Weitzel; Charles E.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Weitzel; Charles E..The latest application filed is for "phemt with barrier optimized for low temperature operation".
- Weitzel; Charles E. - Mesa AZ
- Weitzel; Charles E. - Tempe AZ
- Weitzel; Charles E. - Plainsboro NJ
- Weitzel; Charles E. - Scottsdale AZ
- Weitzel; Charles E. - Princeton NJ
| Patent | Date |
|---|---|
| pHEMT with barrier optimized for low temperature operation Grant 7,253,455 - Green , et al. August 7, 2 | 2007-08-07 |
| Recessed semiconductor device Grant 7,229,903 - Li , et al. June 12, 2 | 2007-06-12 |
| pHEMT with barrier optimized for low temperature operation App 20060220062 - Green; Bruce M. ; et al. | 2006-10-05 |
| Recessed semiconductor device App 20060043416 - P. Li; Hsin-Hua ; et al. | 2006-03-02 |
| Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plate Grant 6,939,781 - Redd , et al. September 6, 2 | 2005-09-06 |
| InGaP pHEMT device for power amplifier operation over wide temperature range App 20050104087 - Lan, Ellen Y. ; et al. | 2005-05-19 |
| Advanced RF enhancement-mode FETs with improved gate properties Grant 6,893,947 - Martinez , et al. May 17, 2 | 2005-05-17 |
| Method for forming a microwave field effect transistor with high operating voltage Grant 6,867,078 - Green , et al. March 15, 2 | 2005-03-15 |
| Semiconductor component and method of manufacturing same App 20040262629 - Redd, Randy D. ; et al. | 2004-12-30 |
| Advanced RF enhancement-mode FETs with improved gate properties App 20030235974 - Martinez, Marino J. ; et al. | 2003-12-25 |
| 3-D smart power IC App 20020024090 - Weitzel, Charles E. ; et al. | 2002-02-28 |
| High breakdown voltage resurf HFET Grant 6,100,549 - Weitzel , et al. August 8, 2 | 2000-08-08 |
| Method of fabricating vertical FET with Schottky diode Grant 5,956,578 - Weitzel , et al. September 21, 1 | 1999-09-21 |
| Method of fabricating a semiconductor device with a thinned substrate Grant 5,933,750 - Wilson , et al. August 3, 1 | 1999-08-03 |
| Insulated gate bipolar transistor with reduced electric fields Grant 5,917,204 - Bhatnagar , et al. June 29, 1 | 1999-06-29 |
| Lateral gate vertical drift region transistor Grant 5,917,203 - Bhatnagar , et al. June 29, 1 | 1999-06-29 |
| Silicon carbide transistor and method Grant 5,885,860 - Weitzel , et al. March 23, 1 | 1999-03-23 |
| Lateral gate, vertical drift region transistor Grant 5,877,047 - Weitzel , et al. March 2, 1 | 1999-03-02 |
| Method for planarizing wide bandgap semiconductor devices Grant 5,796,122 - Weitzel , et al. August 18, 1 | 1998-08-18 |
| Lateral gate, vertical drift region transistor Grant 5,780,878 - Bhatnagar , et al. July 14, 1 | 1998-07-14 |
| Lateral MOSFET with modified field plates and damage areas Grant 5,710,455 - Bhatnagar , et al. January 20, 1 | 1998-01-20 |
| Silicon carbide MOSFET Grant 5,661,312 - Weitzel , et al. August 26, 1 | 1997-08-26 |
| Method of forming a silicon carbide JFET Grant 5,641,695 - Moore , et al. June 24, 1 | 1997-06-24 |
| Silicon carbide LOCOS vertical MOSFET device Grant 5,635,732 - Davis , et al. June 3, 1 | 1997-06-03 |
| High breakdown voltage silicon carbide transistor Grant 5,569,937 - Bhatnagar , et al. October 29, 1 | 1996-10-29 |
| Method of fabricating a silicon carbide vertical MOSFET and device Grant 5,451,797 - Davis , et al. September 19, 1 | 1995-09-19 |
| Modulation doped field effect transistor Grant 5,399,887 - Weitzel , et al. March 21, 1 | 1995-03-21 |
| Method of fabricating a silicon carbide vertical MOSFET Grant 5,397,717 - Davis , et al. March 14, 1 | 1995-03-14 |
| Monolithic microwave integrated circuit having vertically stacked components Grant 4,969,032 - Scheitlin , et al. November 6, 1 | 1990-11-06 |
| Use of silicide to bridge unwanted polycrystalline silicon P-N junction Grant 4,333,099 - Tanguay , et al. June 1, 1 | 1982-06-01 |
| Insulated gate field effect silicon-on-sapphire transistor and method of making same Grant 4,199,773 - Goodman , et al. April 22, 1 | 1980-04-22 |
| Planar semiconductor devices and method of making the same Grant 4,160,260 - Weitzel , et al. July 3, 1 | 1979-07-03 |
| Method of making silicon on sapphire field effect transistors with specifically aligned gates Grant 4,131,496 - Weitzel , et al. December 26, 1 | 1978-12-26 |
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