices with modified spacer and gate dielectric thicknesses
Grant 10,903,212 - Miao , et al. January 26, 2 | 2021-01-26 |
Air gap spacer with wrap-around etch stop layer under gate spacer
Grant 10,903,337 - Zhang , et al. January 26, 2 | 2021-01-26 |
Positioning air-gap spacers in a transistor for improved control of parasitic capacitance
Grant 10,903,331 - Loubet , et al. January 26, 2 | 2021-01-26 |
Vertical fin field effect transistor with reduced gate length variations
Grant 10,903,358 - Zhang , et al. January 26, 2 | 2021-01-26 |
High threshold voltage FET with the same fin height as regular threshold voltage vertical FET
Grant 10,903,123 - Miao , et al. January 26, 2 | 2021-01-26 |
Phase change memory (PCM) with gradual reset characteristics
Grant 10,902,910 - Cheng , et al. January 26, 2 | 2021-01-26 |
Vertical Field Effect Transistor Replacement Metal Gate Fabrication
App 20210013106 - Xie; Ruilong ; et al. | 2021-01-14 |
Single-electron transistor with wrap-around gate
Grant 10,886,391 - Cheng , et al. January 5, 2 | 2021-01-05 |
Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges
Grant 10,886,384 - Cheng , et al. January 5, 2 | 2021-01-05 |
Phase Change Memory (pcm) With Gradual Reset Characteristics
App 20200411087 - Cheng; Kangguo ; et al. | 2020-12-31 |
Single Diffusion Break Isolation For Gate-all-around Field-effect Transistor Devices
App 20200381426 - Xu; Wenyu ; et al. | 2020-12-03 |
Selectively formed gate sidewall spacer
Grant 10,833,176 - Cheng , et al. November 10, 2 | 2020-11-10 |
III-V segmented finFET free of wafer bonding
Grant 10,833,158 - Miao , et al. November 10, 2 | 2020-11-10 |
Vertical field effect transistor with uniform gate length
Grant 10,811,495 - Cheng , et al. October 20, 2 | 2020-10-20 |
Stacked Vertical Transport Field Effect Transistors With Anchors
App 20200328206 - Zhang; Chen ; et al. | 2020-10-15 |
Vertical Field-effect Transistor Late Gate Recess Process With Improved Inter-layer Dielectric Protection
App 20200321448 - XU; Wenyu ; et al. | 2020-10-08 |
Vertical field effect transistor (FET) with controllable gate length
Grant 10,796,967 - Cheng , et al. October 6, 2 | 2020-10-06 |
Positioning Air-gap Spacers In A Transistor For Improved Control Of Parasitic Capacitance
App 20200312977 - Loubet; Nicolas ; et al. | 2020-10-01 |
Semiconductor Wafer Having Integrated Circuits With Bottom Local Interconnects
App 20200303244 - Zhang; Chen ; et al. | 2020-09-24 |
Nanosheet with changing SiGe pecentage for SiGe lateral recess
Grant 10,784,364 - Cheng , et al. Sept | 2020-09-22 |
Fin Field Effect Transistor Devices With Self-aligned Gates
App 20200294803 - Xu; Wenyu ; et al. | 2020-09-17 |
Hybrid high mobility channel transistors
Grant 10,741,557 - Miao , et al. A | 2020-08-11 |
Nanosheet Transistors With Strained Channel Regions
App 20200251593 - Kind Code | 2020-08-06 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
Grant 10,734,287 - Cheng , et al. | 2020-08-04 |
Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance
Grant 10,734,501 - Miao , et al. | 2020-08-04 |
Replacement Sacrificial Nanosheets Having Improved Etch Selectivity
App 20200235206 - Xu; Wenyu ; et al. | 2020-07-23 |
Powder Sintering Device For Moderator
App 20200188695 - LIU; Yuan-hao ; et al. | 2020-06-18 |
Flipped Vertical Field-effect-transistor
App 20200176335 - CHENG; Kangguo ; et al. | 2020-06-04 |
Method Of Forming Iii-v On Insulator Structure On Semiconductor Substrate
App 20200176558 - CHENG; KANGGUO ; et al. | 2020-06-04 |
Vertical transistors having improved gate length control
Grant 10,672,888 - Cheng , et al. | 2020-06-02 |
Fabrication Of A Pair Of Vertical Fin Field Effect Transistors Having A Merged Top Source/drain
App 20200168510 - Cheng; Kangguo ; et al. | 2020-05-28 |
Fabrication Of A Pair Of Vertical Fin Field Effect Transistors Having A Merged Top Source/drain
App 20200168511 - Cheng; Kangguo ; et al. | 2020-05-28 |
Fabrication Of A Pair Of Vertical Fin Field Effect Transistors Having A Merged Top Source/drain
App 20200168512 - Cheng; Kangguo ; et al. | 2020-05-28 |
VFET Device with Controllable Top Spacer
App 20200168702 - Xu; Wenyu ; et al. | 2020-05-28 |
