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Patent applications and USPTO patent grants for Wei; David T..The latest application filed is for "using a polaron interaction zone as an interface to integrate a plasmon layer and a semiconductor detector".
Patent | Date |
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Using a polaron interaction zone as an interface to integrate a plasmon layer and a semiconductor detector Grant 7,495,230 - Wei , et al. February 24, 2 | 2009-02-24 |
Utilizing an integrated plasmon detector to measure a metal deposit roughness on a semiconductor surface Grant 7,297,966 - Wei , et al. November 20, 2 | 2007-11-20 |
Using a polaron interaction zone as an interface to integrate a plasmon layer and a semiconductor detector App 20060170926 - Wei; David T. ;   et al. | 2006-08-03 |
Utilizing an integrated plasmon detector to measure a metal deposit roughness on a semiconductor surface App 20060050280 - Wei; David T. ;   et al. | 2006-03-09 |
Method and apparatus for ion beam sputter deposition of thin films Grant 6,190,511 - Wei February 20, 2 | 2001-02-20 |
Method for fabricating multi-layer optical films Grant RE32,849 - Wei , et al. January 31, 1 | 1989-01-31 |
Method for fabricating multi-layer optical films Grant 4,142,958 - Wei , et al. March 6, 1 | 1979-03-06 |
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