loadpatents
name:-0.019160032272339
name:-0.014373064041138
name:-0.00086188316345215
Werber; Dorothea Patent Filings

Werber; Dorothea

Patent Applications and Registrations

Patent applications and USPTO patent grants for Werber; Dorothea.The latest application filed is for "vertical power semiconductor device and manufacturing method".

Company Profile
0.16.18
  • Werber; Dorothea - Muenchen DE
  • Werber; Dorothea - Munich DE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Vertical Power Semiconductor Device And Manufacturing Method
App 20210359117 - Pfirsch; Frank Dieter ;   et al.
2021-11-18
Reverse-conducting IGBT
Grant 9,711,626 - Pfirsch , et al. July 18, 2
2017-07-18
Method of operating a reverse conducting IGBT
Grant 9,571,087 - Pfirsch , et al. February 14, 2
2017-02-14
Method of Operating a Reverse Conducting IGBT
App 20160226477 - Pfirsch; Frank ;   et al.
2016-08-04
Semiconductor device with charge carrier lifetime reduction means
Grant 9,362,349 - Werber , et al. June 7, 2
2016-06-07
Semiconductor devices
Grant 9,337,185 - Pfirsch , et al. May 10, 2
2016-05-10
Electronic circuit with a reverse-conducting IGBT and gate driver circuit
Grant 9,337,827 - Werber May 10, 2
2016-05-10
Semiconductor device
Grant 9,337,270 - Pfirsch , et al. May 10, 2
2016-05-10
Reverse-Conducting IGBT
App 20160035867 - Pfirsch; Frank Dieter ;   et al.
2016-02-04
IGBT with emitter electrode electrically connected with impurity zone
Grant 9,240,450 - Werber , et al. January 19, 2
2016-01-19
Method of operating a reverse conducting IGBT
Grant 9,231,581 - Pfirsch , et al. January 5, 2
2016-01-05
Reverse conducting IGBT
Grant 9,214,521 - Werber , et al. December 15, 2
2015-12-15
IGBT with emitter electrode electrically connected with an impurity zone
Grant 9,209,109 - Werber , et al. December 8, 2
2015-12-08
Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode
Grant 9,159,819 - Pfirsch , et al. October 13, 2
2015-10-13
Semiconductor Device and RC-IGBT with Zones Directly Adjoining a Rear Side Electrode
App 20150236143 - Pfirsch; Frank ;   et al.
2015-08-20
Semiconductor Device, Method for Manufacturing the Same and IGBT with Emitter Electrode Electrically Connected with Impurity Zone
App 20150228723 - Werber; Dorothea ;   et al.
2015-08-13
Semiconductor Device
App 20150179636 - Pfirsch; Frank Dieter ;   et al.
2015-06-25
Semiconductor Devices
App 20150179637 - Pfirsch; Frank ;   et al.
2015-06-25
Reverse conducting insulated gate bipolar transistor
Grant 9,018,674 - Werber , et al. April 28, 2
2015-04-28
Method of Operating a Reverse Conducting IGBT
App 20150109050 - Pfirsch; Frank ;   et al.
2015-04-23
Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver Circuit
App 20150015309 - Werber; Dorothea
2015-01-15
IGBT with Emitter Electrode Electrically Connected with an Impurity Zone
App 20150014743 - Werber; Dorothea ;   et al.
2015-01-15
Semiconductor Device with Charge Carrier Lifetime Reduction Means
App 20140015007 - Werber; Dorothea ;   et al.
2014-01-16
Reverse Conducting IGBT
App 20130341674 - Werber; Dorothea ;   et al.
2013-12-26
Reverse Conducting IGBT
App 20130341673 - Pfirsch; Frank ;   et al.
2013-12-26
Reverse Conducting Insulated Gate Bipolar Transistor
App 20130264607 - Werber; Dorothea ;   et al.
2013-10-10
Semiconductor component with improved softness
Grant 8,466,491 - Werber June 18, 2
2013-06-18
Semiconductor Component With Improved Softness
App 20120286323 - Werber; Dorothea
2012-11-15

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