Williams; Adam J.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Williams; Adam J..The latest application filed is for "highly scaled linear gan hemt structures".
- Williams; Adam J. - Los Alamitos CA
- Williams; Adam J. - Malibu CA
- Williams; Adam J. - Santa Paula CA
Trademarks
| Patent | Date |
|---|---|
| Highly scaled linear GaN HEMT Structures Grant 10,714,605 - Moon , et al. | 2020-07-14 |
| Highly Scaled Linear GaN HEMT Structures App 20190252535 - MOON; Jeong-Sun ; et al. | 2019-08-15 |
| Tunnel barrier schottky Grant 10,134,851 - Chu , et al. November 20, 2 | 2018-11-20 |
| Tunnel Barrier Schottky App 20180114837 - Chu; Rongming ; et al. | 2018-04-26 |
| Tunnel barrier schottky Grant 9,899,482 - Chu , et al. February 20, 2 | 2018-02-20 |
| Tunnel Barrier Schottky App 20170047453 - Chu; Rongming ; et al. | 2017-02-16 |
| Etch-based fabrication process for stepped field-plate wide-bandgap Grant 9,419,122 - Corrion , et al. August 16, 2 | 2016-08-16 |
| Etch-based fabrication process for stepped field-plate wide-bandgap Grant 9,202,880 - Corrion , et al. December 1, 2 | 2015-12-01 |
| III-Nitride metal-insulator-semiconductor field-effect transistor Grant 9,059,200 - Chu , et al. June 16, 2 | 2015-06-16 |
| Normally-off III-nitride transistors with high threshold-voltage and low on-resistance Grant 8,941,118 - Chu , et al. January 27, 2 | 2015-01-27 |
| III-nitride metal insulator semiconductor field effect transistor Grant 8,853,709 - Chu , et al. October 7, 2 | 2014-10-07 |
| III-Nitride Metal Insulator Semiconductor Field effect Transistor App 20130026495 - Chu; Rongming ; et al. | 2013-01-31 |
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