Wolters; Robertus A. M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wolters; Robertus A. M..The latest application filed is for "phase change memory cells and fabrication thereof".

Company Profile

0.15.8

Wolters; Robertus A. M. - Eindhoven N/A NL

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic detection of back-side layer Grant 8,657,191 - Zieren , et al. February 25, 2	2014-02-25
Phase change memory cells and fabrication thereof Grant 8,415,226 - Kochupurackal , et al. April 9, 2	2013-04-09
Tamper-resistant semiconductor device and methods of manufacturing thereof Grant 8,143,705 - Van Geloven , et al. March 27, 2	2012-03-27
Sensing circuit for devices with protective coating Grant 8,138,768 - Van Geloven , et al. March 20, 2	2012-03-20
Phase Change Memory Cells and Fabrication Thereof App 20110297908 - Kochupurackal; Jinesh B.P. ; et al.	2011-12-08
Method of making an interconnect structure Grant 7,943,509 - Daamen , et al. May 17, 2	2011-05-17
Magnetic Detection Of Back-side Layer App 20100283456 - Zieren; Victor ; et al.	2010-11-11
Particle Comprising Core And Shell And Applications Thereof App 20100234209 - Furukawa; Yukiko ; et al.	2010-09-16
Tamper-resistant Semiconductor Device And Methods Of Manufacturing Thereof App 20100187527 - Van Geloven; Johannes A. J. ; et al.	2010-07-29
Sensing Circuit For Devices With Protective Coating App 20100090714 - Van Geloven; Johannes A. J. ; et al.	2010-04-15
Method Of Making An Interconnect Structure App 20100029076 - Daamen; Roel ; et al.	2010-02-04
Method Of Modifying Surface Area And Electronic Device App 20090302419 - Kemmeren; Antonius L A M ; et al.	2009-12-10
Fabrication of Phase-Change Resistor Using a Backend Process App 20080277642 - In T Zandt; Michael A., A. ; et al.	2008-11-13
Method of manufacturing semiconductor devices each including a semiconductor body with a surface provided with a metallization having a Ti layer and a TiN layer Grant 5,858,183 - Wolters , et al. January 12, 1	1999-01-12
Method of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectric Grant 5,554,559 - Wolters , et al. September 10, 1	1996-09-10
Method of manufacturing a semiconductor device in which a surface of a semiconductor body is provided with mutually-insulated aluminum tracks Grant 5,399,235 - Mutsaers , et al. March 21, 1	1995-03-21
Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor Grant 5,396,095 - Wolters , et al. March 7, 1	1995-03-07
Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body Grant 5,366,928 - Wolters , et al. November 22, 1	1994-11-22
Method of manufacturing a semiconductor device whereby a layer containing aluminium is deposited on a surface of a semiconductor body Grant 5,266,524 - Wolters November 30, 1	1993-11-30
Method of manufacturing mono-layer capacitors Grant 5,160,762 - Brand , et al. November 3, 1	1992-11-03
Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes Grant 5,122,477 - Wolters , et al. June 16, 1	1992-06-16

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