Wu; Cheng-Jun
Patent Applications and Registrations
Patent applications and USPTO patent grants for Wu; Cheng-Jun.The latest application filed is for "semiconductor memory structures and method of forming the same".
- Wu; Cheng-Jun - Hsinchu TW
- Wu; Cheng-Jun - Hsin-Chu TW
- Wu; Cheng-Jun - Hsinchu City TW
| Patent | Date |
|---|---|
| Semiconductor Memory Structures And Method Of Forming The Same App 20220278127 - Sun; Hung-Chang ; et al. | 2022-09-01 |
| Three-dimensional Memory Array With Local Line Selector App 20220254791 - Wu; Cheng-Jun ; et al. | 2022-08-11 |
| Multi-step reset technique to enlarge memory window Grant 11,107,528 - Chen , et al. August 31, 2 | 2021-08-31 |
| Bottom Electrode Structure In Memory Device App 20210242400 - Chen; Chao-Yang ; et al. | 2021-08-05 |
| High Electron Affinity Dielectric Layer To Improve Cycling App 20210135105 - Chen; Chao-Yang ; et al. | 2021-05-06 |
| Bottom electrode structure in memory device Grant 10,985,316 - Chen , et al. April 20, 2 | 2021-04-20 |
| Wakeup-free Ferroelectric Memory Device App 20210098630 - Hsieh; Mickey ; et al. | 2021-04-01 |
| Multi-step Reset Technique To Enlarge Memory Window App 20210043257 - Chen; Chao-Yang ; et al. | 2021-02-11 |
| Wakeup-free ferroelectric memory device Grant 10,879,391 - Hsieh , et al. December 29, 2 | 2020-12-29 |
| Multi-step reset technique to enlarge memory window Grant 10,861,547 - Chen , et al. December 8, 2 | 2020-12-08 |
| Multi-step Reset Technique To Enlarge Memory Window App 20200372955 - Chen; Chao-Yang ; et al. | 2020-11-26 |
| Wakeup-free Ferroelectric Memory Device App 20200357927 - Hsieh; Mickey ; et al. | 2020-11-12 |
| Bottom Electrode Structure In Memory Device App 20200106011 - Chen; Chao-Yang ; et al. | 2020-04-02 |
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