loadpatents
name:-0.24344491958618
name:-0.01799201965332
name:-0.0004889965057373
Weyers; Markus Patent Filings

Weyers; Markus

Patent Applications and Registrations

Patent applications and USPTO patent grants for Weyers; Markus.The latest application filed is for "processes for producing iii-n single crystals, and iii-n single crystal".

Company Profile
0.14.14
  • Weyers; Markus - Wildau DE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Processes for producing III-N single crystals, and III-N single crystal
Grant 10,584,427 - Grunder , et al.
2020-03-10
Processes For Producing Iii-n Single Crystals, And Iii-n Single Crystal
App 20180237944 - GRUNDER; Marit ;   et al.
2018-08-23
Method for producing III-N single crystals, and III-N single crystal
Grant 9,896,779 - Grunder , et al. February 20, 2
2018-02-20
Photodetector for ultraviolet radiation, having a high sensitivity and a low dark current
Grant 9,431,557 - Knigge , et al. August 30, 2
2016-08-30
P-contact and light-emitting diode for the ultraviolet spectral range
Grant 9,331,246 - Kneissl , et al. May 3, 2
2016-05-03
Method For Producing Iii-n Single Crystals, And Iii-n Single Crystal
App 20150292111 - GRUNDER; Marit ;   et al.
2015-10-15
System for frequency conversion, semiconducting device and method for operating and manufacturing the same
Grant 9,008,145 - Weyers , et al. April 14, 2
2015-04-14
Optical Assembly
App 20150001409 - Fix; Richard ;   et al.
2015-01-01
Diode laser and method for manufacturing a high-efficiency diode laser
Grant 8,846,425 - Brox , et al. September 30, 2
2014-09-30
Two-cavity surface-emitting laser
Grant 8,824,518 - Trankle , et al. September 2, 2
2014-09-02
Photodetector For Ultraviolet Radiation, Having A High Sensitivity And A Low Dark Current
App 20140070272 - Knigge; Andrea ;   et al.
2014-03-13
Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy
Grant 8,591,652 - Hennig , et al. November 26, 2
2013-11-26
System For Frequency Conversion, Semiconducting Device And Method For Operating And Manufacturing The Same
App 20130270518 - WEYERS; Markus ;   et al.
2013-10-17
Diode Laser And Method For Manufacturing A High-efficiency Diode Laser
App 20130128911 - BROX; Olaf ;   et al.
2013-05-23
P-contact And Light-emitting Diode For The Ultraviolet Spectral Range
App 20120146047 - Kneissl; Michael ;   et al.
2012-06-14
Two-cavity Surface-emitting Laser
App 20110228805 - TRANKLE; Gunther ;   et al.
2011-09-22
Light-emitting semiconductor component comprising electroluminescent and photoluminescent layers and associated method of production
Grant 8,003,996 - Weyers , et al. August 23, 2
2011-08-23
Semi-conductor Substrate And Method Of Masking Layer For Producing A Free-standing Semi-conductor Substrate By Means Of Hydride-gas Phase Epitaxy
App 20100096727 - Hennig; Christian ;   et al.
2010-04-22
Semiconductor Component And Associated Production Method
App 20100025712 - Weyers; Markus ;   et al.
2010-02-04
Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN Substrates
App 20080171133 - Richter; Eberhard ;   et al.
2008-07-17
Fabrication method for surface emitting semiconductor device and surface emitting semiconductor device
App 20040144984 - Knigge, Andrea ;   et al.
2004-07-29
Semiconductor devices having group III-V compound layers
Grant 6,734,476 - Moessner , et al. May 11, 2
2004-05-11
Semiconductor devices having group III-V compound layers
App 20030006455 - Moessner, Stefan ;   et al.
2003-01-09

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