WOON; Wei-Yen

Patent Applications and Registrations

Patent applications and USPTO patent grants for WOON; Wei-Yen.The latest application filed is for "contact structures in semiconductor devices".

Company Profile

2.5.7

WOON; Wei-Yen - Hsinchu City TW
Woon; Wei-Yen - Hsinchu TW
Woon; Wei-Yen - Taoyuan TW
WOON; Wei-Yen - Taoyuan City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Contact Structures in Semiconductor Devices App 20220310800 - Khaderbad; Mrunal Abhijith ; et al.	2022-09-29
2D Channel Transistors with Low Contact Resistance App 20220293736 - Khaderbad; Mrunal Abhijith ; et al.	2022-09-15
Graphene Wrap-around Contact App 20220285515 - KHADERBAD; Mrunal Abhijith ; et al.	2022-09-08
Graphene Layer For Low Resistance Contacts And Damascene Interconnects App 20220285221 - Khaderbad; Mrunal Abhijith ; et al.	2022-09-08
Ion generation composite target and laser-driven ion acceleration apparatus using the same Grant 11,011,340 - Woon , et al. May 18, 2	2021-05-18
Ion Generation Composite Target And Laser-driven Ion Acceleration Apparatus Using The Same App 20210035768 - WOON; Wei-Yen ; et al.	2021-02-04
Method for fabricating a vertical heterojunction of metal chalcogenides Grant 9,899,214 - Liang , et al. February 20, 2	2018-02-20
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 8,404,546 - Woon , et al. March 26, 2	2013-03-26
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20110027955 - Woon; Wei-Yen ; et al.	2011-02-03
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 7,838,887 - Woon , et al. November 23, 2	2010-11-23
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20090273034 - Woon; Wei-Yen ; et al.	2009-11-05

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