Whang; Sung Man

Patent Applications and Registrations

Patent applications and USPTO patent grants for Whang; Sung Man.The latest application filed is for "method of manufacturing semiconductor device having a plurality of channel layers".

Company Profile

6.5.7

Whang; Sung Man - Suwon-si KR
WHANG; Sung Man - Yongin-si KR
Whang; Sung Man - Hwaseong-si KR
Whang; Sung Man - Fishkill NY
Whang; Sung-man - Suwon KR
Whang, Sung-man - Suwon-city KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of manufacturing semiconductor device having a plurality of channel layers Grant 11,437,377 - Shin , et al. September 6, 2	2022-09-06
Method Of Manufacturing Semiconductor Device Having A Plurality Of Channel Layers App 20210020638 - SHIN; Woo Cheol ; et al.	2021-01-21
Semiconductor Device Including Non-sacrificial Gate Spacers And Method Of Fabricating The Same App 20210013324 - KIM; Jin Bum ; et al.	2021-01-14
Semiconductor device having a plurality of channel layers and method of manufacturing the same Grant 10,833,085 - Shin , et al. November 10, 2	2020-11-10
Semiconductor Device Having A Plurality Of Channel Layers And Method Of Manufacturing The Same App 20200219879 - SHIN; Woo Cheol ; et al.	2020-07-09
Integrated circuit device Grant 10,396,205 - Kim , et al. A	2019-08-27
Semiconductor Device And Method Of Fabricating The Same App 20190198639 - KIM; Jin Bum ; et al.	2019-06-27
Integrated Circuit Device App 20190097054 - KIM; Mun-hyeon ; et al.	2019-03-28
Vertical field effect transistor having an elongated channel Grant 9,905,645 - Kang , et al. February 27, 2	2018-02-27
Vertical Field Effect Transistor App 20170345897 - KANG; Myung Gil ; et al.	2017-11-30
Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions Grant 6,541,328 - Whang , et al. April 1, 2	2003-04-01
Method of fabricating metal oxide semiconductor transistor with lightly doped drain structure App 20020115258 - Whang, Sung-man ; et al.	2002-08-22

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