| Patent | Date |
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Method for making superlattice structures with reduced defect densities
Grant 11,430,869 - Weeks , et al. August 30, 2 | 2022-08-30 |
Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers
Grant 11,302,823 - Weeks , et al. April 12, 2 | 2022-04-12 |
Method For Making Semiconductor Device Including Superlattice With Oxygen And Carbon Monolayers
App 20220005927 - WEEKS; KEITH DORAN ; et al. | 2022-01-06 |
Method For Making A Semiconductor Device Using Superlattices With Different Non-semiconductor Thermal Stabilities
App 20220005706 - WEEKS; KEITH DORAN ; et al. | 2022-01-06 |
Semiconductor Device Including Superlattice With Oxygen And Carbon Monolayers
App 20220005926 - WEEKS; KEITH DORAN ; et al. | 2022-01-06 |
Semiconductor device including a superlattice with different non-semiconductor material monolayers
Grant 11,177,351 - Weeks , et al. November 16, 2 | 2021-11-16 |
Semiconductor Device Including A Superlattice With Different Non-semiconductor Material Monolayers
App 20210265465 - WEEKS; KEITH DORAN ; et al. | 2021-08-26 |
Method For Making Semiconductor Device Including A Superlattice With Different Non-semiconductor Material Monolayers
App 20210265509 - Weeks; Keith Doran ; et al. | 2021-08-26 |
Method for making a semiconductor device including a superlattice within a recessed etch
Grant 11,075,078 - Cody , et al. July 27, 2 | 2021-07-27 |
Method For Making Superlattice Structures With Reduced Defect Densities
App 20200411645 - WEEKS; KEITH DORAN ; et al. | 2020-12-31 |
Method for making superlattice structures with reduced defect densities
Grant 10,811,498 - Weeks , et al. October 20, 2 | 2020-10-20 |
Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
Grant 10,727,049 - Weeks , et al. | 2020-07-28 |
Method For Making A Semiconductor Device Including A Superlattice Having Nitrogen Diffused Therein
App 20200135489 - WEEKS; KEITH DORAN ; et al. | 2020-04-30 |
Semiconductor Device Including Superlattice Structures With Reduced Defect Densities
App 20200075327 - WEEKS; Keith Doran ; et al. | 2020-03-05 |
Method For Making Superlattice Structures With Reduced Defect Densities
App 20200075731 - WEEKS; KEITH DORAN ; et al. | 2020-03-05 |
Semiconductor device including superlattice structures with reduced defect densities
Grant 10,566,191 - Weeks , et al. Feb | 2020-02-18 |
Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
Grant 10,468,245 - Weeks , et al. No | 2019-11-05 |
Semiconductor Device Including Compound Semiconductor Materials And An Impurity And Point Defect Blocking Superlattice
App 20190279868 - Weeks; Keith Doran ; et al. | 2019-09-12 |
Method For Making A Semiconductor Device Including Compound Semiconductor Materials And An Impurity And Point Defect Blocking Su
App 20190279869 - WEEKS; KEITH DORAN ; et al. | 2019-09-12 |
Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
Grant 10,109,479 - Mears , et al. October 23, 2 | 2018-10-23 |
Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
Grant 9,490,325 - Weeks November 8, 2 | 2016-11-08 |
Structures And Devices Including A Tensile-stressed Silicon Arsenic Layer And Methods Of Forming Same
App 20160181368 - Weeks; Keith Doran | 2016-06-23 |
Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
Grant 9,324,811 - Weeks April 26, 2 | 2016-04-26 |
Selective epitaxial formation of semiconductive films
Grant 9,312,131 - Bauer , et al. April 12, 2 | 2016-04-12 |
Doped semiconductor films and processing
Grant 9,099,423 - Weeks , et al. August 4, 2 | 2015-08-04 |
Doped Semiconductor Films And Processing
App 20150014816 - Weeks; Keith Doran ; et al. | 2015-01-15 |
Structures And Devices Including A Tensile-stressed Silicon Arsenic Layer And Methods Of Forming Same
App 20140084341 - Weeks; Keith Doran | 2014-03-27 |
Selective epitaxial formation of semiconductor films
Grant 8,278,176 - Bauer , et al. October 2, 2 | 2012-10-02 |
Selective Epitaxial Formation Of Semiconductive Films
App 20120244688 - Bauer; Matthias ; et al. | 2012-09-27 |
Heteroepitaxial deposition over an oxidized surface
Grant 7,901,968 - Weeks , et al. March 8, 2 | 2011-03-08 |
Selective deposition of silicon-containing films
Grant 7,816,236 - Bauer , et al. October 19, 2 | 2010-10-19 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Grant 7,648,690 - Bauer , et al. January 19, 2 | 2010-01-19 |
Methods Of Making Substitutionally Carbon-doped Crystalline Si-containing Materials By Chemical Vapor Deposition
App 20090026496 - Bauer; Matthias ; et al. | 2009-01-29 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Grant 7,438,760 - Bauer , et al. October 21, 2 | 2008-10-21 |
Selective Epitaxial Formation Of Semiconductor Films
App 20070287272 - Bauer; Matthias ; et al. | 2007-12-13 |
Relaxed heteroepitaxial layers
App 20070224787 - Weeks; Keith Doran ; et al. | 2007-09-27 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
App 20060240630 - Bauer; Matthias ; et al. | 2006-10-26 |
Selective deposition of silicon-containing films
App 20060234504 - Bauer; Matthias ; et al. | 2006-10-19 |
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