Weng; Limin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Weng; Limin.The latest application filed is for "tvs structures for high surge and low capacitance".

Company Profile

0.16.14

Weng; Limin - Sunnyvale CA US
Weng; Limin - Shanghai CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
TVS structures for high surge and low capacitance Grant 10,096,588 - Bobde , et al. October 9, 2	2018-10-09
Tvs Structures For High Surge And Low Capacitance App 20180026025 - BOBDE; MADHUR ; et al.	2018-01-25
TVS structures for high surge and low capacitance Grant 9,793,254 - Bobde , et al. October 17, 2	2017-10-17
TVS Structures for High Surge AND Low Capacitance App 20170141097 - Bobde; Madhur ; et al.	2017-05-18
Shielded gate trench MOS with improved source pickup layout Grant 9,252,265 - Chang , et al. February 2, 2	2016-02-02
Shielded Gate Trench Mos With Improved Source Pickup Layout App 20150194522 - Chang; Hong ; et al.	2015-07-09
Shielded gate trench MOS with improved source pickup layout Grant 8,994,101 - Chang , et al. March 31, 2	2015-03-31
TVS with low capacitance and forward voltage drop with depleted SCR as steering diode Grant 8,835,977 - Bobde , et al. September 16, 2	2014-09-16
Tvs With Low Capacitance & Forward Voltage Drop With Depleted Scr As Steering Diode App 20140167101 - Bobde; Madhur ; et al.	2014-06-19
Multiple layer barrier metal for device component formed in contact trench Grant 8,580,676 - Chang , et al. November 12, 2	2013-11-12
Shielded Gate Trench Mos With Improved Source Pickup Layout App 20130228860 - Chang; Hong ; et al.	2013-09-05
Method for fabricating a shielded gate trench MOS with improved source pickup layout Grant 8,431,457 - Chang , et al. April 30, 2	2013-04-30
TVS with low capacitance and forward voltage drop with depleted SCR as steering diode Grant 8,338,854 - Bobde , et al. December 25, 2	2012-12-25
Multiple Layer Barrier Metal For Device Component Formed In Contact Trench App 20120129328 - Chang; Hong ; et al.	2012-05-24
Multiple layer barrier metal for device component formed in contact trench Grant 8,138,605 - Chang , et al. March 20, 2	2012-03-20
Shielded Gate Trench Mos With Improved Source Pickup Layout App 20110220990 - Chang; Hong ; et al.	2011-09-15
Multiple Layer Barrier Metal For Device Component Formed In Contact Trench App 20110095361 - Chang; Hong ; et al.	2011-04-28
Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS Grant 7,863,995 - Ho , et al. January 4, 2	2011-01-04
TVS with low capacitance & Forward voltage drop with depleted SCR as steering diode App 20100244090 - Bobde; Madhur ; et al.	2010-09-30
Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS App 20080310065 - Ho; Moses ; et al.	2008-12-18

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