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Patent applications and USPTO patent grants for Wu; Xu-Sheng.The latest application filed is for "method of manufacturing field effect transistor with spacer structure".
Patent | Date |
---|---|
Method Of Manufacturing Field Effect Transistor With Spacer Structure App 20220262918 - Min; Wei-Lun ;   et al. | 2022-08-18 |
FinFET having fluorine-doped gate sidewall spacers Grant 11,355,615 - Min , et al. June 7, 2 | 2022-06-07 |
Semiconductor Device And Method For Manufacturing The Same App 20210358814 - CHEN; Bwo-Ning ;   et al. | 2021-11-18 |
Dielectric Constant Reduction Of Gate Spacer App 20210359105 - WU; Xu-Sheng ;   et al. | 2021-11-18 |
Semiconductor device and method for manufacturing the same Grant 11,081,401 - Chen , et al. August 3, 2 | 2021-08-03 |
Dielectric constant reduction of gate spacer Grant 11,075,283 - Wu , et al. July 27, 2 | 2021-07-27 |
Field Effect Transistor And Method Of Manufacturing The Same App 20210226030 - Min; Wei-Lun ;   et al. | 2021-07-22 |
Semiconductor Device And Method For Manufacturing The Same App 20210166978 - CHEN; Bwo-Ning ;   et al. | 2021-06-03 |
Dielectric Constant Reduction Of Gate Spacer App 20200135887 - WU; Xu-Sheng ;   et al. | 2020-04-30 |
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