name:-0.062991857528687
name:-0.053586959838867
name:-0.013088941574097
Wu; Xiaoju Patent Filings

Wu; Xiaoju

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wu; Xiaoju.The latest application filed is for "high reliability polysilicon components".

Company Profile
12.46.53
  • Wu; Xiaoju - Dallas TX
  • Wu; Xiaoju - Yueyang N/A CN
  • Wu; Xiaoju - Irving TX
  • Wu; Xiaoju - Yueyuan N/A CN
  • Wu; Xiaoju - Yueyuan City CN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Trademarks
Patent Activity
PatentDate
Esd Protection Circuit With Isolated Scr For Negative Voltage Operation
App 20220189946 - Salman; Akram A. ;   et al.
2022-06-16
High Reliability Polysilicon Components
App 20220189949 - Higgins; Robert M. ;   et al.
2022-06-16
ESD protection circuit with isolated SCR for negative voltage operation
Grant 11,302,688 - Salman , et al. April 12, 2
2022-04-12
High reliability polysilicon components
Grant 11,296,075 - Higgins , et al. April 5, 2
2022-04-05
Drain extended transistor
Grant 11,152,505 - Sadovnikov , et al. October 19, 2
2021-10-19
Drain extended NMOS transistor
Grant 11,094,817 - Wu , et al. August 17, 2
2021-08-17
ESD protection circuit with isolated SCR for negative voltage operation
Grant 11,049,852 - Salman , et al. June 29, 2
2021-06-29
Drain centered LDMOS transistor with integrated dummy patterns
Grant 10,879,387 - Edwards , et al. December 29, 2
2020-12-29
Drain Extended Nmos Transistor
App 20200161471 - Wu; Xiaoju ;   et al.
2020-05-21
High Reliability Polysilicon Components
App 20200075583 - Higgins; Robert M. ;   et al.
2020-03-05
Drain extended NMOS transistor
Grant 10,580,890 - Wu , et al.
2020-03-03
Drain Centered Ldmos Transistor With Integrated Dummy Patterns
App 20200013890 - Edwards; Henry Litzmann ;   et al.
2020-01-09
Drain Extended Transistor
App 20200006549 - Sadovnikov; Alexei ;   et al.
2020-01-02
Protection Of Drain Extended Transistor Field Oxide
App 20200006550 - Todd; James Robert ;   et al.
2020-01-02
P-channel DEMOS device
Grant 10,505,037 - Tsai , et al. Dec
2019-12-10
Output driver with power down protection
Grant 10,498,326 - Wu , et al. De
2019-12-03
Drain centered LDMOS transistor with integrated dummy patterns
Grant 10,461,182 - Edwards , et al. Oc
2019-10-29
Semiconductor Device With Extended Electrically-safe Operating Area
App 20190214471 - Wu; Xiaoju
2019-07-11
Semiconductor device with extended electrically-safe operating area
Grant 10,347,732 - Wu July 9, 2
2019-07-09
Semiconductor device with extended electrically-safe operating area
Grant 10,326,014 - Wu
2019-06-18
Drain Extended Nmos Transistor
App 20190172946 - Wu; Xiaoju ;   et al.
2019-06-06
Esd Protection Circuit With Isolated Scr For Negative Voltage Operation
App 20180350795 - Salman; Akram A. ;   et al.
2018-12-06
Esd Protection Circuit With Isolated Scr For Negative Voltage Operation
App 20180350794 - Salman; Akram A. ;   et al.
2018-12-06
MOSFET transistors with robust subthreshold operations
Grant 10,090,299 - Wu , et al. October 2, 2
2018-10-02
ESD protection circuit with isolated SCR for negative voltage operation
Grant 10,083,951 - Salman , et al. September 25, 2
2018-09-25
Semiconductor Device With Extended Electrically-safe Operating Area
App 20180269317 - Wu; Xiaoju
2018-09-20
P-channel Demos Device
App 20180197986 - TSAI; CHIN-YU ;   et al.
2018-07-12
Semiconductor Device With Extended Electrically-safe Operating Area
App 20180190813 - WU; Xiaoju
2018-07-05
Semiconductor device with extended electrically-safe operating area
Grant 10,014,405 - Wu July 3, 2
2018-07-03
Mosfet Transistors With Robust Subthreshold Operations
App 20180130798 - Wu; Xiaoju ;   et al.
