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Word line structure with single-sided partially recessed gate structure Grant 7,358,576 - Kuan , et al. April 15, 2 | 2008-04-15 |
Method for forming self-aligned contact in semiconductor device Grant 7,115,491 - Huang , et al. October 3, 2 | 2006-10-03 |
Bitline structure for DRAM and method of forming the same Grant 7,075,138 - Wu July 11, 2 | 2006-07-11 |
Method for forming bit line Grant 7,052,949 - Wu , et al. May 30, 2 | 2006-05-30 |
Deep trench structure manufacturing process Grant 7,033,885 - Hsu , et al. April 25, 2 | 2006-04-25 |
Method for avoiding short-circuit of conductive wires Grant 7,030,011 - Wu , et al. April 18, 2 | 2006-04-18 |
Word line structure with single-sided partially recessed gate structure App 20060030091 - Kuan; Shih-Fan ;   et al. | 2006-02-09 |
World line structure with single-sided partially recessed gate structure Grant 6,991,978 - Kuan , et al. January 31, 2 | 2006-01-31 |
Method for fabricating a trench capacitor of DRAM Grant 6,979,613 - Wu , et al. December 27, 2 | 2005-12-27 |
Method for forming self-aligned contact in semiconductor device App 20050277258 - Huang, Tse-Yao ;   et al. | 2005-12-15 |
Semiconductor Device And Fabricating Method Thereof App 20050275109 - Kuan, Shih-Fan ;   et al. | 2005-12-15 |
Method For Fabricating A Trench Capacitor Of Dram App 20050277247 - Wu, Kuo-Chien ;   et al. | 2005-12-15 |
Method of fabricating semiconductor device Grant 6,972,248 - Yang , et al. December 6, 2 | 2005-12-06 |
Method for forming contact window App 20050260847 - Yang, J. H. ;   et al. | 2005-11-24 |
Method of reducing the aspect ratio of a trench Grant 6,960,530 - Wu , et al. November 1, 2 | 2005-11-01 |
Method for fabricating a trench capacitor Grant 6,960,503 - Hsu , et al. November 1, 2 | 2005-11-01 |
Method for fabricating memory device having a deep trench capacitor Grant 6,953,725 - Hsu , et al. October 11, 2 | 2005-10-11 |
Method of fabricating semiconductor device App 20050202666 - Yang, Sweehan J.H. ;   et al. | 2005-09-15 |
Method for manufacturing gate structure with sides of its metal layer partially removed Grant 6,943,099 - Kuan , et al. September 13, 2 | 2005-09-13 |
Method of manufacturing semiconductor device featuring formation of conductive plugs Grant 6,933,229 - Kuan , et al. August 23, 2 | 2005-08-23 |
Method for forming DRAM cell bit line and bit line contact structure Grant 6,930,043 - Wu , et al. August 16, 2 | 2005-08-16 |
Method for manufacturing gate structure of memory App 20050176244 - Kuan, Shih-Fan ;   et al. | 2005-08-11 |
Method For Manufacturing Gate Structure With Sides Of Its Metal Layer Partially Removed App 20050170624 - Kuan, Shih-Fan ;   et al. | 2005-08-04 |
World line structure with single-sided partially recessed gate structure App 20050167763 - Kuan, Shih-Fan ;   et al. | 2005-08-04 |
Method for manufacturing gate structure for use in semiconductor device App 20050124127 - Ho, Tzu-En ;   et al. | 2005-06-09 |
Method For Fabricating A Trench Capacitor App 20050106831 - Hsu, Ping ;   et al. | 2005-05-19 |
Deep trench structure manufacturing process App 20050070065 - Hsu, Ping ;   et al. | 2005-03-31 |
Method for avoiding erosion of DRAM fuse sidewall App 20050032389 - Wu, Kuo-Chien | 2005-02-10 |
Method for avoiding short-circuit of conductive wires App 20050032343 - Wu, Kuo-Chien ;   et al. | 2005-02-10 |
Method for forming DRAM cell bit line and bit line contact structure App 20050026409 - Wu, Kuo-Chien ;   et al. | 2005-02-03 |
Method for forming aluminum-containing interconnect App 20050020059 - Chen, Yi-Nan ;   et al. | 2005-01-27 |
[semiconductor Device And Fabricating Method Thereof] App 20050012218 - KUAN, SHIH-FAN ;   et al. | 2005-01-20 |
Method for forming DRAM cell bit-line contact App 20050003307 - Kuan, Shih-Fan ;   et al. | 2005-01-06 |
[method For Fabricating Memory Device Having A Deep Trench Capacitor] App 20040253785 - HSU, PING ;   et al. | 2004-12-16 |
Method of reducing the aspect ratio of a trench App 20040203247 - WU, Chang-Rong ;   et al. | 2004-10-14 |
Method of forming bit lines and bit line contacts in a memory device Grant 6,797,564 - Wu , et al. September 28, 2 | 2004-09-28 |
Method of fabricating contact holes on a semiconductor chip Grant 6,797,611 - Wu , et al. September 28, 2 | 2004-09-28 |
Bitline structure for DRAM and method of forming the same Grant 6,790,771 - Wu September 14, 2 | 2004-09-14 |
Bitline structure for DRAM and method of forming the same App 20040140496 - Wu, Kuo-Chien | 2004-07-22 |
Method for forming bit line App 20040127013 - Wu, Kuo-Chien ;   et al. | 2004-07-01 |
Bitline structure for DRAM and method of forming the same App 20040106280 - Wu, Kuo-Chien | 2004-06-03 |
Method For Forming Silicide At Source And Drain App 20040106282 - Wu, Kuo-Chien ;   et al. | 2004-06-03 |
Method for forming silicide at source and drain Grant 6,743,717 - Wu , et al. June 1, 2 | 2004-06-01 |
Method for forming bit line contact App 20040058519 - Wu, Kuo-Chien ;   et al. | 2004-03-25 |
Method for manufacturing polysilicon with relatively small line width Grant 5,888,904 - Wu March 30, 1 | 1999-03-30 |