loadpatents
Patent applications and USPTO patent grants for Wood; Bingxi.The latest application filed is for "horizontal gate all around and finfet device isolation".
Patent | Date |
---|---|
Horizontal gate all around and FinFET device isolation Grant 11,145,761 - Sun , et al. October 12, 2 | 2021-10-12 |
Horizontal Gate All Around And Finfet Device Isolation App 20200035822 - SUN; Shiyu ;   et al. | 2020-01-30 |
Horizontal gate all around and FinFET device isolation Grant 10,490,666 - Sun , et al. Nov | 2019-11-26 |
Horizontal gate all around and FinFET device isolation Grant 9,865,735 - Sun , et al. January 9, 2 | 2018-01-09 |
Horizontal Gate All Around And Finfet Device Isolation App 20160336405 - SUN; Shiyu ;   et al. | 2016-11-17 |
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications Grant 9,484,406 - Sun , et al. November 1, 2 | 2016-11-01 |
Methods for chemical mechanical planarization of patterned wafers Grant 9,177,815 - Huang , et al. November 3, 2 | 2015-11-03 |
Fin formation by epitaxial deposition Grant 8,999,821 - Brand , et al. April 7, 2 | 2015-04-07 |
Dual gate process Grant 8,999,829 - Brand , et al. April 7, 2 | 2015-04-07 |
Fin Formation By Epitaxial Deposition App 20150050800 - Brand; Adam ;   et al. | 2015-02-19 |
Method of fabricating a self-aligned buried bit line for a vertical channel DRAM Grant 8,895,432 - Chang , et al. November 25, 2 | 2014-11-25 |
Fin Field Effect Transistor Fabricated With Hollow Replacement Channel App 20140231914 - Chang; Chorng-Ping ;   et al. | 2014-08-21 |
Dual Gate Process App 20140113442 - Brand; Adam ;   et al. | 2014-04-24 |
Method of fabricating a self-aligned buried bit line for a vertical channel dram App 20130320542 - Chang; Chorng-Ping ;   et al. | 2013-12-05 |
Methods For Chemical Mechanical Planarization Of Patterned Wafers App 20130295752 - HUANG; YI-CHIAU ;   et al. | 2013-11-07 |
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