Vertical transistors having improved gate length control
Grant 10,665,694 - Cheng , et al. | 2020-05-26 |
Method of forming III-V on insulator structure on semiconductor substrate
Grant 10,665,666 - Cheng , et al. | 2020-05-26 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates
Grant 10,658,493 - Bi , et al. | 2020-05-19 |
Gate Spacer And Inner Spacer Formation For Nanosheet Transistors Having Relatively Small Space Between Gates
App 20200152764 - Bi; Zhenxing ; et al. | 2020-05-14 |
Junction Formation In Thick-oxide And Thin-oxide Vertical Fets On The Same Chip
App 20200152517 - Miao; Xin ; et al. | 2020-05-14 |
Tunnel Field-effect Transistor With Reduced Subthreshold Swing
App 20200152789 - Miao; Xin ; et al. | 2020-05-14 |
Tunnel Field-effect Transistor With Reduced Subthreshold Swing
App 20200152790 - Miao; Xin ; et al. | 2020-05-14 |
Tunnel field-effect transistor with reduced subthreshold swing
Grant 10,644,150 - Miao , et al. | 2020-05-05 |
Vertical transport field effect transistor on silicon with defined junctions
Grant 10,636,895 - Zhang , et al. | 2020-04-28 |
Self-aligned Fin Recesses In Nanosheet Field Effect Transistors
App 20200118881 - Bi; Zhenxing ; et al. | 2020-04-16 |
Vertical Transistor Devices With Composite High-k And Low-k Spacers With A Controlled Top Junction
App 20200119190 - Cheng; Kangguo ; et al. | 2020-04-16 |
Beam shaping assembly for neutron capture therapy
Grant 10,617,893 - Liu , et al. | 2020-04-14 |
Nanosheet devices with different types of work function metals
Grant 10,622,264 - Cheng , et al. | 2020-04-14 |
FinFETs with controllable and adjustable channel doping
Grant 10,622,354 - Cheng , et al. | 2020-04-14 |
Formation of a semiconductor device with RIE-free spacers
Grant 10,622,454 - Cheng , et al. | 2020-04-14 |
Nanosheet semiconductor structure with inner spacer formed by oxidation
Grant 10,615,258 - Miao , et al. | 2020-04-07 |
Nanosheet transistor gate structure having reduced parasitic capacitance
Grant 10,615,256 - Cheng , et al. | 2020-04-07 |
Semiconductor device strain relaxation buffer layer
Grant 10,615,267 - Cheng , et al. | 2020-04-07 |
Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip
Grant 10,607,892 - Miao , et al. | 2020-03-31 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
Grant 10,607,894 - Cheng , et al. | 2020-03-31 |
Non-planar field effect transistor devices with low-resistance metallic gate structures
Grant 10,608,083 - Cheng , et al. | 2020-03-31 |
Hybrid-channel Nano-sheet Fets
App 20200098642 - Bi; Zhenxing ; et al. | 2020-03-26 |
Vertical field effect transistors with bottom source/drain epitaxy
Grant 10,600,886 - Cheng , et al. | 2020-03-24 |
Vertical Fin Field Effect Transistor With A Reduced Gate-to-bottom Source/drain Parasitic Capacitance
App 20200091316 - Zhang; Chen ; et al. | 2020-03-19 |
Analog-based multiple-bit chip security
Grant 10,592,698 - Cheng , et al. | 2020-03-17 |
Vertical field effect transistor (VFET) device with controllable top spacer
Grant 10,593,753 - Xu , et al. | 2020-03-17 |
Fabrication Of A Vertical Transistor With Self-aligned Bottom Source/drain
App 20200083106 - Cheng; Kangguo ; et al. | 2020-03-12 |
Vertical Fin Field Effect Transistor With A Reduced Gate-to-bottom Source/drain Parasitic Capacitance
App 20200083353 - Zhang; Chen ; et al. | 2020-03-12 |
Fabrication Of Vertical Fin Field Effect Transistors Having Top Air Spacers And A Self-aligned Top Junction
App 20200083217 - Cheng; Kangguo ; et al. | 2020-03-12 |
Fin Cut Etch Process For Vertical Transistor Devices
App 20200083355 - Xu; Wenyu ; et al. | 2020-03-12 |
Nanosheet FET device with epitaxial nucleation
Grant 10,586,856 - Loubet , et al. | 2020-03-10 |
Non-planar Field Effect Transistor Devices With Low-resistance Metallic Gate Structures
App 20200075717 - Cheng; Kangguo ; et al. | 2020-03-05 |
Fin Field Effect Transistor Devices With Modified Spacer And Gate Dielectric Thicknesses
App 20200075589 - Miao; Xin ; et al. | 2020-03-05 |
Non-planar Field Effect Transistor Devices With Low-resistance Metallic Gate Structures
App 20200075719 - Cheng; Kangguo ; et al. | 2020-03-05 |
