Wieczorek; Karsten

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wieczorek; Karsten.The latest application filed is for "gate dielectrics of different thickness in pmos and nmos transistors".

Company Profile

0.60.60

Wieczorek; Karsten - Dresden DE
Wieczorek; Karsten - Am Schulfeld DE
Wieczorek; Karsten - Boxdorf DE
Wieczorek; Karsten - Reichenberg-Boxdorf DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Drive current adjustment for transistors by local gate engineering Grant 8,188,871 - Horstmann , et al. May 29, 2	2012-05-29
Etch stop layer of reduced thickness for patterning a dielectric material in a contact level of closely spaced transistors Grant 8,097,542 - Wieczorek , et al. January 17, 2	2012-01-17
Method for reducing defects of gate of CMOS devices during cleaning processes by modifying a parasitic PN junction Grant 8,039,338 - Horstmann , et al. October 18, 2	2011-10-18
Gate dielectrics of different thickness in PMOS and NMOS transistors Grant 7,994,037 - Trentzsch , et al. August 9, 2	2011-08-09
Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors Grant 7,955,937 - Wieczorek , et al. June 7, 2	2011-06-07
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques Grant 7,745,334 - Press , et al. June 29, 2	2010-06-29
Drive Current Adjustment For Transistors By Local Gate Engineering App 20100025776 - Horstmann; Manfred ; et al.	2010-02-04
Gate Dielectrics Of Different Thickness In Pmos And Nmos Transistors App 20100025770 - Trentzsch; Martin ; et al.	2010-02-04
Method For Reducing Defects Of Gate Of Cmos Devices During Cleaning Processes By Modifying A Parasitic Pn Junction App 20090273036 - Horstmann; Manfred ; et al.	2009-11-05
Etch Stop Layer Of Reduced Thickness For Patterning A Dielectric Material In A Contact Level Of Closely Spaced Transistors App 20090218629 - Wieczorek; Karsten ; et al.	2009-09-03
Compensation Of Operating Time Related Degradation Of Operating Speed By Adapting The Supply Voltage App 20090085652 - Wiatr; Maciej ; et al.	2009-04-02
Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor Grant 7,494,872 - Wieczorek , et al. February 24, 2	2009-02-24
CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure Grant 7,419,867 - Wieczorek , et al. September 2, 2	2008-09-02
Technique For Locally Adapting Transistor Characteristics By Using Advanced Laser/flash Anneal Techniques App 20080081471 - Press; Patrick ; et al.	2008-04-03
Semiconductor device having a retrograde dopant profile in a channel region Grant 7,297,994 - Wieczorek , et al. November 20, 2	2007-11-20
Method For Forming Ultra-shallow High Quality Junctions By A Combination Of Solid Phase Epitaxy And Laser Annealing App 20070232033 - Wieczorek; Karsten ; et al.	2007-10-04
Semiconductor Device Comprising Soi Transistors And Bulk Transistors And A Method Of Forming The Same App 20070228377 - Wieczorek; Karsten ; et al.	2007-10-04
Method Of Forming A Semiconductor Structure Comprising Transistor Elements With Differently Stressed Channel Regions App 20070207583 - Burbach; Gert ; et al.	2007-09-06
Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions Grant 7,238,578 - Burbach , et al. July 3, 2	2007-07-03
Method of forming different silicide portions on different silicon-containing regions in a semiconductor device Grant 7,226,859 - Wieczorek , et al. June 5, 2	2007-06-05
Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device Grant 7,217,657 - Wieczorek , et al. May 15, 2	2007-05-15
Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity Grant 7,192,881 - Kammler , et al. March 20, 2	2007-03-20
Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device Grant 7,148,145 - Wieczorek , et al. December 12, 2	2006-12-12
Semiconductor device having a gate dielectric of different blocking characteristics App 20060244069 - Wieczorek; Karsten ; et al.	2006-11-02
Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrate Grant 7,122,410 - Kammler , et al. October 17, 2	2006-10-17
Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device Grant 7,115,464 - Stephan , et al. October 3, 2	2006-10-03
