Weng; Wen-Yin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Weng; Wen-Yin.The latest application filed is for "method of forming fin shape structure".

Company Profile

1.5.6

Weng; Wen-Yin - Taichung TW
Weng; Wen-Yin - Taichung City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of forming fin shape structure having different buffer layers Grant 10,312,235 - Weng , et al.	2019-06-04
Method Of Forming Fin Shape Structure App 20180166444 - Weng; Wen-Yin ; et al.	2018-06-14
Fin shape structure Grant 9,929,154 - Weng , et al. March 27, 2	2018-03-27
Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation Grant 9,793,296 - Weng , et al. October 17, 2	2017-10-17
Method For Fabricating Substrate Of Semiconductor Device Including Epitaxial Layer And Silicon Layer Having Same Crystalline Orientation App 20170040346 - Weng; Wen-Yin ; et al.	2017-02-09
Substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation Grant 9,508,799 - Weng , et al. November 29, 2	2016-11-29
Fin Shape Structure App 20160141288 - Weng; Wen-Yin ; et al.	2016-05-19
PFET and CMOS containing same Grant 9,299,839 - Weng , et al. March 29, 2	2016-03-29
Substrate Of Semiconductor Device Including Epitaxal Layer And Silicon Layer Having Same Crstalline Orientation App 20160064485 - Weng; Wen-Yin ; et al.	2016-03-03
Pfet And Cmos Containing Same App 20160064563 - WENG; WEN-YIN ; et al.	2016-03-03
Method of characterizing a device App 20160003888 - Weng; Wen-Yin ; et al.	2016-01-07

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