Self-aligned Source/drain Contact For Vertical Field Effect Transistor
App 20200075775 - Xu; Wenyu ; et al. | 2020-03-05 |
Fin Field Effect Transistor Devices With Modified Spacer And Gate Dielectric Thicknesses
App 20200075587 - Miao; Xin ; et al. | 2020-03-05 |
Non-planar Field Effect Transistor Devices With Low-resistance Metallice Gate Structures
App 20200075720 - Cheng; Kangguo ; et al. | 2020-03-05 |
Flipped vertical field-effect-transistor
Grant 10,580,709 - Cheng , et al. | 2020-03-03 |
High Mobility Complementary Metal-oxide-semiconductor (cmos) Devices With Fins On Insulator
App 20200066896 - Miao; Xin ; et al. | 2020-02-27 |
Metal Gate Structure To Reduce Transistor Gate Resistance
App 20200058764 - Miao; Xin ; et al. | 2020-02-20 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates
Grant 10,566,445 - Bi , et al. Feb | 2020-02-18 |
Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance
Grant 10,566,444 - Zhang , et al. Feb | 2020-02-18 |
Vertical Field Effect Transistors With Self Aligned Source/drain Junctions
App 20200052095 - Miao; Xin ; et al. | 2020-02-13 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
Grant 10,559,502 - Cheng , et al. Feb | 2020-02-11 |
High mobility semiconductor fins on insulator
Grant 10,559,504 - Cheng , et al. Feb | 2020-02-11 |
Vertical Field Effect Transistors With Self Aligned Source/drain Junctions
App 20200044056 - Miao; Xin ; et al. | 2020-02-06 |
Fabrication of a vertical transistor with self-aligned bottom source/drain
Grant 10,553,493 - Cheng , et al. Fe | 2020-02-04 |
Beam Shaping Assembly For Neutron Capture Therapy
App 20200023205 - LIU; Yuan-hao ; et al. | 2020-01-23 |
Vertical Field Effect Transistor (vfet)device With Controllable Top Spacer
App 20200020767 - Xu; Wenyu ; et al. | 2020-01-16 |
Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction
Grant 10,535,652 - Cheng , et al. Ja | 2020-01-14 |
High Threshold Voltage Fet With The Same Fin Height As Regular Threshold Voltage Vertical Fet
App 20200013677 - MIAO; Xin ; et al. | 2020-01-09 |
Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers
Grant 10,529,823 - Miao , et al. J | 2020-01-07 |
Fin field effect transistor devices with modified spacer and gate dielectric thicknesses
Grant 10,529,713 - Miao , et al. J | 2020-01-07 |
Iii-v Segmented Finfet Free Of Wafer Bonding
App 20200006485 - Miao; Xin ; et al. | 2020-01-02 |
Nanosheet Transistor Gate Structure Having Reduced Parasitic Capacitance
App 20200006477 - Cheng; Kangguo ; et al. | 2020-01-02 |
Nanosheet Fet Device With Epitaxial Nucleation
App 20190386113 - Loubet; Nicolas ; et al. | 2019-12-19 |
Fin Field Effect Transistor Devices With Modified Spacer And Gate Dielectric Thicknesses
App 20190378837 - Miao; Xin ; et al. | 2019-12-12 |
Hybrid-channel nano-sheet FETs
Grant 10,504,793 - Bi , et al. Dec | 2019-12-10 |
Vertical field effect transistors with self aligned source/drain junctions
Grant 10,505,019 - Miao , et al. Dec | 2019-12-10 |
Self-aligned source/drain contact for vertical field effect transistor
Grant 10,505,048 - Xu , et al. Dec | 2019-12-10 |
Method Of Manufacturing A Semiconductor Device Having An Inverted T-shaped Metal Gate Between Inner Spacers
App 20190371913 - Miao; Xin ; et al. | 2019-12-05 |
Tunnel Field-effect Transistor With Reduced Subthreshold Swing
App 20190371911 - Miao; Xin ; et al. | 2019-12-05 |
Dummy dielectric fins for finFETs with silicon and silicon germanium channels
Grant 10,497,799 - Cheng , et al. De | 2019-12-03 |
Hybrid High Mobility Channel Transistors
App 20190363083 - MIAO; Xin ; et al. | 2019-11-28 |
High threshold voltage FET with the same fin height as regular threshold voltage vertical FET
Grant 10,490,453 - Miao , et al. Nov | 2019-11-26 |
Vertical Field Effect Transistors With Self Aligned Source/drain Junctions
App 20190355833 - Miao; Xin ; et al. | 2019-11-21 |
Vertical Transport Field Effect Transistor On Silicon With Defined Junctions
App 20190355834 - Zhang; Chen ; et al. | 2019-11-21 |
Fin cut etch process for vertical transistor devices
Grant 10,483,375 - Xu , et al. Nov | 2019-11-19 |
