Wen; Huang-Chun

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wen; Huang-Chun.The latest application filed is for "low-temperature passivation of ferroelectric integrated circuits for enhanced polarization performance".

Company Profile

0.6.9

Wen; Huang-Chun - Dallas TX
Wen; Huang-Chun - Plano TX US
Wen, Huang-Chun - Tainan City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance App 20180374861 - Wen; Huang-Chun ; et al.	2018-12-27
Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance App 20160086960 - Wen; Huang-Chun ; et al.	2016-03-24
Integrated circuit with integrated decoupling capacitors Grant 9,070,575 - Summerfelt , et al. June 30, 2	2015-06-30
Integrated circuit with integrated decoupling capacitors Grant 8,753,952 - Summerfelt , et al. June 17, 2	2014-06-17
Integrated Circuit With Integrated Decoupling Capacitors App 20130313679 - Summerfelt; Scott Robert ; et al.	2013-11-28
Engineered oxygen profile in metal gate electrode and nitrided high-K gate dielectrics structure for high performance PMOS devices Grant 8,482,080 - Niimi , et al. July 9, 2	2013-07-09
Integrated Circuit with Integrated Decoupling Capacitors App 20130062733 - Summerfelt; Scott Robert ; et al.	2013-03-14
Engineered Oxygen Profile In Metal Gate Electrode And Nitrided High-k Gate Dielectrics Structure For High Performance Pmos Devices App 20120228715 - NIIMI; Hiroaki ; et al.	2012-09-13
Engineered oxygen profile in metal gate electrode and nitrided high-k gate dielectrics structure for high performance PMOS devices Grant 8,202,773 - Niimi , et al. June 19, 2	2012-06-19
Engineered Oxygen Profile In Metal Gate Electrode And Nitrided High-k Gate Dielectrics Structure For High Performance Pmos Devices App 20100052071 - NIIMI; Hiroaki ; et al.	2010-03-04
Mosfet With Metal Gate Electrode App 20090039441 - Luna; Hongfa ; et al.	2009-02-12
Ultra-shallow junction formation for nano MOS devices using amorphous-si capping layer App 20040147070 - Lei, Tan Fu ; et al.	2004-07-29

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