2018-05-10
P-channel DEMOS device
Grant 9,947,783 - Tsai , et al. April 17, 2
2018-04-17
MOSFET transistors with robust subthreshold operations
Grant 9,899,376 - Wu , et al. February 20, 2
2018-02-20
P-channel Demos Device
App 20170309744 - TSAI; CHIN-YU ;   et al.
2017-10-26
Output Driver With Power Down Protection
App 20170257088 - Wu; Xiaoju ;   et al.
2017-09-07
MOSFET Transistors with Robust Subthreshold Operations
App 20170256537 - Wu; Xiaoju ;   et al.
2017-09-07
Catalyst and the preparation process thereof and a process for epoxidising olefin
Grant 9,221,039 - Lin , et al. December 29, 2
2015-12-29
Esd Protection Circuit With Isolated Scr For Negative Voltage Operation
App 20150294967 - Salman; Akram A. ;   et al.
2015-10-15
ESD protection circuit with isolated SCR for negative voltage operation
Grant 9,099,523 - Salman , et al. August 4, 2
2015-08-04
Process for producing an alkylene oxide by olefin epoxidation
Grant 8,859,791 - Li , et al. October 14, 2
2014-10-14
Esd Protection Circuit With Isolated Scr For Negative Voltage Operation
App 20140124828 - Salman; Akram A. ;   et al.
2014-05-08
Area-efficient electrically erasable programmable memory cell
Grant 8,581,324 - Wu , et al. November 12, 2
2013-11-12
Catalyst, Preparation Method Therefor, And A Method For Epoxidating Olefin
App 20130253208 - Lin; Min ;   et al.
2013-09-26
Method For Producing Oxidized Olefin Through Olefin Epoxidation
App 20130211112 - Li; Hua ;   et al.
2013-08-15
Area-efficient Electrically Erasable Programmable Memory Cell
App 20120074479 - Wu; Xiaoju ;   et al.
2012-03-29
Area-efficient electrically erasable programmable memory cell
Grant 8,125,830 - Wu , et al. February 28, 2
2012-02-28
Methods for reducing gate dielectric thinning on trench isolation edges and integrated circuits therefrom
Grant 8,114,744 - Chatterjee , et al. February 14, 2
2012-02-14
Single poly EEPROM without separate control gate nor erase regions
Grant 8,067,795 - Mitros , et al. November 29, 2
2011-11-29
Area-efficient Electrically Erasable Programmable Memory Cell
App 20110110160 - Wu; Xiaoju ;   et al.
2011-05-12
Area-efficient electrically erasable programmable memory cell
Grant 7,919,368 - Wu , et al. April 5, 2
2011-04-05
Automatic gain control
Grant 7,893,768 - Wang , et al. February 22, 2
2011-02-22
Area-Efficient Electrically Erasable Programmable Memory Cell
App 20100302854 - Wu; Xiaoju ;   et al.
2010-12-02
Gate Self-aligned Low Noise Jfet
App 20100264466 - Wu; Xiaoju ;   et al.
2010-10-21
Automatic Gain Control
App 20100231299 - Wang; Zhengyu ;   et al.
2010-09-16
Method to detect poly residues in LOCOS process
Grant 7,785,906 - Wu , et al. August 31, 2
2010-08-31
Methods For Reducing Gate Dielectric Thinning On Trench Isolation Edges And Integrated Circuits Therefrom
App 20100164004 - CHATTERJEE; AMITAVA ;   et al.
2010-07-01
Gate self aligned low noise JFET
Grant 7,745,274 - Wu , et al. June 29, 2
2010-06-29
Body bias to facilitate transistor matching
Grant 7,687,856 - Edwards , et al. March 30, 2
2010-03-30
Low noise vertical variable gate control voltage JFET device in a BiCMOS process and methods to build this device
Grant 7,598,547 - Pendharker , et al. October 6, 2
2009-10-06
Simple And Effective Method To Detect Poly Residues In Locos Process
App 20090153174 - Wu; Xiaoju ;   et al.
2009-06-18
Area efficient differential EEPROM cell with improved data retention and read/write endurance
Grant 7,457,173 - Wu November 25, 2
2008-11-25
High Density Capacitor Using Topographic Surface
App 20080283966 - Pan; Shanjen ;   et al.
2008-11-20
Body Bias To Facilitate Transistor Matching
App 20080277731 - Edwards; Henry Litzmann ;   et al.