Gate Spacer And Inner Spacer Formation For Nanosheet Transistors Having Relatively Small Space Between Adjacent Gates
App 20190341450 - Lee; Choonghyun ; et al. | 2019-11-07 |
Iii-v-segmented Finfet Free Of Wafer Bonding
App 20190341452 - MIAO; Xin ; et al. | 2019-11-07 |
Gate Spacer And Inner Spacer Formation For Nanosheet Transistors Having Relatively Small Space Between Gates
App 20190341465 - Bi; Zhenxing ; et al. | 2019-11-07 |
Vertical field effect transistor with improved reliability
Grant 10,468,524 - Cheng , et al. No | 2019-11-05 |
High Threshold Voltage Fet With The Same Fin Height As Regular Threshold Voltage Vertical Fet
App 20190318963 - MIAO; Xin ; et al. | 2019-10-17 |
Vertical Transistors Having Improved Control Of Parasitic Capacitance And Source/drain-to-channel Resistance
App 20190319099 - Cheng; Kangguo ; et al. | 2019-10-17 |
Vertical Fin Field Effect Transistor With Reduced Gate Length Variations
App 20190312140 - Zhang; Chen ; et al. | 2019-10-10 |
Vertical FET with reduced parasitic capacitance
Grant 10,438,949 - Cheng , et al. O | 2019-10-08 |
Nanosheet Devices With Different Types Of Work Function Metals
App 20190304848 - Cheng; Kangguo ; et al. | 2019-10-03 |
Gate Spacer And Inner Spacer Formation For Nanosheet Transistors Having Relatively Small Space Between Gates
App 20190305106 - Bi; Zhenxing ; et al. | 2019-10-03 |
Fabrication of a vertical fin field effect transistor with a reduced contact resistance
Grant 10,431,659 - Cheng , et al. O | 2019-10-01 |
Nanosheet transistor with high-mobility channel
Grant 10,424,639 - Miao , et al. Sept | 2019-09-24 |
Vertical transport field effect transistor on silicon with defined junctions
Grant 10,424,653 - Zhang , et al. Sept | 2019-09-24 |
Single-electron Transistor With Wrap-around Gate
App 20190288097 - Cheng; Kangguo ; et al. | 2019-09-19 |
Inner Spacer And Junction Formation For Integrating Extended-gate And Standard-gate Nanosheet Transistors
App 20190287864 - Cheng; Kangguo ; et al. | 2019-09-19 |
Air Gap Spacer With Wrap-around Etch Stop Layer Under Gate Spacer
App 20190280099 - Zhang; Chen ; et al. | 2019-09-12 |
Air gap spacer with wrap-around etch stop layer under gate spacer
Grant 10,411,114 - Zhang , et al. Sept | 2019-09-10 |
Finfets With Controllable And Adjustable Channel Doping
App 20190259752 - Cheng; Kangguo ; et al. | 2019-08-22 |
High Mobility Semiconductor Fins On Insulator
App 20190259672 - Cheng; Kangguo ; et al. | 2019-08-22 |
Nanosheet devices with different types of work function metals
Grant 10,388,577 - Cheng , et al. A | 2019-08-20 |
Method and structure for forming improved single electron transistor with gap tunnel barriers
Grant 10,381,468 - Cheng , et al. A | 2019-08-13 |
Single electron transistor with wrap-around gate
Grant 10,374,073 - Cheng , et al. | 2019-08-06 |
Vertical fin field effect transistor with reduced gate length variations
Grant 10,374,083 - Zhang , et al. | 2019-08-06 |
Air Gap Spacer With Controlled Air Gap Height
App 20190237560 - Cheng; Kangguo ; et al. | 2019-08-01 |
Air gap spacer with controlled air gap height
Grant 10,367,076 - Cheng , et al. July 30, 2 | 2019-07-30 |
FinFETs with controllable and adjustable channel doping
Grant 10,361,197 - Cheng , et al. | 2019-07-23 |
Vertical fin field effect transistor with integral U-shaped electrical gate connection
Grant 10,361,200 - Xu , et al. | 2019-07-23 |
Vertical Fin Field Effect Transistor With Reduced Gate Length Variations
App 20190221667 - Zhang; Chen ; et al. | 2019-07-18 |
Radiation sensor, method of forming the sensor and device including the sensor
Grant 10,347,784 - Cheng , et al. July 9, 2 | 2019-07-09 |
H-shaped VFET with increased current drivability
Grant 10,340,364 - Zhang , et al. | 2019-07-02 |
Vertical Fin Field Effect Transistor With A Reduced Gate-to-bottom Source/drain Parasitic Capacitance
App 20190198641 - Zhang; Chen ; et al. | 2019-06-27 |
Junction Formation In Thick-oxide And Thin-oxide Vertical Fets On The Same Chip
App 20190198400 - Miao; Xin ; et al. | 2019-06-27 |
Air Gap Spacer With Wrap-around Etch Stop Layer Under Gate Spacer
App 20190198635 - Zhang; Chen ; et al. | 2019-06-27 |
Vertical field effect transistor having U-shaped top spacer
