| Patent | Date |
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Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structure
Grant 11,158,508 - Wen , et al. October 26, 2 | 2021-10-26 |
Method of semiconductor device fabrication
Grant 11,037,787 - Wen , et al. June 15, 2 | 2021-06-15 |
Replacement Gate Process for FinFET
App 20210082919 - Chiang; Hung-Li ; et al. | 2021-03-18 |
FinFET transistor with fin back biasing
Grant 10,868,006 - Wen , et al. December 15, 2 | 2020-12-15 |
Replacement gate process for FinFET
Grant 10,854,605 - Chiang , et al. December 1, 2 | 2020-12-01 |
FinFET Transistor with Fin Back Biasing
App 20200144257 - Wen; Tsung-Yao ; et al. | 2020-05-07 |
Method of Semiconductor Device Fabrication
App 20200043735 - Wen; Tsung-Yao ; et al. | 2020-02-06 |
Replacement Gate Process for FinFET
App 20200013779 - Chiang; Hung-Li ; et al. | 2020-01-09 |
FinFET transistor with fin back biasing
Grant 10,522,540 - Wen , et al. Dec | 2019-12-31 |
Method of semiconductor device fabrication
Grant 10,446,396 - Wen , et al. Oc | 2019-10-15 |
Replacement gate process for FinFET
Grant 10,418,363 - Chiang , et al. Sept | 2019-09-17 |
Method of Semiconductor Device Fabrication
App 20190252189 - Wen; Tsung-Yao ; et al. | 2019-08-15 |
Method of semiconductor device fabrication
Grant 10,276,380 - Wen , et al. | 2019-04-30 |
FinFET Transistor with Fin Back Biasing
App 20190115345 - Wen; Tsung-Yao ; et al. | 2019-04-18 |
Replacement Gate Process for FinFET
App 20190109134 - Chiang; Hung-Li ; et al. | 2019-04-11 |
Layout modification method and system
Grant 10,169,515 - Sio , et al. J | 2019-01-01 |
FinFET transistor with fin back biasing
Grant 10,163,902 - Wen , et al. Dec | 2018-12-25 |
Replacement gate process for FinFET
Grant 10,153,280 - Chiang , et al. Dec | 2018-12-11 |
Semiconductor device with epitaxial source/drain
Grant 10,062,688 - Yeong , et al. August 28, 2 | 2018-08-28 |
Barrier Layer Above Anti-punch Through (apt) Implant Region To Improve Mobility Of Channel Region Of Fin Field Effect Transistor (finfet) Device Structure
App 20180204726 - WEN; Tsung-Yao ; et al. | 2018-07-19 |
FinFET Transistor with Fin Back Biasing
App 20180197857 - Wen; Tsung-Yao ; et al. | 2018-07-12 |
Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure
Grant 9,953,836 - Wen , et al. April 24, 2 | 2018-04-24 |
Semiconductor device having electrode and manufacturing method thereof
Grant 9,941,372 - Wang , et al. April 10, 2 | 2018-04-10 |
Methods for forming fin structures for semiconductor devices
Grant 9,934,961 - Wang , et al. April 3, 2 | 2018-04-03 |
FinFET transistor with fin back biasing
Grant 9,917,086 - Wen , et al. March 13, 2 | 2018-03-13 |
FinFET transistor with u-shaped channel
Grant 9,893,191 - Wen , et al. February 13, 2 | 2018-02-13 |
Structure of fin feature and method of making same
Grant 9,847,329 - Wen , et al. December 19, 2 | 2017-12-19 |
Semiconductor Device With Epitaxial Source/drain
App 20170194321 - YEONG; Sai-Hooi ; et al. | 2017-07-06 |
Layout Modification Method And System
App 20170140086 - SIO; KAM-TOU ; et al. | 2017-05-18 |
Replacement Gate Process for FinFET
App 20170133487 - Chiang; Hung-Li ; et al. | 2017-05-11 |
FinFET formation process and structure
Grant 9,601,377 - Wen , et al. March 21, 2 | 2017-03-21 |
Method of forming semiconductor structure with anti-punch through structure
Grant 9,595,442 - Wen , et al. March 14, 2 | 2017-03-14 |
FinFET Transistor With Fin Back Biasing
App 20170069629 - Wen; Tsung-Yao ; et al. | 2017-03-09 |
Structures and Methods for Forming Fin Structures
App 20170047222 - WANG; SHENG-CHEN ; et al. | 2017-02-16 |
Replacement gate process for FinFET
Grant 9,570,580 - Chiang , et al. February 14, 2 | 2017-02-14 |
FinFET transistor with fin back biasing
Grant 9,502,542 - Wen , et al. November 22, 2 | 2016-11-22 |
Structures and methods for forming fin structures
Grant 9,484,244 - Wang , et al. November 1, 2 | 2016-11-01 |
Semiconductor structure with fin structure and wire structure and method for forming the same
Grant 9,450,046 - Wen , et al. September 20, 2 | 2016-09-20 |
Semiconductor Device Having Electrode and Manufacturing Method Thereof
App 20160254360 - Wang; Pai-Chieh ; et al. | 2016-09-01 |
Fin Field Effect Transistor (finfet) Device Structure With Ge-doped Inter-layer Dielectric (ild) Structure
App 20160254385 - WEN; Tsung-Yao ; et al. | 2016-09-01 |
Fin field effect transistor (FinFET) device structure with Ge-doped inter-layer dielectric (ILD) structure
Grant 9,425,317 - Wen , et al. August 23, 2 | 2016-08-23 |
Method Of Forming Semiconductor Structure With Anti-punch Through Structure
App 20160218007 - WEN; Tsung-Yao ; et al. | 2016-07-28 |
Barrier Layer Above Anti-punch Through (apt) Implant Region To Improve Mobility Of Channel Region Of Fin Field Effect Transistor (finfet) Device Structure
App 20160218104 - WEN; Tsung-Yao ; et al. | 2016-07-28 |
Semiconductor Structure With Fin Structure And Wire Structure And Method For Forming The Same
App 20160204195 - WEN; Tsung-Yao ; et al. | 2016-07-14 |
Finfet Transistor With Fin Back Biasing
App 20160181404 - Wen; Tsung-Yao ; et al. | 2016-06-23 |
Semiconductor device having electrode and manufacturing method thereof
Grant 9,337,293 - Wang , et al. May 10, 2 | 2016-05-10 |
Finfet Formation Process And Structure
App 20160111334 - Wen; Tsung-Yao ; et al. | 2016-04-21 |
Method of Semiconductor Device Fabrication
App 20160111286 - Wen; Tsung-Yao ; et al. | 2016-04-21 |
Structure of Fin Feature and Method of Making Same
App 20160071846 - Wen; Tsung-Yao ; et al. | 2016-03-10 |
Method of forming semiconductor structure with anti-punch through structure
Grant 9,275,905 - Wen , et al. March 1, 2 | 2016-03-01 |
FinFET Transistor with U-Shaped Channel
App 20160056295 - Wen; Tsung-Yao ; et al. | 2016-02-25 |
Structures And Methods For Forming Fin Structures
App 20150294897 - WANG; SHENG-CHEN ; et al. | 2015-10-15 |
Semiconductor Device Having Electrode and Manufacturing Method Thereof
App 20140239417 - Wang; Pai-Chieh ; et al. | 2014-08-28 |
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