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Patent applications and USPTO patent grants for Xie; Kezhou.The latest application filed is for "structures and methods for fabricating vertically integrated hbt-fet device".
Patent | Date |
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Structures and methods for fabricating vertically integrated HBT-FET device Grant 7,718,486 - Krutko , et al. May 18, 2 | 2010-05-18 |
Structures and methods for fabricating vertically integrated HBT-FET device App 20060113566 - Krutko; Oleh ;   et al. | 2006-06-01 |
Structures and methods for fabricating vertically integrated HBT/FET device Grant 7,015,519 - Krutko , et al. March 21, 2 | 2006-03-21 |
Monolithically fabricated HBT amplification stage with current limiting FET Grant 6,998,920 - Krutko , et al. February 14, 2 | 2006-02-14 |
Structures and methods for fabricating integrated HBT/FET's at competitive cost App 20050184310 - Krutko, Oleh ;   et al. | 2005-08-25 |
Monolithically fabricated HBT amplification stage with current limiting FET App 20050184808 - Krutko, Oleh B. ;   et al. | 2005-08-25 |
Low defect density gallium nitride epilayer and method of preparing the same Grant 6,180,270 - Cole , et al. January 30, 2 | 2001-01-30 |
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