Grant 10,332,800 - Cheng , et al. | 2019-06-25 |
Nanosheet semiconductor structure with inner spacer formed by oxidation
Grant 10,332,962 - Miao , et al. | 2019-06-25 |
Hybrid-channel nano-sheets FETs
Grant 10,332,802 - Bi , et al. | 2019-06-25 |
Beam shaping assembly for neutron capture therapy
Grant 10,328,286 - Liu , et al. | 2019-06-25 |
NANOSHEET WITH CHANGING SiGe PECENTAGE FOR SiGe LATERAL RECESS
App 20190189781 - Cheng; Kangguo ; et al. | 2019-06-20 |
Nanosheet Semiconductor Structure With Inner Spacer Formed By Oxidation
App 20190189741 - Miao; Xin ; et al. | 2019-06-20 |
Method And Structure For Forming Improved Single Electron Transistor With Gap Tunnel Barriers
App 20190189790 - Cheng; Kangguo ; et al. | 2019-06-20 |
NANOSHEET WITH CHANGING SiGe PECENTAGE FOR SiGe LATERAL RECESS
App 20190189780 - Cheng; Kangguo ; et al. | 2019-06-20 |
Field effect transistor air-gap spacers with an etch-stop layer
Grant 10,325,995 - Cheng , et al. | 2019-06-18 |
Method Of Forming Iii-v On Insulator Structure On Semiconductor Substrate
App 20190181220 - Cheng; Kangguo ; et al. | 2019-06-13 |
Vertical Fet With Reduced Parasitic Capacitance
App 20190181139 - Cheng; Kangguo ; et al. | 2019-06-13 |
Nanosheet with changing SiGe percentage for SiGe lateral recess
Grant 10,312,350 - Cheng , et al. | 2019-06-04 |
NANOSHEET WITH CHANGING SiGe PERCENTAGE FOR SiGe LATERAL RECESS
App 20190165135 - Cheng; Kangguo ; et al. | 2019-05-30 |
Self-aligned contact
Grant 10,304,736 - Cheng , et al. | 2019-05-28 |
Finfets With Controllable And Adjustable Channel Doping
App 20190157267 - Cheng; Kangguo ; et al. | 2019-05-23 |
Vertical field effect transistor with improved reliability
Grant 10,297,688 - Cheng , et al. | 2019-05-21 |
H-shaped Vfet With Increased Current Drivability
App 20190148516 - Zhang; Chen ; et al. | 2019-05-16 |
Vertical Field Effect Transistor (fet) With Controllable Gate Length
App 20190139833 - Cheng; Kangguo ; et al. | 2019-05-09 |
Vertical FET with reduced parasitic capacitance
Grant 10,283,504 - Cheng , et al. | 2019-05-07 |
Vertical Field Effect Transistor Having U-shaped Top Spacer
App 20190122935 - Cheng; Kangguo ; et al. | 2019-04-25 |
Nanosheet Semiconductor Structure With Inner Spacer Formed By Oxidation
App 20190109191 - Miao; Xin ; et al. | 2019-04-11 |
Dummy dielectric fins for finFETs with silicon and silicon germanium channels
Grant 10,256,328 - Cheng , et al. | 2019-04-09 |
Flipped Vertical Field-effect-transistor
App 20190096775 - CHENG; Kangguo ; et al. | 2019-03-28 |
Flipped vertical field-effect-transistor
Grant 10,242,986 - Cheng , et al. | 2019-03-26 |
Fabrication of a vertical fin field effect transistor with a reduced contact resistance
Grant 10,236,355 - Cheng , et al. | 2019-03-19 |
Vertical transistor with variable gate length
Grant 10,236,214 - Cheng , et al. | 2019-03-19 |
Vertical Field Effect Transistors With Bottom Source/drain Epitaxy
App 20190081157 - CHENG; Kangguo ; et al. | 2019-03-14 |
Integration of thick and thin nanosheet transistors on a single chip
Grant 10,229,971 - Cheng , et al. | 2019-03-12 |
Vertical field effect transistors with bottom source/drain epitaxy
Grant 10,217,845 - Cheng , et al. Feb | 2019-02-26 |
Vertical Transistors Having Improved Gate Length Control
App 20190058046 - Cheng; Kangguo ; et al. | 2019-02-21 |
Vertical Transistors Having Improved Gate Length Control
App 20190058047 - Cheng; Kangguo ; et al. | 2019-02-21 |
Vertical field effect transistor (FET) with controllable gate length
Grant 10,199,278 - Cheng , et al. Fe | 2019-02-05 |
Field Effect Transistor Air-gap Spacers With An Etch-stop Layer
App 20190013390 - Cheng; Kangguo ; et al. | 2019-01-10 |
Direct gate patterning for vertical transport field effect transistor
Grant 10,176,997 - De Silva , et al. J | 2019-01-08 |
Vertical FET with different channel orientations for NFET and PFET
Grant 10,177,046 - Cheng , et al. J | 2019-01-08 |
Fabrication Of A Vertical Fin Field Effect Transistor (vertical Finfet) With A Self-aligned Gate And Fin Edges
App 20180374933 - Cheng; Kangguo ; et al. | 2018-12-27 |
Vertical FET with selective atomic layer deposition gate
