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name:-0.0073719024658203
name:-0.0072999000549316
Wu; Bone-Fong Patent Filings

Wu; Bone-Fong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wu; Bone-Fong.The latest application filed is for "inner spacer features for multi-gate transistors".

Company Profile
6.6.7
  • Wu; Bone-Fong - Hsinchu TW
  • Wu; Bone-Fong - Hsinchu City TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method for forming semiconductor device
Grant 11,437,278 - Chang , et al. September 6, 2
2022-09-06
Inner Spacer Features for Multi-Gate Transistors
App 20220223718 - Wu; Bone-Fong ;   et al.
2022-07-14
Inner spacer features for multi-gate transistors
Grant 11,289,584 - Wu , et al. March 29, 2
2022-03-29
Inner Spacer Features for Multi-Gate Transistors
App 20210336034 - Wu; Bone-Fong ;   et al.
2021-10-28
Creating devices with multiple threshold voltages by cut-metal-gate process
Grant 10,868,003 - Wen , et al. December 15, 2
2020-12-15
Method For Forming Semiconductor Device
App 20200365465 - CHANG; Chang-Yun ;   et al.
2020-11-19
Semiconductor device having a metal gate and formation method thereof
Grant 10,741,450 - Chang , et al. A
2020-08-11
Creating Devices with Multiple Threshold Voltages by Cut-Metal-Gate Process
App 20200058650 - Wen; Ming-Chang ;   et al.
2020-02-20
Creating devices with multiple threshold voltage by cut-metal-gate process
Grant 10,461,078 - Wen , et al. Oc
2019-10-29
Creating Devices with Multiple Threshold Voltage by Cut-Metal-Gate Process
App 20190267372 - Wen; Ming-Chang ;   et al.
2019-08-29
Semiconductor Device And Formation Method Thereof
App 20190164838 - CHANG; Chang-Yun ;   et al.
2019-05-30
Dopant implantation method using multi-step implants
Grant 8,008,158 - Chang , et al. August 30, 2
2011-08-30
Dopant Implantation Method And Integrated Circuits Formed Thereby
App 20100009506 - Chang; Tse-En ;   et al.
2010-01-14

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