| Patent | Date |
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High Electron Mobility Transistor Device Having An Aluminum-doped Buffer Layer
App 20220199813 - Jimenez; Jose ; et al. | 2022-06-23 |
Process of fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors
Grant 10,749,009 - Gu , et al. A | 2020-08-18 |
High electron mobility transistor (HEMT) device
Grant 10,734,512 - Beam, III , et al. | 2020-08-04 |
High electron mobility transistor (HEMT) device
Grant 10,636,881 - Beam, III , et al. | 2020-04-28 |
Field-effect transistor
Grant 10,559,665 - Xie , et al. Feb | 2020-02-11 |
Enhancement-mode/depletion-mode field-effect transistor GAN technology
Grant 10,446,544 - Jimenez , et al. Oc | 2019-10-15 |
Field-effect Transistor
App 20190267452 - Xie; Jinqiao ; et al. | 2019-08-29 |
High Electron Mobility Transistor (hemt) Device
App 20190237570 - Beam, III; Edward A. ; et al. | 2019-08-01 |
Field-effect transistor
Grant 10,290,713 - Xie , et al. | 2019-05-14 |
Field-effect Transistor
App 20190035895 - Xie; Jinqiao ; et al. | 2019-01-31 |
Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces
Grant 10,177,247 - Xie , et al. J | 2019-01-08 |
Enhancement-mode/depletion-mode Field-effect Transistor Gan Technology
App 20180358357 - Jimenez; Jose ; et al. | 2018-12-13 |
Semiconductor device with high thermal conductivity substrate and process for making the same
Grant 10,090,172 - Gu , et al. October 2, 2 | 2018-10-02 |
Semiconductor device with high thermal conductivity substrate and process for making the same
Grant 10,037,899 - Gu , et al. July 31, 2 | 2018-07-31 |
CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO INTERNAL REGROWTH INTERFACES
App 20180212045 - Xie; Jinqiao ; et al. | 2018-07-26 |
Double heterojunction field effect transistor with polarization compensated layer
Grant 9,972,708 - Xie , et al. May 15, 2 | 2018-05-15 |
Power Semiconductor Devices Incorporating Single Crystalline Aluminum Nitride Substrate
App 20180026144 - Moody; Baxter ; et al. | 2018-01-25 |
High electron mobility transistor (HEMT) device and method of making the same
Grant 9,865,721 - Beam, III , et al. January 9, 2 | 2018-01-09 |
High Electron Mobility Transistor (hemt) Device And Method Of Making The Same
App 20170365700 - Beam, III; Edward A. ; et al. | 2017-12-21 |
Highly transparent aluminum nitride single crystalline layers and devices made therefrom
Grant 9,840,790 - Koukitu , et al. December 12, 2 | 2017-12-12 |
High Electron Mobility Transistor (hemt) Device
App 20170294529 - Beam, III; Edward A. ; et al. | 2017-10-12 |
Double Heterojunction Field Effect Transistor With Polarization Compensated Layer
App 20170278958 - Xie; Jinqiao ; et al. | 2017-09-28 |
Power semiconductor devices incorporating single crystalline aluminum nitride substrate
Grant 9,748,409 - Moody , et al. August 29, 2 | 2017-08-29 |
Optoelectronic devices incorporating single crystalline aluminum nitride substrate
Grant 9,680,062 - Xie , et al. June 13, 2 | 2017-06-13 |
Semiconductor Device With High Thermal Conductivity Substrate And Process For Making The Same
App 20170133295 - Gu; Xing ; et al. | 2017-05-11 |
Semiconductor Device With High Thermal Conductivity Substrate And Process For Making The Same
App 20170133239 - Gu; Xing ; et al. | 2017-05-11 |
Doped gallium nitride high-electron mobility transistor
Grant 9,640,650 - Beam, III , et al. May 2, 2 | 2017-05-02 |
Optoelectronic Devices Incorporating Single Crystalline Aluminum Nitride Substrate
App 20160181474 - Xie; Jinqiao ; et al. | 2016-06-23 |
Gallium nitride on high thermal conductivity material device and method
Grant 9,337,278 - Gu , et al. May 10, 2 | 2016-05-10 |
Optoelectronic devices incorporating single crystalline aluminum nitride substrate
Grant 9,299,883 - Xie , et al. March 29, 2 | 2016-03-29 |
Digital alloy layer in a III-nitrade based heterojunction field effect transistor
Grant 9,202,905 - Xie , et al. December 1, 2 | 2015-12-01 |
Highly Transparent Aluminum Nitride Single Crystalline Layers And Devices Made Therefrom
App 20150247260 - Koukitu; Akinori ; et al. | 2015-09-03 |
Doped Gallium Nitride High-electron Mobility Transistor
App 20150200287 - Beam, III; Edward A. ; et al. | 2015-07-16 |
Power Semiconductor Devices Incorporating Single Crystalline Aluminum Nitride Substrate
App 20140264714 - Moody; Baxter ; et al. | 2014-09-18 |
Optoelectronic Devices Incorporating Single Crystalline Aluminum Nitride Substrate
App 20140209923 - Xie; Jinqiao ; et al. | 2014-07-31 |
Propagation of misfit dislocations from buffer/Si interface into Si
Grant 8,008,181 - Liliental-Weber , et al. August 30, 2 | 2011-08-30 |
Propagation Of Misfit Dislocations From Buffer/si Interface Into Si
App 20100046567 - Liliental-Weber; Zuzanna ; et al. | 2010-02-25 |
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