Grant 10,164,055 - Cheng , et al. Dec | 2018-12-25 |
Gate length controlled vertical FETs
Grant 10,153,367 - Cheng , et al. Dec | 2018-12-11 |
Fabrication Of A Vertical Transistor With Self-aligned Bottom Source/drain
App 20180350691 - Cheng; Kangguo ; et al. | 2018-12-06 |
Vertical Field Effect Transistor (fet) With Controllable Gate Length
App 20180350695 - Cheng; Kangguo ; et al. | 2018-12-06 |
Flipped vertical field-effect-transistor
Grant 10,141,234 - Cheng , et al. Nov | 2018-11-27 |
Vertical FETs with different gate lengths and spacer thicknesses
Grant 10,141,448 - Miao , et al. Nov | 2018-11-27 |
Vertical field effect transistors with bottom source/drain epitaxy
Grant 10,134,874 - Cheng , et al. November 20, 2 | 2018-11-20 |
Field effect transistor air-gap spacers with an etch-stop layer
Grant 10,134,866 - Cheng , et al. November 20, 2 | 2018-11-20 |
Vertical FET with selective atomic layer deposition gate
Grant 10,109,491 - Cheng , et al. October 23, 2 | 2018-10-23 |
Vertical Fet With Reduced Parasitic Capacitance
App 20180301451 - Cheng; Kangguo ; et al. | 2018-10-18 |
Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges
Grant 10,103,246 - Cheng , et al. October 16, 2 | 2018-10-16 |
Method And Structure For Forming Improved Single Electron Transistor With Gap Tunnel Barriers
App 20180277669 - Cheng; Kangguo ; et al. | 2018-09-27 |
Vertical Field Effect Transistor With Improved Reliability
App 20180277674 - Cheng; Kangguo ; et al. | 2018-09-27 |
Vertical Field Effect Transistor With Improved Reliability
App 20180277675 - Cheng; Kangguo ; et al. | 2018-09-27 |
Fabrication of a vertical transistor with self-aligned bottom source/drain
Grant 10,083,871 - Cheng , et al. September 25, 2 | 2018-09-25 |
Field Effect Transistor Air-gap Spacers With An Etch-stop Layer
App 20180269301 - Cheng; Kangguo ; et al. | 2018-09-20 |
Vertical FET with reduced parasitic capacitance
Grant 10,074,652 - Cheng , et al. September 11, 2 | 2018-09-11 |
Analog-based Multiple-bit Chip Security
App 20180253568 - Cheng; Kangguo ; et al. | 2018-09-06 |
Forming Nanosheet Transistors With Differing Characteristics
App 20180254322 - Cheng; Kangguo ; et al. | 2018-09-06 |
Self-aligned contact
Grant 10,068,799 - Cheng , et al. September 4, 2 | 2018-09-04 |
Vertical Fet With Different Channel Orientations For Nfet And Pfet
App 20180240716 - Cheng; Kangguo ; et al. | 2018-08-23 |
Radiation Sensor, Method Of Forming The Sensor And Device Including The Sensor
App 20180240929 - Cheng; Kangguo ; et al. | 2018-08-23 |
Flipped Vertical Field-effect-transistor
App 20180219011 - CHENG; Kangguo ; et al. | 2018-08-02 |
Vertical Field Effect Transistor Having U-shaped Top Spacer
App 20180211883 - Cheng; Kangguo ; et al. | 2018-07-26 |
Vertical field effect transistor having U-shaped top spacer
Grant 10,032,676 - Cheng , et al. July 24, 2 | 2018-07-24 |
Radiation sensor, method of forming the sensor and device including the sensor
Grant 10,020,416 - Cheng , et al. July 10, 2 | 2018-07-10 |
Hybrid-channel Nano-sheet Fets
App 20180190545 - Bi; Zhenxing ; et al. | 2018-07-05 |
Hybrid-channel Nano-sheet Fets
App 20180190544 - Bi; Zhenxing ; et al. | 2018-07-05 |
Forming Nanosheet Transistors With Differing Characteristics
App 20180182848 - Cheng; Kangguo ; et al. | 2018-06-28 |
Top contact resistance measurement in vertical FETs
Grant 10,002,809 - Cheng , et al. June 19, 2 | 2018-06-19 |
Flipped vertical field-effect-transistor
Grant 10,002,803 - Cheng , et al. June 19, 2 | 2018-06-19 |
Vertical single electron transistor formed by condensation
Grant 9,997,597 - Cheng , et al. June 12, 2 | 2018-06-12 |
Top contact resistance measurement in vertical FETS
Grant 9,997,421 - Cheng , et al. June 12, 2 | 2018-06-12 |
Hybrid-channel nano-sheet FETs
Grant 9,972,542 - Bi , et al. May 15, 2 | 2018-05-15 |
Vertical field effect transistors with bottom source/drain epitaxy
Grant 9,972,700 - Cheng , et al. May 15, 2 | 2018-05-15 |
Fabrication Of A Pair Of Vertical Fin Field Effect Transistors Having A Merged Top Source/drain
App 20180122936 - Cheng; Kangguo ; et al. | 2018-05-03 |