Method of forming gate insulation layers of different characteristics App 20060148163 - Wieczorek; Karsten ; et al.	2006-07-06
Method of forming a metal silicide Grant 7,067,410 - Wieczorek , et al. June 27, 2	2006-06-27
SRAM devices utilizing tensile-stressed strain films and methods for fabricating the same Grant 7,060,549 - Craig , et al. June 13, 2	2006-06-13
Method of removing features using an improved removal process in the fabrication of a semiconductor device Grant 7,041,583 - Wieczorek , et al. May 9, 2	2006-05-09
CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure App 20060094183 - Wieczorek; Karsten ; et al.	2006-05-04
Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions App 20060046400 - Burbach; Gert ; et al.	2006-03-02
Integrated semiconductor structure for reliability tests of dielectrics Grant 6,995,027 - Wieczorek , et al. February 7, 2	2006-02-07
Technique for evaluating local electrical characteristics in semiconductor devices App 20060022197 - Wirbeleit; Frank ; et al.	2006-02-02
Semiconductor component and method of manufacture Grant 6,933,620 - Lunning , et al. August 23, 2	2005-08-23
Semiconductor device having a retrograde dopant profile in a channel region App 20050151202 - Wieczorek, Karsten ; et al.	2005-07-14
Transistor element having an anisotropic high-k gate dielectric Grant 6,911,404 - Wieczorek , et al. June 28, 2	2005-06-28
Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity App 20050118769 - Kammler, Thorsten ; et al.	2005-06-02
Method of forming a thin oxide layer having improved reliability on a semiconductor surface Grant 6,900,111 - Wieczorek , et al. May 31, 2	2005-05-31
Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers App 20050098818 - Feudel, Thomas ; et al.	2005-05-12
Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same Grant 6,881,641 - Wieczorek , et al. April 19, 2	2005-04-19
Methods for producing a highly doped electrode for a field effect transistor Grant 6,875,676 - Wieczorek , et al. April 5, 2	2005-04-05
Semiconductor device having a nickel/cobalt silicide region formed in a silicon region App 20050070082 - Kammler, Thorsten ; et al.	2005-03-31
SOI field effect transistor element having a recombination region and method of forming same App 20050037548 - Wieczorek, Karsten ; et al.	2005-02-17
Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor App 20050023611 - Wieczorek, Karsten ; et al.	2005-02-03
Polysilicon line having a metal silicide region enabling linewidth scaling App 20050026379 - Kammler, Thorsten ; et al.	2005-02-03
Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer Grant 6,849,516 - Feudel , et al. February 1, 2	2005-02-01
Semiconductor component and method of manufacture App 20050009285 - Luning, Scott ; et al.	2005-01-13
Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material Grant 6,838,363 - Wieczorek , et al. January 4, 2	2005-01-04
Method of forming a metal silicide App 20040241971 - Wieczorek, Karsten ; et al.	2004-12-02
Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area Grant 6,821,840 - Wieczorek , et al. November 23, 2	2004-11-23
Method of forming a metal silicide gate in a standard MOS process sequence Grant 6,821,887 - Wieczorek , et al. November 23, 2	2004-11-23
Method of filling an opening in a material layer with an insulating material Grant 6,812,115 - Wieczorek , et al. November 2, 2	2004-11-02
Method of forming a low leakage dielectric layer providing an increased capacitive coupling Grant 6,812,159 - Wieczorek , et al. November 2, 2	2004-11-02
SOI field effect transistor element having a recombination region and method of forming same Grant 6,812,074 - Wieczorek , et al. November 2, 2	2004-11-02
Method of manufacturing a field effect transistor Grant 6,806,153 - Wieczorek , et al. October 19, 2	2004-10-19
Method of manufacturing a semiconductor component Grant 6,806,126 - Luning , et al. October 19, 2	2004-10-19
Integrated semiconductor structure for reliability tests of dielectrics App 20040188678 - Wieczorek, Karsten ; et al.	2004-09-30
Technique for forming an oxide/nitride layer stack by compensating nitrogen non-uniformities App 20040192057 - Wieczorek, Karsten ; et al.	2004-09-30
