loadpatents
name:-0.033595085144043
name:-0.023496150970459
name:-0.019085884094238
Wildman; Horatio S. Patent Filings

Wildman; Horatio S.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wildman; Horatio S..The latest application filed is for "method and process for forming a self-aligned silicide contact".

Company Profile
0.5.8
  • Wildman; Horatio S. - Wappingers Falls NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method and process for forming a self-aligned silicide contact
Grant 8,101,518 - Cabral, Jr. , et al. January 24, 2
2012-01-24
Method and process for forming a self-aligned silicide contact
Grant 7,544,610 - Cabral, Jr. , et al. June 9, 2
2009-06-09
Buried short location determination using voltage contrast inspection
Grant 7,474,107 - Patterson , et al. January 6, 2
2009-01-06
Method And Process For Forming A Self-aligned Silicide Contact
App 20080274611 - Cabral; Cyril ;   et al.
2008-11-06
Buried Short Location Determination Using Voltage Contrast Inspection
App 20070222470 - Patterson; Oliver D. ;   et al.
2007-09-27
Electroless Cobalt-containing Liner For Middle-of-the-line (mol) Applications
App 20070210448 - Wong; Keith Kwong Hon ;   et al.
2007-09-13
Methods To Form Heterogeneous Silicides/germanides In Cmos Technology
App 20070123042 - Rim; Kern ;   et al.
2007-05-31
Method and process for forming a self-aligned silicide contact
App 20060051961 - Cabral; Cyril JR. ;   et al.
2006-03-09
A Low Thermal Budget (mol) Liner, A Semiconductor Device Comprising Said Liner And Method Of Forming Said Semiconductor Device
App 20050221612 - Brown, Laura ;   et al.
2005-10-06
Method and apparatus for removing backside edge polymer
App 20040137745 - Houghton, Thomas F. ;   et al.
2004-07-15
Method for producing a flat interface for a metal-silicon contact barrier film
App 20020180046 - Wang, Yun-Yu ;   et al.
2002-12-05
Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film
Grant 6,022,801 - Domenicucci , et al. February 8, 2
2000-02-08
Method of metal silicide formation in integrated circuit devices
Grant 5,401,677 - Bailey , et al. March 28, 1
1995-03-28

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