Fabrication Of A Pair Of Vertical Fin Field Effect Transistors Having A Merged Top Source/drain
App 20180122706 - Cheng; Kangguo ; et al. | 2018-05-03 |
Flipped Vertical Field-effect-transistor
App 20180122714 - CHENG; Kangguo ; et al. | 2018-05-03 |
Fabrication Of Vertical Fin Field Effect Transistors Having Top Air Spacers And A Self-aligned Top Junction
App 20180122800 - Cheng; Kangguo ; et al. | 2018-05-03 |
Fabrication Of A Pair Of Vertical Fin Field Effect Transistors Having A Merged Top Source/drain
App 20180122938 - Cheng; Kangguo ; et al. | 2018-05-03 |
Flipped vertical field-effect-transistor
Grant 9,960,164 - Cheng , et al. May 1, 2 | 2018-05-01 |
Vertical Field Effect Transistors With Bottom Source/drain Epitaxy
App 20180114849 - CHENG; Kangguo ; et al. | 2018-04-26 |
Finfets With Controllable And Adjustable Channel Doping
App 20180102362 - Cheng; Kangguo ; et al. | 2018-04-12 |
Vertical field effect transistor with uniform gate length
Grant 9,935,101 - Cheng , et al. April 3, 2 | 2018-04-03 |
Selectively Formed Gate Sidewall Spacer
App 20180076305 - Cheng; Kangguo ; et al. | 2018-03-15 |
Vertical Field Effect Transistor With Uniform Gate Length
App 20180061829 - Cheng; Kangguo ; et al. | 2018-03-01 |
Forming Nanosheet Transistors With Differing Characteristics
App 20180061944 - Cheng; Kangguo ; et al. | 2018-03-01 |
Fabrication of a vertical fin field effect transistor with a reduced contact resistance
Grant 9,905,663 - Cheng , et al. February 27, 2 | 2018-02-27 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
Grant 9,899,515 - Cheng , et al. February 20, 2 | 2018-02-20 |
Vertical Field Effect Transistor With Uniform Gate Length
App 20180033788 - Cheng; Kangguo ; et al. | 2018-02-01 |
Vertical Field Effect Transistors With Bottom Source/drain Epitaxy
App 20180033869 - CHENG; Kangguo ; et al. | 2018-02-01 |
Top Contact Resistance Measurement In Vertical Fets
App 20180025954 - Cheng; Kangguo ; et al. | 2018-01-25 |
Top Contact Resistance Measurement In Vertical Fets
App 20180025950 - Cheng; Kangguo ; et al. | 2018-01-25 |
Selectively formed gate sidewall spacer
Grant 9,876,097 - Cheng , et al. January 23, 2 | 2018-01-23 |
Gate Length Controlled Vertical Fets
App 20180012993 - Cheng; Kangguo ; et al. | 2018-01-11 |
Fabrication Of A Vertical Fin Field Effect Transistor With A Reduced Contact Resistance
App 20180012969 - Cheng; Kangguo ; et al. | 2018-01-11 |
Vertical field effect transistors with bottom source/drain epitaxy
Grant 9,865,705 - Cheng , et al. January 9, 2 | 2018-01-09 |
Beam Shaping Assembly For Neutron Capture Therapy
App 20180001112 - LIU; Yuan-hao ; et al. | 2018-01-04 |
Vertical Transistor With Variable Gate Length
App 20180005895 - CHENG; KANGGUO ; et al. | 2018-01-04 |
Formation Of A Semiconductor Device With Rie-free Spacers
App 20180006030 - Cheng; Kangguo ; et al. | 2018-01-04 |
Radiation Sensor, Method of Forming the Sensor and Device Including the Sensor
App 20180006181 - CHENG; Kangguo ; et al. | 2018-01-04 |
Vertical field effect transistor having U-shaped top spacer
Grant 9,859,166 - Cheng , et al. January 2, 2 | 2018-01-02 |
Single-electron transistor with wrap-around gate
Grant 9,859,409 - Cheng , et al. January 2, 2 | 2018-01-02 |
Sidewall protective layer for contact formation
Grant 9,859,389 - Cheng , et al. January 2, 2 | 2018-01-02 |
Self-aligned Contact
App 20170372956 - Cheng; Kangguo ; et al. | 2017-12-28 |
Fabrication Of A Vertical Fin Field Effect Transistor With A Reduced Contact Resistance
App 20170373162 - Cheng; Kangguo ; et al. | 2017-12-28 |
Sidewall Protective Layer For Contact Formation
App 20170373160 - CHENG; KANGGUO ; et al. | 2017-12-28 |
Fabrication Of A Vertical Fin Field Effect Transistor With A Reduced Contact Resistance
App 20170373159 - Cheng; Kangguo ; et al. | 2017-12-28 |
Self-aligned Contact
App 20170372957 - Cheng; Kangguo ; et al. | 2017-12-28 |
Vertical FET with reduced parasitic capacitance
Grant 9,853,028 - Cheng , et al. December 26, 2 | 2017-12-26 |
Vertical Single Electron Transistor Formed By Condensation
App 20170365662 - Cheng; Kangguo ; et al. | 2017-12-21 |
Fabrication Of A Vertical Transistor With Self-aligned Bottom Source/drain