2008-11-13
Single poly EEPROM without separate control gate nor erase regions
App 20080225593 - Mitros; Jozef Czeslaw ;   et al.
2008-09-18
Gate self aligned low noise JFET
App 20080217664 - Wu; Xiaoju ;   et al.
2008-09-11
One time programmable EPROM fabrication in STI CMOS technology
Grant 7,402,874 - Wu July 22, 2
2008-07-22
Deep buried channel junction field effect transistor (DBCJFET)
Grant 7,348,228 - Wu March 25, 2
2008-03-25
EEPROM with etched tunneling window
Grant 7,307,309 - Hao , et al. December 11, 2
2007-12-11
Deep buried channel junction field effect transistor (DBCJFET)
App 20070275515 - Wu; Xiaoju
2007-11-29
Mitigation of gate oxide thinning in dual gate CMOS process technology
App 20070164366 - Wu; Xiaoju ;   et al.
2007-07-19
Fabrication of an OTP-EPROM having reduced leakage current
Grant 7,244,651 - Wu , et al. July 17, 2
2007-07-17
Low Noise Vertical Variable Gate Control Voltage JFET Device in a BiCMOS Process and Methods to Build this Device
App 20070080400 - Pendharker; Sameer P. ;   et al.
2007-04-12
Integrated circuit device with a vertical JFET
Grant 7,164,160 - Pendharker , et al. January 16, 2
2007-01-16
Area efficient differential EEPROM cell with improved data retention and read/write endurance
App 20060262599 - Wu; Xiaoju
2006-11-23
One time programmable EPROM fabrication in STI CMOS technology
App 20060244036 - Wu; Xiaoju
2006-11-02
Method for detecting epitaxial (EPI) induced buried layer shifts in semiconductor devices
Grant 7,112,953 - Chen , et al. September 26, 2
2006-09-26
Method for manufacturing a MOS transistor having reduced 1/f noise
Grant 7,018,880 - Hao , et al. March 28, 2
2006-03-28
Method for detecting EPI induced buried layer shifts in semiconductor devices
App 20060038553 - Chen; Xinfen ;   et al.
2006-02-23
EEPROM with etched tunneling window
App 20050194631 - Hao, Pinghai ;   et al.
2005-09-08
Method of manufacturing and structure of semiconductor device (DEMOS) with field oxide structure
Grant 6,921,701 - Wu July 26, 2
2005-07-26
Method for manufacturing a metal oxide transistor having reduced 1/f noise
App 20050136579 - Hao, Pinghai ;   et al.
2005-06-23
Threshold voltage stabilizer, method of manufacturing and integrated circuit employing the same
Grant 6,885,054 - Wu , et al. April 26, 2
2005-04-26
Low noise vertical variable gate control voltage JFET device in a BiCMOS process and methods to build this device
App 20050067631 - Pendharker, Sameer P. ;   et al.
2005-03-31
Method for manufacturing and structure of semiconductor device with polysilicon definition structure
Grant 6,870,242 - Wu March 22, 2
2005-03-22
Fabrication of an OTP-EPROM having reduced leakage current
App 20040235246 - Wu, Xiaoju ;   et al.
2004-11-25
Method for manufacturing and structure of semiconductor device with polysilicon definition structure
Grant 6,790,736 - Wu September 14, 2
2004-09-14
Method of manufacturing and structure of semiconductor device with field oxide structure
App 20040175892 - Wu, Xiaoju
2004-09-09
Method of manufacturing and structure of semiconductor device with field oxide structure
Grant 6,730,962 - Wu May 4, 2
2004-05-04
Method for manufacturing and structure of semiconductor device with polysilicon definition structure
App 20040058505 - Wu, Xiaoju
2004-03-25
System for multiple input floating gate structures
App 20030141537 - Wu, Xiaoju
2003-07-31
Method of manufacturing and structure of semiconductor device with field oxide structure
App 20030109112 - Wu, Xiaoju
2003-06-12
Method for manufacturing and structure of semiconductor device with polysilicon definition structure
App 20030100149 - Wu, Xiaoju
2003-05-29
Isolated high voltage MOS transistor
App 20020149067 - Mitros, Jozef C. ;   et al.
2002-10-17
High density capacitor using topographic surface
App 20020084479 - Pan, Shanjen ;   et al.
2002-07-04
Electronic circuit with electrical hole isolator
App 20020079530 - Wu, Xiaoju ;   et al.
2002-06-27

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