Field effect transistor with reduced gate delay and method of fabricating the same Grant 6,798,028 - Horstmann , et al. September 28, 2	2004-09-28
Method of forming a semiconductor device having T-shaped gate structure Grant 6,770,552 - Wieczorek , et al. August 3, 2	2004-08-03
Method of removing features using an improved removal process in the fabrication of a semiconductor device App 20040121531 - Wieczorek, Karsten ; et al.	2004-06-24
Method of manufacturing a field effect transistor App 20040121565 - Wieczorek, Karsten ; et al.	2004-06-24
Implant monitoring using multiple implanting and annealing steps Grant 6,754,553 - Wieczorek , et al. June 22, 2	2004-06-22
Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device Grant 6,746,927 - Kammler , et al. June 8, 2	2004-06-08
Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers App 20040104442 - Feudel, Thomas ; et al.	2004-06-03
Method of forming a nickel silicide region in a doped silicon-containing semiconductor area App 20040087121 - Kammler, Thorsten ; et al.	2004-05-06
Method of removing sidewall spacers in the fabrication of a semiconductor device using an improved removal process App 20040087155 - Wieczorek, Karsten ; et al.	2004-05-06
Technique for forming an oxide/nitride layer stack by controlling the nitrogen ion concentration in a nitridation plasma Grant 6,723,663 - Wieczorek , et al. April 20, 2	2004-04-20
Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material App 20040061228 - Wieczorek, Karsten ; et al.	2004-04-01
Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device App 20040048472 - Wieczorek, Karsten ; et al.	2004-03-11
Method Of Forming A Semiconductor Device Having T-Shaped Gate Structure App 20040046220 - Wieczorek, Karsten ; et al.	2004-03-11
Method of forming layers of oxide on a surface of a substrate Grant 6,703,278 - Wieczorek , et al. March 9, 2	2004-03-09
Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device App 20040043594 - Kammler, Thorsten ; et al.	2004-03-04
Transistor element having an anisotropic high-k gate dielectric App 20040041196 - Wieczorek, Karsten ; et al.	2004-03-04
Method of forming a low leakage dielectric layer providing an increased capacitive coupling App 20040043627 - Wieczorek, Karsten ; et al.	2004-03-04
Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area App 20040043558 - Wieczorek, Karsten ; et al.	2004-03-04
Method of providing a thick thermal oxide in trench isolation App 20040038495 - Wieczorek, Karsten ; et al.	2004-02-26
Method of forming a metal silicide gate in a standard MOS process sequence App 20040038435 - Wieczorek, Karsten ; et al.	2004-02-26
Highly doped electrode for a field effect transistor and method for producing same App 20040016974 - Wieczorek, Karsten ; et al.	2004-01-29
Method of filling an opening in a material layer with an insulating material App 20040018696 - Wieczorek, Karsten ; et al.	2004-01-29
Semiconductor device having increased metal silicide portions and method of forming the semiconductor Grant 6,673,665 - Wieczorek , et al. January 6, 2	2004-01-06
SOI field effect transistor element having a recombination region and method of forming same App 20040000691 - Wieczorek, Karsten ; et al.	2004-01-01
Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same App 20030183856 - Wieczorek, Karsten ; et al.	2003-10-02
Method for forming an improved metal silicide portion in a silicon-containing conductive region in an integrated circuit App 20030186523 - Wieczorek, Karsten ; et al.	2003-10-02
Method of forming metal silicide regions on a gate electrode and on the source/drain regions of a semiconductor device Grant 6,620,718 - Wieczorek , et al. September 16, 2	2003-09-16
Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device App 20030164524 - Stephan, Rolf ; et al.	2003-09-04
Method of forming different silicide portions on different silicon- containing regions in a semiconductor device App 20030162389 - Wieczorek, Karsten ; et al.	2003-08-28
Semiconductor device having increased metal silicide portions and method of forming the semiconductor App 20030162349 - Wieczorek, Karsten ; et al.	2003-08-28
Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device App 20030160198 - Wieczorek, Karsten ; et al.	2003-08-28
Method of forming layers of oxide on a surface of a substrate App 20030157772 - Wieczorek, Karsten ; et al.	2003-08-21
Semiconductor device having a reduced signal processing time and a method of fabricating the same Grant 6,541,863 - Horstmann , et al. April 1, 2	2003-04-01
Method of forming a thin oxide layer having improved reliability on a semiconductor surface App 20030008524 - Wieczorek, Karsten ; et al.	2003-01-09
Device improvement by lowering LDD resistance with new silicide process App 20020175371 - Hause, Frederick N. ; et al.	2002-11-28
Method of forming low resistance metal silicide region on a gate electrode of a transistor Grant 6,423,634 - Wieczorek , et al. July 23, 2	2002-07-23
Method Of Forming Lightly Doped Regions In A Semiconductor Device App 20020061626 - Feudel, Thomas ; et al.	2002-05-23
Field effect transistor with an improved gate contact and method of fabricating the same App 20020056879 - Wieczorek, Karsten ; et al.	2002-05-16
Semiconductor device with a radiation absorbing conductive protection layer and method of fabricating the same App 20020056923 - Wieczorek, Karsten ; et al.	2002-05-16
Implant monitoring using multiple implanting and annealing steps App 20020059011 - Wieczorek, Karsten ; et al.	2002-05-16
Semiconductor device with reduced line-to-line capacitance and cross talk noise App 20020056887 - Horstmann, Manfred ; et al.	2002-05-16
Field effect transistor with reduced gate delay and method of fabricating the same App 20020056859 - Horstmann, Manfred ; et al.	2002-05-16
Method of forming an etch stop layer during manufacturing of a semiconductor device App 20020058402 - Wieczorek, Karsten ; et al.	2002-05-16
Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumption Grant 6,383,906 - Wieczorek , et al. May 7, 2	2002-05-07
Sidewall spacer based fet alignment technology App 20020048890 - Wieczorek, Karsten ; et al.	2002-04-25
Fully self-aligned fet technology App 20020048862 - Wieczorek, Karsten ; et al.	2002-04-25
Transistor having a peripherally increased gate insulation thickness and a method of fabricating the same Grant 6,352,885 - Wieczorek , et al. March 5, 2	2002-03-05
Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making same Grant 6,306,698 - Wieczorek , et al. October 23, 2	2001-10-23
Low-bandgap source and drain formation for short-channel MOS transistors Grant 6,274,894 - Wieczorek , et al. August 14, 2	2001-08-14
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer Grant 6,274,511 - Wieczorek , et al. August 14, 2	2001-08-14
Method of forming a transistor having a low-resistance gate electrode Grant 6,268,257 - Wieczorek , et al. July 31, 2	2001-07-31
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regions Grant 6,255,214 - Wieczorek , et al. July 3, 2	2001-07-03
Method of forming a gate structure of a transistor by means of scalable spacer technology Grant 6,255,182 - Wieczorek , et al. July 3, 2	2001-07-03
Device with lower LDD resistance Grant 6,255,703 - Hause , et al. July 3, 2	2001-07-03
Device improvement by lowering LDD resistance with new silicide process Grant 6,242,776 - Hause , et al. June 5, 2	2001-06-05
Low-leakage CoSi2-processing by high temperature thermal processing Grant 6,207,563 - Wieczorek , et al. March 27, 2	2001-03-27
Formation of junctions by diffusion from a doped amorphous silicon film during silicidation Grant 6,169,005 - Kepler , et al. January 2, 2	2001-01-02
Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer Grant 6,150,243 - Wieczorek , et al. November 21, 2	2000-11-21
Device improvement by source to drain resistance lowering through undersilicidation Grant 6,133,124 - Horstmann , et al. October 17, 2	2000-10-17
Silicidation with silicon buffer layer and silicon spacers Grant 6,100,145 - Kepler , et al. August 8, 2	2000-08-08
Formation of junctions by diffusion from a doped film into and through a silicide during silicidation Grant 6,096,599 - Kepler , et al. August 1, 2	2000-08-01