App 20170358497 - Cheng; Kangguo ; et al. | 2017-12-14 |
Fabrication Of A Vertical Fin Field Effect Transistor (vertical Finfet) With A Self-aligned Gate And Fin Edges
App 20170358660 - Cheng; Kangguo ; et al. | 2017-12-14 |
Selectively Formed Gate Sidewall Spacer
App 20170358664 - Cheng; Kangguo ; et al. | 2017-12-14 |
Vertical Field Effect Transistors With Bottom Source/drain Epitaxy
App 20170352743 - CHENG; Kangguo ; et al. | 2017-12-07 |
Vertical Field Effect Transistors With Bottom Source/drain Epitaxy
App 20170352742 - CHENG; Kangguo ; et al. | 2017-12-07 |
Integration of vertical transistors with 3D long channel transistors
Grant 9,837,409 - Cheng , et al. December 5, 2 | 2017-12-05 |
Dummy Dielectric Fins For Finfets With Silicon And Silicon Germanium Channels
App 20170338322 - Cheng; Kangguo ; et al. | 2017-11-23 |
Dummy Dielectric Fins For Finfets With Silicon And Silicon Germanium Channels
App 20170338323 - Cheng; Kangguo ; et al. | 2017-11-23 |
Single-electron Transistor With Wrap-around Gate
App 20170317201 - Cheng; Kangguo ; et al. | 2017-11-02 |
Single-electron Transistor With Wrap-around Gate
App 20170317200 - Cheng; Kangguo ; et al. | 2017-11-02 |
Integration Of Vertical Transistors With 3d Long Channel Transistors
App 20170317080 - Cheng; Kangguo ; et al. | 2017-11-02 |
Flipped Vertical Field-effect-transistor
App 20170309630 - CHENG; Kangguo ; et al. | 2017-10-26 |
Flipped Vertical Field-effect-transistor
App 20170309527 - CHENG; Kangguo ; et al. | 2017-10-26 |
Flipped Vertical Field-effect-transistor
App 20170309631 - CHENG; Kangguo ; et al. | 2017-10-26 |
Flipped vertical field-effect-transistor
Grant 9,799,655 - Cheng , et al. October 24, 2 | 2017-10-24 |
Vertical single electron transistor formed by condensation
Grant 9,793,349 - Cheng , et al. October 17, 2 | 2017-10-17 |
Vertical Single Electron Transistor Formed By Condensation
App 20170294509 - Cheng; Kangguo ; et al. | 2017-10-12 |
Top contact resistance measurement in vertical FETs
Grant 9,768,085 - Cheng , et al. September 19, 2 | 2017-09-19 |
Semiconductor Device Strain Relaxation Buffer Layer
App 20170263731 - Cheng; Kangguo ; et al. | 2017-09-14 |
Semiconductor Device Strain Relaxation Buffer Layer
App 20170263772 - Cheng; Kangguo ; et al. | 2017-09-14 |
Vertical FET with selective atomic layer deposition gate
Grant 9,761,694 - Cheng , et al. September 12, 2 | 2017-09-12 |
Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same
Grant 9,761,728 - Cheng , et al. September 12, 2 | 2017-09-12 |
FinFETs with controllable and adjustable channel doping
Grant 9,741,717 - Cheng , et al. August 22, 2 | 2017-08-22 |
Vertical field effect transistors with bottom contact metal directly beneath fins
Grant 9,721,845 - Cheng , et al. August 1, 2 | 2017-08-01 |
Radiation sensor, method of forming the sensor and device including the sensor
Grant 9,722,125 - Cheng , et al. August 1, 2 | 2017-08-01 |
Vertical Fet With Selective Atomic Layer Deposition Gate
App 20170213900 - Cheng; Kangguo ; et al. | 2017-07-27 |
Vertical Fet With Selective Atomic Layer Deposition Gate
App 20170213737 - Cheng; Kangguo ; et al. | 2017-07-27 |
Vertical Fet With Selective Atomic Layer Deposition Gate
App 20170213899 - Cheng; Kangguo ; et al. | 2017-07-27 |
Fin reveal last for finfet
Grant 9,698,251 - Cheng , et al. July 4, 2 | 2017-07-04 |
Semiconductor device strain relaxation buffer layer
Grant 9,698,266 - Cheng , et al. July 4, 2 | 2017-07-04 |
Tensile and compressive fins for vertical field effect transistors
Grant 9,653,602 - Cheng , et al. May 16, 2 | 2017-05-16 |
Integrated device with P-I-N diodes and vertical field effect transistors
Grant 9,653,458 - Cheng , et al. May 16, 2 | 2017-05-16 |
Integration of vertical transistors with 3D long channel transistors
Grant 9,607,899 - Cheng , et al. March 28, 2 | 2017-03-28 |
Vertical single electron transistor formed by condensation
Grant 9,595,605 - Cheng , et al. March 14, 2 | 2017-03-14 |
Apparatus And Method For Semi-automated Parallel Synthesis Of Peptides
App 20130184436 - WANG; Zhuying ; et al. | 2013-07-18 |
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